D 132 SMD DIODE Search Results

d 132 smd diode

Contextual Info: RB400D is — K /D io d e s R B 400D JUxllaiEv a y 3* — K Silicon Epitaxial General Use Rectifying Schottky Barrier Diode • W fé \r5 È I2 !/Dimensions Unit : mm 7T&Z 1) (SMD)0 2) ra iB H ’P & 5 o 3) Bio eig i • Features 1) Surface mount type (SMD).

Contextual Info: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYL1025B series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance GENERAL DESCRIPTION

kvp smd

Abstract: kvp 42 DIODE kvp 26A M kvp diode 2005C 1.5 khp SMD kvp XMR5 0709a PKF SMD
Contextual Info: AXIAL LEAD DIODES CURRENT P R V VO LTS R E C O V E R Y (nS) SU R G E (A) S E R IE S PAGE 50-1000 50-1000 50-1000 50-1000 2000 to 3000 1000 to 4000 9000 4500 to 6000 7000 to 8000 9000 to 10000 11000 to 12000 1000 to 5000 10000 to 15000 STANDARD STANDARD STANDARD

f20lc

Abstract: SF5LC20U 20LC20u D200LC40B smd 10 20U D200L DIODE 542 SMD
Contextual Info: S u p e r F a s t R e c o v e r y D io d e s Twin Diodes Absolute Maximum Ratings Electrical Characteristics |R t rr 0j/ Vf Parts No. V rm lo Conditions I fsm max Conditions (max) [V] [A] If VR=VRM [°C] [A] [A] [mA] 132 125 81 61 45 [V] 0.98 1.3 0.98 1.3

smd L6

Abstract: L6 smd 2FL20U SFSL60 L20U 2fl20u40 F20L60
Contextual Info: Super Fast Recovery Diodes High fre q u e n c y re c tify in g Electrical Characteristics Absolute Maximum Ratings V rm to tv ] [A ] 200 1 400 0.9 < M 1 F L ?O J 200 1. 1 D 1FL20U 200 1. 1 400 0.8 200 1.5 400 1.3 Type No. D 1N L2 0 U 40 40 D 2FL20U 40 200

f6l20u

Abstract: 1FK70 f6l20 f10l60 18smd 10L20U D6L20U D3L20 30L60
Contextual Info: Super Fast Recovery Diodes High fre q u e n c y re c tify in g S TO -220 Lead type Single Diodes FTO-220 A bsolute M axim um Ratings Type No. V rm lo Conditions Ifsm Electrical C haracteristics [A] [°C] [A] rc] [°C] 25 -5 5 -1 5 0 150 200 1 40 400 0.9

E-PACK

Abstract: smd 2f 1fp3
Contextual Info: S chottky Barrier Diodes High fre q u e n c y re c tify in g IT0-220 1F Single Diodes TO-220 Absolute Maximum Ratings Type No. V rm lo [V ] [A] D1NS4 40 6 ☆ M 1FP3 30 1.29 ☆ M 1 FS4 40 1.33 * 60 1.2 6 40 6 D1FP3 60 D1FS4A D2S4M 6M 30 40 ra 59* 60 D 1FS4

d 132 smd diode

Contextual Info: Schottky Barrier Diode Twin Diode M fm OUTLINE Package : STO-220 DF20JC10 Unit-mm Weight 1.5g Typ 10.2 100V 20A Feature • SMD • <SlR=0.7mA • SMD • S iy R T È Î E iË c I l_y (<_ <L U'' • Resistance for thermal run-away • High lo Rating-Small-RKG

cd 40118

Contextual Info: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYR1045CTD series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance QUICK REFERENCE DATA

m5946

Abstract: 3FS-4A 3FS4A
Contextual Info: Schottky Barrier Diodes High f r e q u e n c y r e c t if y in g IT 0 -2 2 0 1F Single Diodes T O -220 Electrical C haracteristics Absolute Maximum Ratings Cj qi 0ja m ax V r = V rm [m A ] (typ) (m ax) (max) [p F ] [• c / w ] [• c / w ] [tJ /W ] 0 .8

Contextual Info: Square ended SMD 500 mWatt Voidless zeners 1N6321US thru 1N6355US Hard GlassTungsten MELF "D" Package nJ - Applications Low noise zener diodes with hard glass tungsten, non-rolling SMD design. Able to replace less robust families like1N4099and 1N5530B. Forusein hostile environments and

10VTZ

Contextual Info: Schottky Barrier Diode Twin Diode mtm DF10SC6 O UTLINE U n it-m m Package : STO-220 W e igh t 1.5g T y p u^háLÍ°-(M) 10.2 60 V 10A Feature * SMD < SM D ' T j= 1 5 0 °C 1 Tj= 150°C 1P rrs m 1 P rrs m R ating Main Use >X ' f ' y 1S w itc h in g R egulator

Contextual Info: Schottky Barrier Diodes High fre q u e n c y re c tify in g Absolute Maximum Ratings V rm to Conttns tv ] [A ] C-c] „ S1ZA S4 40 I .2 49* D 4 SC 6 M 60 4 40 5 Type No. . Electrical Characteristics Ifs m Tstg Tj Vf max [A ] C'C] C'C] [V ] 40 — 40 — 150

cd 40118

Abstract: d 132 smd code diode schottky diode cross reference
Contextual Info: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYR1045CTD series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance QUICK REFERENCE DATA

Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : E-pack DE10SC4 Unit-mm Weight 0.326g Typ 40 V 10A Feature • SM D >SMD • Tj=150°C 1Tj=150°C • P r r s m T ’A ' ^ V S ' i f S l i E 1 P r r s m Rating 1 High lo Rating -Small-PKG Main Use

Contextual Info: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYR745B, PBYR745D series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance

smd diode 949

Abstract: transistor SMD 361 C120T101 diode c05*10 varistor 60 volt C050T331 C050T4R7 varistors rfe transistor a 949 JMV0402C050T120
Contextual Info: MULTILAYER CHIP VARISTOR JMV C Series: SMD ESD & EMI MOV INTRODUCTION FEATURES Metal Oxide based chip varistors (JMVs) are used for transient voltage suppression. JMVs have non-linear voltage-current behavior, which is similar to that of Zener Diode. Each grain in

zener smd diode 101

Abstract: ZENER DIODE t2 201 Zener diode CZRC5348 CZRC5349 CZRC5350 CZRC5351 CZRC5352 CZRC5388 SMD DIODE 517
Contextual Info: COMCHIP Surface Mount Zener Diode SMD DIODE SPECIALIST CZRC5348 Thru CZRC5388 Voltage: 11 - 200 Volts Power: 5.0 Watts Features For surface mounted applications in order to optimize board space Low profile package Glass passivated junction Low inductance Built-in strain relief

hm marking smd DIODE

Abstract: DF20JC10 TC121 SHINDENGEN DIODE DIODE marking VU
Contextual Info: Schottky Barrier Diode Twin Diode mnm DF20JC10 o u tlin e 100V 20A Feature • SM D • SMD • filR = 0 .7 m A • L o w lR =0.7m A • jw is æ ç ë c u ic < L ' • Resistance for thermal run-away • High lo Rating -Small-PKG • y -S P C .L C D t-^ ^

1N4148 SMD LL-34

Abstract: Diode smd 82T SMD 82T LTZ-MR15 SC-40 DO-34 ZENER da226u 1N4606 1N4148 LL-41 1SR35-100
Contextual Info: : t — K /D io d e s T .'f " j f - > • ? '£ '< i [ — K /S w itc h in g Diodes • ¡ S S É /t^ 'i *j 3 - 's * ? $ Part No. Cond. Package Page V r V V f (V) Max. I f (mA) 1SS353 80 1.2 100 USM 34 1SS354 50 1.2 100 USM 34 1SS355 35 1.2 100 USM 34 RLS-71

PF0040

Abstract: 2sk mosfet pf0030 hitachi 2sj217 2SJ299 2sk mosfet rf power 2sk1299 2SJ214 2SJ295 2SK1919
Contextual Info: HITACHI 1.5.4 13 New DIV-L Series • • 2.5V and 4V gate drive device High speed switching 30% reduction in fall time, tf • Strong resistance to inductive load over voltage avalanche breakdown. • Stronger built-in diode breakdown capability • Wide range of P-channel devices

pt1017

Abstract: mt 1389 vde converter siemens modules GR 60 48V 120 A SMD Code 12W SOT-23 600w 12V 230V Inverter schematic mw 137 600g PT1000 NTC TEMPERATURE CHART smd 4pk EPL1902S2C 67127490
Contextual Info: Section Reference Index Connectors, Cable Assemblies, IC Sockets. . . . . . . . . . . . . . . . 12-132 Semiconductors, ICs, Transistors, Diodes, Rectifiers . . . 133-239 3.6 EC SI Crystals, Oscillators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240-253

Contextual Info: Philips Semiconductors Product specification Rectifier diodes BYV40E series ultrafast, FEATURES SYMBOL QUICK REFERENCE DATA V R = 150 V/ 200 V • Low forward volt drop • Fast switching • Soft recovery characteristic

BYV40

Abstract: SC18 SMD footprint design
Contextual Info: Philips Semiconductors Product specification Rectifier diodes ultrafast BYV40 series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high efficiency dual rectifier diodes in a plastic envelope suitable for surface mounting, featuring low forward voltage drop,