CY7C1315CV18 Search Results
CY7C1315CV18 Price and Stock
Rochester Electronics LLC CY7C1315CV18-250BZCIC SRAM 18MBIT PAR 165FBGA |
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CY7C1315CV18-250BZC | Tray | 1,840 | 10 |
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Rochester Electronics LLC CY7C1315CV18-200BZCIC SRAM 18MBIT PARALLEL 165FBGA |
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CY7C1315CV18-200BZC | Tray | 407 | 10 |
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Rochester Electronics LLC CY7C1315CV18-250BZIIC SRAM 18MBIT PAR 165FBGA |
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CY7C1315CV18-250BZI | Tray | 379 | 9 |
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Rochester Electronics LLC CY7C1315CV18-167BZCIC SRAM 18MBIT PAR 165FBGA |
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CY7C1315CV18-167BZC | Tray | 281 | 10 |
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Rochester Electronics LLC CY7C1315CV18-250BZXCIC SRAM 18MBIT PAR 165FBGA |
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CY7C1315CV18-250BZXC | Tray | 79 | 10 |
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CY7C1315CV18 Datasheets (6)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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CY7C1315CV18 |
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18-Mbit QDR-II SRAM 4-Word Burst Architecture | Original | |||
CY7C1315CV18-167BZC |
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18-Mbit QDR -II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V | Original | |||
CY7C1315CV18-200BZC |
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18-Mbit QDR -II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V | Original | |||
CY7C1315CV18-250BZC |
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18-Mbit QDR -II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V | Original | |||
CY7C1315CV18-250BZI |
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18-Mbit QDR -II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V | Original | |||
CY7C1315CV18-250BZXC |
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18-Mbit QDR -II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V | Original |
CY7C1315CV18 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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CY7C1311CV18
Abstract: CY7C1313CV18 CY7C1315CV18 CY7C1911CV18
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Original |
CY7C1311CV18, CY7C1911CV18 CY7C1313CV18, CY7C1315CV18 18-Mbit CY7C1311CV18 CY7C1313CV18 CY7C1311CV18 CY7C1313CV18 CY7C1315CV18 CY7C1911CV18 | |
Contextual Info: CY7C1311CV18 CY7C1911CV18 CY7C1313CV18 CY7C1315CV18 PRELIMINARY 18-Mbit QDR -II SRAM 4-Word Burst Architecture Features Functional Description • Separate Independent Read and Write data ports • QDR-II operates with 1.5 cycle read latency when the DLL is enabled |
Original |
CY7C1311CV18 CY7C1911CV18 CY7C1313CV18 CY7C1315CV18 18-Mbit 300-MHz 600MHz) | |
Contextual Info: THIS SPEC IS OBSOLETE Spec No: 001-07165 Spec Title: 7C1313CV18/CY7C1315CV18, 18-MBIT QDR R II SRAM 4-WORD BURST ARCHITECTURE Sunset Owner: Jayasree Nayar (NJY) Replaced by: NONE CY7C1313CV18 CY7C1315CV18 18-Mbit QDR II SRAM 4-Word Burst Architecture 18-Mbit QDR® II SRAM 4-Word Burst Architecture |
Original |
7C1313CV18/CY7C1315CV18, 18-MBIT CY7C1313CV18 CY7C1315CV18 | |
Contextual Info: CY7C1313CV18 CY7C1315CV18 18-Mbit QDR II SRAM 4-Word Burst Architecture 18-Mbit QDR® II SRAM 4-Word Burst Architecture Features Configurations Separate independent read and write data ports ❐ Supports concurrent transactions CY7C1313CV18 – 1M x 18 • |
Original |
CY7C1313CV18 CY7C1315CV18 18-Mbit CY7C1313CV18 | |
CY7C1311CV18
Abstract: CY7C1313CV18 CY7C1315CV18 CY7C1911CV18
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Original |
CY7C1311CV18, CY7C1911CV18 CY7C1313CV18, CY7C1315CV18 18-Mbit CY7C1311CV18 CY7C1313CV18 CY7C1311CV18 CY7C1313CV18 CY7C1315CV18 CY7C1911CV18 | |
Contextual Info: CY7C1313CV18 CY7C1315CV18 18-Mbit QDR II SRAM 4-Word Burst Architecture Features Configurations • Separate independent read and write data ports ❐ Supports concurrent transactions CY7C1313CV18 – 1M x 18 ■ 300 MHz clock for high bandwidth ■ 4-word burst for reducing address bus frequency |
Original |
CY7C1313CV18 CY7C1315CV18 18-Mbit CY7C1313CV18 |