CY7C1315JV18 Search Results
CY7C1315JV18 Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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CY7C1315JV18-300BZC |
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18-Mbit QDR(R) II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V | Original | 451.4KB | 27 | ||
CY7C1315JV18-300BZXC |
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18-Mbit QDR(R) II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V | Original | 451.4KB | 27 |
CY7C1315JV18 Price and Stock
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Infineon Technologies AG CY7C1315JV18-300BZCIC SRAM 18MBIT PARALLEL 165FBGA |
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CY7C1315JV18-300BZC | Tray |
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Infineon Technologies AG CY7C1315JV18-300BZXCIC SRAM 18MBIT PARALLEL 165FBGA |
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CY7C1315JV18-300BZXC | Tray |
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Cypress Semiconductor CY7C1315JV18-300BZCQDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165 |
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CY7C1315JV18-300BZC | 3,463 | 1 |
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Cypress Semiconductor CY7C1315JV18-300BZXCQDR SRAM, 512KX36, 0.45ns PBGA165 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CY7C1315JV18-300BZXC | 588 | 1 |
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CY7C1315JV18 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: CY7C1311JV18, CY7C1911JV18 CY7C1313JV18, CY7C1315JV18 18-Mbit QDR II SRAM 4-Word Burst Architecture Features Configurations • Separate Independent Read and Write Data Ports ❐ Supports concurrent transactions CY7C1311JV18 – 2M x 8 ■ 300 MHz Clock for High Bandwidth |
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18-Mbit CY7C1311JV18, CY7C1911JV18 CY7C1313JV18, CY7C1315JV18 CY7C1311JV18 CY7C1911JV18 CY7C1313JV18 | |
Contextual Info: CY7C1311JV18/CY7C1911JV18 CY7C1313JV18/CY7C1315JV18 18-Mbit QDR II SRAM 4-Word Burst Architecture Features Configurations • Separate Independent Read and Write Data Ports ❐ Supports concurrent transactions CY7C1311JV18 – 2M x 8 ■ 300 MHz Clock for High Bandwidth |
Original |
CY7C1311JV18/CY7C1911JV18 CY7C1313JV18/CY7C1315JV18 18-Mbit CY7C1311JV18 CY7C1313JV18 CY7C1315JV18 |