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CY62148E Abstract: CY62148ELL-45ZSXI CY62148B CY62148ELL CY62148ELL-55SXA CY62148ELL-55SXI CY62148e CY62148b Contextual Info: CY62148E MoBL 4-Mbit 512K x 8 Static RAM Functional Description [1] Features • Very high speed: 45 ns The CY62148E is a high performance CMOS static RAM organized as 512K words by 8 bits. This device features advanced circuit design to provide ultra low active current.	Original	CY62148E CY62148ELL-45ZSXI CY62148B CY62148ELL CY62148ELL-55SXA CY62148ELL-55SXI CY62148e CY62148b	PDF
CY62148E Abstract: CY62148ELL-55SXE CY62148e CY62148b Contextual Info: CY62148E MoBL 4-Mbit 512K x 8 Static RAM Functional Description[1] Features • Very high speed: 45 ns The CY62148E is a high-performance CMOS static RAM organized as 512K words by 8 bits. This device features advanced circuit design to provide ultra-low active current.	Original	CY62148E CY62148B 32-pin CY62148ELL-55SXE CY62148e CY62148b	PDF
CY62148E Contextual Info: CY62148E MoBL 4-Mbit 512K x 8 Static RAM Functional Description[1] Features • Very high speed The CY62148E is a high-performance CMOS static RAM organized as 512K words by 8 bits. This device features advanced circuit design to provide ultra-low active current.	Original	CY62148E CY62148B 32-pin	PDF
CY62148E Contextual Info: CY62148E MoBL 4-Mbit 512K x 8 Static RAM Functional Description[1] Features • Very high speed: 45 ns The CY62148E is a high-performance CMOS static RAMs organized as 512K words by 8 bits. This device features advanced circuit design to provide ultra-low active current.	Original	CY62148E CY62148B 32-pin	PDF
CY62148E Abstract: CY62148B CY62148ELL CY62148ELL-45ZSXI CY62148ELL-55SXI 330281 Contextual Info: CY62148E MoBL 4-Mbit 512 K x 8 Static RAM Features Functional Description • Very high speed: 45 ns The CY62148E is a high performance CMOS static RAM organized as 512 K words by 8-bits. This device features advanced circuit design to provide ultra low active current. This	Original	CY62148E CY62148B CY62148ELL CY62148ELL-45ZSXI CY62148ELL-55SXI 330281	PDF
CY62148E Contextual Info: CY62148E MoBL 4-Mbit 512K x 8 Static RAM Functional Description [1] Features • • • • Very high speed: 45 ns Voltage range: 4.5V–5.5V Pin compatible with CY62148B Ultra low standby power The CY62148E is a high performance CMOS static RAM organized as 512K words by 8 bits. This device features	Original	CY62148E CY62148B	PDF
CY62148E Abstract: CY62148ELL-55SXI Contextual Info: CY62148E MoBL 4-Mbit 512K x 8 Static RAM Functional Description [1] Features • Very high speed: 45 ns The CY62148E is a high performance CMOS static RAM organized as 512K words by 8 bits. This device features advanced circuit design to provide ultra low active current.	Original	CY62148E CY62148B 32-pin CY62148ELL-55SXI	PDF
CY62148E Abstract: CY62148B CY62148ELL CY62148ELL-45ZSXI CY62148ELL-55SXI 249276 Contextual Info: CY62148E MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns The CY62148E is a high performance CMOS static RAM organized as 512 K words by 8-bits. This device features advanced circuit design to provide ultra low active current. This	Original	CY62148E CY62148B CY62148ELL CY62148ELL-45ZSXI CY62148ELL-55SXI 249276	PDF
CY62148E Abstract: CY62148e CY62148b Contextual Info: CY62148E MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns The CY62148E is a high performance CMOS static RAM organized as 512 K words by 8-bits. This device features advanced circuit design to provide ultra low active current. This	Original	CY62148E CY62148e CY62148b	PDF
CY62148E Contextual Info: CY62148E MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features advanced circuit design to provide ultra low standby current. This is ideal for providing More Battery Life (MoBL) in portable applications. The device also has an automatic power-down	Original	CY62148E CY62148B 32-pin	PDF
CY62148E Abstract: cy62148ell-45z CY62148ELL-55SXI Contextual Info: CY62148E MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ■ Voltage range: 4.5 V to 5.5 V ■ Pin compatible with CY62148B ■ Ultra low standby power ❐ Typical standby current: 1 µA	Original	CY62148E cy62148ell-45z CY62148ELL-55SXI	PDF
CY62148E Abstract: CY62148B CY62148DV30 CY62148ELL CY62148ELL-55SXA CY62148ELL-55SXI CY62148EV30 CY62148EV30LL CY62148EV30LL-55SXI AN13470 Contextual Info: Clarification on VIL Spec for 90 nm 4M MoBL SRAMs SOIC Packages AN13470 Author: Anuj Chakrapani Associated Project: No Associated Part Family: CY62148E / CY62148EV30 Software Version: None Associated Application Notes: None Abstract AN13470 discusses the VIL input low voltage specification for the 90 nm 4M CY62148ELL-55SXI, CY62148ELL-55SXA and	Original	AN13470 CY62148E CY62148EV30 AN13470 CY62148ELL-55SXI, CY62148ELL-55SXA CY62148EV30LL-55SXI CY62148ELL-55SXA CY62148B CY62148DV30 CY62148ELL CY62148ELL-55SXI CY62148EV30 CY62148EV30LL	PDF
CY62148E Contextual Info: CY62148E MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features advanced circuit design to provide ultra low standby current. This is ideal for providing More Battery Life (MoBL) in portable applications. The device also has an automatic power-down	Original	CY62148E	PDF
TC554161A Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000 Contextual Info: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA	Original	BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC554161A HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000	PDF