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    Infineon Technologies AG CY7C106D-10VXI

    IC SRAM 1MBIT PARALLEL 28SOJ
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    CY7C106D Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CY7C106D Cypress Semiconductor 1-Mbit (256K x 4) Static RAM Original PDF
    CY7C106D-10VXI Cypress Semiconductor 1-Mbit (256K x 4) Static RAM Original PDF
    CY7C106D-10VXIT Cypress Semiconductor 1-Mbit (256K x 4) Static RAM; Density: 1 Mb; Organization: 256Kb x 4; Vcc (V): 4.5 to 5.5 V; Original PDF

    CY7C106D Datasheets Context Search

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    CY7C1006D

    Abstract: CY7C106D CY7C106D-10VXI 7C106D
    Text: CY7C106D CY7C1006D 1-Mbit 256K x 4 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C106B/CY7C1006B • High speed — tAA = 10 ns • Low active power — ICC = 80 mA @ 10 ns • Low CMOS standby power — ISB2 = 3.0 mA


    Original
    PDF CY7C106D CY7C1006D CY7C106B/CY7C1006B CY7C106D CY7C1006D 83MHz, 66MHz 40MHz 100MHz, CY7C106D-10VXI 7C106D

    Untitled

    Abstract: No abstract text available
    Text: CY7C106D CY7C1006D 1-Mbit 256K x 4 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C106B/CY7C1006B • High speed — tAA = 10 ns • Low active power — ICC = 80 mA @ 10 ns • Low CMOS standby power — ISB2 = 3.0 mA


    Original
    PDF CY7C106D CY7C1006D CY7C106B/CY7C1006B CY7C106D CY7C1006D

    Untitled

    Abstract: No abstract text available
    Text: CY7C106D CY7C1006D PRELIMINARY 1-Mbit 256K x 4 Static RAM Functional Description[1] Features The CY7C106D and CY7C1006D are high-performance CMOS static RAMs organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state


    Original
    PDF CY7C106D CY7C1006D CY7C106B/CY7C1006B CY7C1006D CY7C106D,

    1709 013

    Abstract: CY7C1006D CY7C106D CY7C106D-10VXI
    Text: CY7C106D CY7C1006D 1-Mbit 256K x 4 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C106B/CY7C1006B • High speed — tAA = 10 ns • Low active power — ICC = 80 mA @ 10 ns • Low CMOS standby power — ISB2 = 3.0 mA


    Original
    PDF CY7C106D CY7C1006D CY7C106B/CY7C1006B CY7C106D CY7C1006D 83MHz, 66MHz 40MHz 100MHz, 1709 013 CY7C106D-10VXI

    Untitled

    Abstract: No abstract text available
    Text: CY7C106D CY7C1006D 1-Mbit 256K x 4 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C106B/CY7C1006B • High speed — tAA = 10 ns • Low active power — ICC = 80 mA @ 10 ns • Low CMOS standby power — ISB2 = 3.0 mA


    Original
    PDF CY7C106D CY7C1006D CY7C106B/CY7C1006B CY7C106D CY7C1006D

    Untitled

    Abstract: No abstract text available
    Text: CY7C106D CY7C1006D 1-Mbit 256K x 4 Static RAM Functional Description[1] Features • Pin- and function-compatible with CY7C106B/CY7C1006B • High speed — tAA = 10 ns • Low active power — ICC = 60 mA @ 10 ns • Low CMOS standby power • • • •


    Original
    PDF CY7C106D CY7C1006D CY7C106B/CY7C1006B 28-pin 400-Mil CY7C1006D 300-Mil

    Untitled

    Abstract: No abstract text available
    Text: CY7C106D CY7C1006D 1-Mbit 256 K x 4 Static RAM 1-Mbit (256 K × 4) Static RAM Features • Pin- and function-compatible with CY7C106B/CY7C1006B ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 80 mA @ 10 ns ■ Low CMOS standby power ❐ ISB2 = 3.0 mA


    Original
    PDF CY7C106D CY7C1006D CY7C106B/CY7C1006B CY7C106D 28-pin 400-Mil CY7C1006D 300-Mil

    Untitled

    Abstract: No abstract text available
    Text: CY7C106D CY7C1006D 1-Mbit 256 K x 4 Static RAM 1-Mbit (256 K × 4) Static RAM Features • Pin- and function-compatible with CY7C106B/CY7C1006B ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 80 mA @ 10 ns ■ Low CMOS standby power ❐ ISB2 = 3.0 mA


    Original
    PDF CY7C106D CY7C1006D CY7C106B/CY7C1006B CY7C106D 28-pin 400-Mil CY7C1006D 300-Mil

    CY7C1006D

    Abstract: CY7C106D CY7C106D-10VXI
    Text: CY7C106D CY7C1006D 1-Mbit 256K x 4 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C106B/CY7C1006B • High speed — tAA = 10 ns • Low active power — ICC = 80 mA @ 10 ns • Low CMOS standby power — ISB2 = 3.0 mA


    Original
    PDF CY7C106D CY7C1006D CY7C106B/CY7C1006B CY7C106D CY7C1006D CY7C106D-10VXI