CY62157 Search Results

Contextual Info: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM 8-bit (512K x 16) Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A

CY62157EV30LL-45BVXI

Abstract: TSOP 48 thermal resistance
Contextual Info: CY62157EV30 MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features Functional Description • Thin small outline package (TSOP) I package configurable as 512 K × 16 or 1 M × 8 static RAM (SRAM) ■ High speed: 45 ns ■ Temperature ranges

CY62157CV25

Abstract: CY62157CV30 CY62157CV33 CY62157DV30 CY62157DV30L CY62157DV30LL
Contextual Info: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL® Static RAM Functional Description[1] Features • Temperature Ranges The CY62157DV30 is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra-low active current.

CY62157CV18

Contextual Info: CY62157CV18 MoBL2 512K x 16 Static RAM Features The device can also be put into standby mode when deselected CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH . The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE1 HIGH or CE2

CY62157ELL-45ZSXI

Contextual Info: CY62157E MoBL 8-Mbit 512K x 16 Static RAM Features portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption when addresses are not toggling. The device can also be put into standby mode when

Contextual Info: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM 8-bit (512K x 16) Static RAM Features consumption when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output

Contextual Info: CY62157EV30 MoBL 8-Mbit 512K x 16 Static RAM Features • TSOP I package configurable as 512K x 16 or as 1M x 8 SRAM • High speed: 45 ns reduces power consumption when addresses are not toggling. Place the device into standby mode when deselected (CE1

CY62157CV18

Abstract: CY62157DV20
Contextual Info: PRELIMINARY CY62157DV20 MoBL2 512K x 16 Static RAM Features reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH . The input/output pins (I/O0 through I/O15) are placed

CY62157CV25

Abstract: CY62157CV30 CY62157CV33 CY62157DV30 cy62157dv30l-55zxi
Contextual Info: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL Static RAM Features portable applications such as cellular telephones.The device also has an automatic power-down feature that significantly reduces power consumption. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or

AN1064

Abstract: CY62157DV30 CY62157EV30
Contextual Info: CY62157EV30 MoBL 8 Mbit 512K x 16 Static RAM Features Functional Description • Thin small outline package (TSOP) I package configurable as 512K x 16 or 1M x 8 static RAM (SRAM) ■ High speed: 45 ns ■ Temperature ranges ❐ Industrial: –40°C to +85°C

Contextual Info: 47V CY62157CV25/30/33 ADVANCE INFORMATION MoBL 512K x 16 Static RAM Features BHE are HIGH. The input/output pins I/O0 through I/O15 are placed in a high-impedance state when: deselected (CE1 HIGH or CE2 LOW), outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write

Contextual Info: CY62157DV MoBL PRELIMINARY 8 Mb 512K x 16 Static RAM Features portable applications such as cellular telephones.The device also has an automatic power-down feature that significantly reduces power consumption. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or

Contextual Info: CY62157ESL MoBL 8-Mbit 512K x 16 Static RAM Features • Very high speed: 45 ns ■ Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical Standby current: 2 A ❐ Maximum Standby current: 8 A ■ Ultra low active power

CY62157CV25

Abstract: CY62157CV30 CY62157CV33
Contextual Info: CY62157CV25/30/33 MoBL 512K x 16 Static RAM Features reducing power consumption by more than 99% when deselected CE1 HIGH or CE2 LOW or both BLE and BHE are HIGH . The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE1 HIGH or

Contextual Info: CY62157ESL MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features • Very high speed: 45 ns ■ Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical Standby current: 2 A ❐ Maximum Standby current: 8 A

AN1064

Abstract: CY62157E CY62157ELL
Contextual Info: CY62157E MoBL 8-Mbit 512K x 16 Static RAM Features also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input

CY62157CV18

Contextual Info: CY62157CV18 MoBL2 512K x 16 Static RAM Features The device can also be put into standby mode when deselected CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH . The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE1 HIGH or CE2

Contextual Info: CY62157E MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Place the device

Contextual Info: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM 8-bit (512K x 16) Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A

Contextual Info: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL® Static RAM Functional Description[1] Features • Temperature Ranges The CY62157DV30 is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra-low active current.

Contextual Info: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM Features portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption when addresses are not toggling. The device can also be put into standby mode when

CY62157DV18

Abstract: CY62157DV20 CY62157EV18
Contextual Info: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM Features deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • Very high speed: 55 ns • Wide voltage range: 1.65V–2.25V

AN1064

Abstract: CY62157DV30 CY62157EV30 CY62157EV30LL-55ZXE CY62157EV30Ll-45zxa
Contextual Info: CY62157EV30 MoBL 8 Mbit 512K x 16 Static RAM Features • TSOP I Package Configurable as 512K x 16 or 1M x 8 SRAM ■ High Speed: 45 ns ■ Temperature Ranges ❐ Industrial: –40°C to +85°C ❐ Automotive-A: –40°C to +85°C ❐ Automotive-E: –40°C to +125°C

CY62157CV25

Abstract: CY62157CV30 CY62157CV33
Contextual Info: CY62157CV25/30/33 512K x 16 Static RAM Features MoBL in portable applications such as cellular telephones. The devices also have an automatic power-down feature that significantly reduces power consumption by 80% when addresses are not toggling. The device can also be put into