Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    CY7C1320V18 Search Results

    CY7C1320V18 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CY7C1320V18 Cypress Semiconductor 18-Mb DDR-II SRAM Two-word Burst Architecture Original PDF
    CY7C1320V18-167BZC Cypress Semiconductor 18-Mb DDR-II SRAM two-word burst architecture, 167MHz Original PDF
    CY7C1320V18-200BZC Cypress Semiconductor 18-Mb DDR-II SRAM two-word burst architecture, 200MHz Original PDF
    CY7C1320V18-250BZC Cypress Semiconductor 18-Mb DDR-II SRAM two-word burst architecture, 250MHz Original PDF
    CY7C1320V18-300BZC Cypress Semiconductor 18-Mb DDR-II SRAM two-word burst architecture, 300MHz Original PDF

    CY7C1320V18 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CY7C1316V18

    Abstract: CY7C1318V18 CY7C1320V18
    Text: CY7C1316V18 CY7C1318V18 CY7C1320V18 PRELIMINARY 18-Mb DDR-II SRAM Two-word Burst Architecture Features Functional Description • 18-Mb density 2M x 8, 1M x 18, 512K x 36 — Supports concurrent transactions • 250-MHz clock for high vandwidth • Two-word burst for reducing address bus frequency


    Original
    PDF CY7C1316V18 CY7C1318V18 CY7C1320V18 18-Mb 250-MHz CY7C1316V18/CY7C1318V18/CY7C1320V18 CY7C1316V18 CY7C1318V18 CY7C1320V18

    Untitled

    Abstract: No abstract text available
    Text: CY7C1316V18 CY7C1318V18 CY7C1320V18 PRELIMINARY 18-Mb DDR -II SRAM 2-Word Burst Architecture Features Functional Description • 18-Mb density 2M x 8, 1M x 18, 512K x 36 • 250-MHz clock for high bandwidth • 2-Word burst for reducing address bus frequency


    Original
    PDF CY7C1316V18 CY7C1318V18 CY7C1320V18 18-Mb 250-MHz 13x15 pit18/CY7C1320V18 300-MHz

    CY7C1316V18

    Abstract: CY7C1318V18 CY7C1320V18
    Text: 316V18 CY7C1316V18 CY7C1318V18 CY7C1320V18 ADVANCE INFORMATION 18-Mb 2-Word Burst SRAM with DDR-II Architecture Features Functional Description • 18-Mb Density 2M x 8, 1M x 18, 512K x 36 — Supports concurrent transactions • 300-MHz Clock for High Bandwidth


    Original
    PDF 316V18 CY7C1316V18 CY7C1318V18 CY7C1320V18 18-Mb 300-MHz CY7C1316V18 CY7C1318V18 CY7C1320V18

    CY7C1322V25

    Abstract: CY7C1397V25
    Text: 397V25 CY7C1397V25 CY7C1322V25 ADVANCE INFORMATION 18-Mb 2-Word Burst SRAM with DDR-I Architecture Features Functional Description • 18-Mb Density 1M x 18, 512K x 36 — Supports concurrent transactions • 300-MHz Clock for High Bandwidth • 2-Word Burst for reducing address bus frequency


    Original
    PDF 397V25 CY7C1397V25 CY7C1322V25 18-Mb 300-MHz CY7C1397V25/CY7C1322V25 CY7C1322V25 CY7C1397V25