D 151 811 Search Results

M3263

Abstract: PBYR30035CT PBYR30040CT PBYR30045CT PBYR30 M3269 20UNC
Contextual Info: PBYR30035CT PBYR30040CT PBYR30045CT 711002b 0041 fl14 151 • PHIN DEVELOPMENT DATA This data sheet contains advance information and specifications are subject to change w ithout notice. SbE D PHILIPS INTERNATIONAL ■ -P 0 3 -Z Ì SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES

Contextual Info: Moulded Radial Lead Capacitors 50/63,100,200V Capacitance Table - Stable Dielectric X7R 8113Z S ize 50 R a te d v o lta g e d .c . Cap. range 10pF 12 15 18 22 27 33 39 47 56 68 82 100 120 150 180 220 270 330 390 470 560 680 820 1.0nF 1.2 1.5 1.8 2.2 2.7 3.3

transistor a2160

Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Contextual Info: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124

Contextual Info: Dipped Radial Lead Capacitors 50V - 200V Capacitance Table - Ultra-stable Dielectric C0G Size 8111M 50 Rated voltage d.c. Cap. range 3.9pF 4.7 5.6 6.8 8.2 10 12 15 18 22 27 33 39 47 56 68 82 100 120 150 180 220 270 330 390 470 560 680 820 1.0nF 1.2 1.5 1.8

8111M

Contextual Info: Dipped Radial Lead Capacitors 50V - 200V Capacitance Table - Stable Dielectric X7R Size 8111M 50 Rated voltage d.c. Cap. range 100pF 120 150 180 220 270 330 390 470 560 680 820 1.0nF 1.2 1.5 1.8 2.2 2.7 3.3 3.9 4.7 5.6 6.8 8.2 10 12 15 18 22 27 33 39 47 56

Contextual Info: 12342567839A4BC9DAE5FDB5 165 1 345678492 • • • • 2&&'!8178C8!1  *1+'CC8A17'C)81+,-A.1 1 /0-811FBC#111808C!81,BCA.1 28AC9113F1A*C81A.,81 

8121M

Abstract: 8121N 1n00 8123Z
Contextual Info: Dipped Radial Lead Capacitors 50V - 200V Capacitance Table - Ultra-stable Dielectric C0G Size 8111M 50 Rated voltage d.c. Cap. range 3.9pF 4.7 5.6 6.8 8.2 10 12 15 18 22 27 33 39 47 56 68 82 100 120 150 180 220 270 330 390 470 560 680 820 1.0nF 1.2 1.5 1.8

ATF-21100

Abstract: 6SS4 ATF-21100-GP1 AT-8111
Contextual Info: HEWLETT-PACKARD/ CMPNTS blE D HEW LETT PACKARD • 4 4 4 7 5 A 4 D D D T T I E T4fl H H P A ATF-21100 AT-8111 0.5-6 GHz Low Noise Gallium Arsenide FET Features • • • Chip Outline Low Noise Figure: 0.9 dB typical at 4 GHz High Associated Gain: 13.0 dB typical

ATF21100-GP3

Abstract: TF2110 ATF-21100-GP1
Contextual Info: Thal HEWLETT WlHM PA C K A R D ATF-21100 AT-8111 0.5-6 GHz Low Noise Gallium Arsenide FET Features Chip Outline • • _ 4»3 • Low Noise Figure: 0.9 dB typical at 4 GHz High Associated Gain: 13.0 dB typical at 4 GHz High Output Power: 23.0 dBm typical Pi dB

Contextual Info: INDEX NUMERICAL LISTING AND LOCATION OF MILL-MAX SOCKET ASSEMBLY NUMBERS WITH REFERENCE TO MILL-MAX PINS MILL-MAX SOCKET ASSEMBLY NUMBER MILL-MAX PIN # REF. PAGE # 101-XX-XXX-41-56XX00 104-XX-XXX-41-770X00 104-XX-XXX-41-780X00 110-XX-308-10-001X00 110-XX-314-10-001X00

ATF-21100

Abstract: ATF-21100-GP1 ATF-21100-GP3 ATF21100 ATF21100-GP3 RF FET TRANSISTOR 3 GHZ atf21100 model AT-8111
Contextual Info: HEWLETT-PACKARD/ CMPNTS m blE D • H EW LETT PA C K A R D 44475Ö4 □ □□cm 2 ATF-21100 AT-8111 0.5-6 GHz Low NoiS6 Gallium Arsenide FET Features • • • T4Û ■ HPA Chip Outline Low Noise Figure: 0.9 dB typical at 4 GHz High Associated Gain: 13.0 dB typical

ATF-21100

Abstract: AT-8111 Avantek amplifier 8 12 GHz ATF-21100-GP1 AVANTEK transistor Avantek UA-152
Contextual Info: AVANTEK Q EOE D INC avan tek • llHllfab □ □ □ h S b G ATF-21100 AT-8111 0.5-6 GHz Low Noise Gallium Arsenide FET Features Avantek Chip Outline • • _483 p m _ • 7 Low Noise Figure: 0.9 dB typical at 4 GHz High Associated Gain: 13.0 dB typical

TA8172AF

Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Contextual Info: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16

Contextual Info: HEWLETT-PACKARD/ CMPNTS LIE D • MMM75AM 0DlDD7fl 3flS ■ H P A M S A -0 43 5, -04 36 M O D A M P C a sc ad ab le S ilic o n B ip olar M o n o lith ic M icro w av e Integrated C irc u it A m p lifie rs HEW LETT PACKARD Features 35 micro-X Package1 •

MP1410

Abstract: EJB241808 EJB362408 EJB161606 EJB121206 EJB161608 CROUSE-HINDS EJB EJB100806 EJB121208 EJB242408
Contextual Info: 1E EJB Junction Boxes Cl. I, Div. 1 and 2, Groups B, C, D Cl. II, Div. 1, Groups E, F, G Cl. II, Div. 2, Groups F, G Cl. III NEMA 3, 4, 4X*, 7, 9 Ex d IIB + H2 T6, IP66 Explosionproof Dust-Ignitionproof Raintight Wet Locations Applications: EJB junction boxes are used in threaded

Contextual Info: MSA-0435, -0436 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers HEW LETT PACKARD LVJ Features • • • • • • 35 micro-X Package1 Cascadable 50 Q Gain Block 3 dB Bandwidth: DC to 3.8 GHz 12.5 dBm typical Pi dB at 1.0 GHz

Contextual Info: www.avx.com AVX SMD Power Inductors Version 14.5 Table of Contents LMax SMD Non-Shield Power Inductor LMXN Series – Non-Shielded Style B 2-3 Inductance Range: 0.47 - 470 H Rated Current: 0.53 - 30 A LMXS Series – Shielded Style J LMXN Series – Non-Shielded Style C

8131M

Abstract: 8123Z 100v 4p7 8133Z 8121N 1N00 8P20 y 683 8171M bp c01 100v 3p9
Contextual Info: Radial Lead Capacitors Marking and Ordering information Marking information All encapsulated capacitors are marked with:- Capacitance value, tolerance, rated d.c. voltage, dielectric, and where size permits Syfer logo. All moulded units are marked additionally with year and week of manufacture, and capacitance value on top of the unit.

Contextual Info: www.avx.com AVX SMD Power Inductors Version 14.2 Table of Contents LMax SMD Non-Shield Power Inductor LMXN Series – Non-Shielded Style B 2-3 Inductance Range: 0.47 - 470 H Rated Current: 0.53 - 30 A LMXS Series – Shielded Style J LMXN Series – Non-Shielded Style C

yx 8081

Abstract: W250 A1A
Contextual Info: Technical Data Glenair Series ITS and ITS-RG MIL-DTL-5015 Type Reverse Bayonet Connectors Insert Rotation Alternate Positions ±2° D isposiz. Spc.104 αD D isposiz. D isposiz. D isposiz. DSpc.104 isposiz. DSpc.104 isposiz. Spc.104 Spc.104 Spc.104 α ±2°

LM 8105

Abstract: SD318 AN6610 5354A B1134 SE773 CPL-2503 B1133 SE158 6363t
Contextual Info: [•a OPTOELECTRONICS P art N um ber PART NUM BER INDEX Page P art N um ber Page P art N um ber Page P art N um ber Page P art Num ber 1N6264 37 C N Y17F-3 13 G M A 8975 C 144 H11D4 14 H CPL-2730 1N6265 37 C N Y17F-4 13 G M C 2275 C 148 H11F1 20 Page _ 17

Contextual Info: Dip Ultra-stable Dielectric 1 % 3.9pF 4.7 5.6 6.8 8.2 10 COG % 3p9 4p7 5p6 6p8 8p2 100 12 120 15 18 150 180 220 270 330 390 470 560 680 820 22 27 33 39 47 56 68 82 100 120 150 180 220 270 330 390 470 560 680 820 l.OnF 1.2 1.5 1.8 2.2 2.7 3.3 3.9 4.7 5.6 6.8

100v 4p7

Abstract: m3181 bz 103 c24 561 1kv 222 3KV 333 1kv 1N00 8121N 8P20 8171M
Contextual Info: Radial Lead Capacitors Marking and Ordering information Marking information All encapsulated capacitors are marked with:- Capacitance value, tolerance, rated d.c. voltage, dielectric, and where size permits Syfer logo. Example: 1000pF ±10% 50V 2X1 dielectric

MSG100L41

Abstract: TSS1G41 SF5B42 SM6G14 TSS2G41 1J44 1J-44 TSS25J47S TSS2J2A44S f0r3g
Contextual Info: •A L P H A N U M E R IC A L IN D E X # Type No. CU16J6S3 CU16L6A3 CU16Q6S3 CU30J6S3 CU30L6A3 CU30Q6S3 CU50J6S3 CU50L6A3 CU50Q6S3 CU80J6S3 CU80L6A3 CU80Q6S3 CU80U6A3 CU150J6S3 CU150L6A3 CU150Q6S3 CU150U6A3 CU300J6S3 CU300F6A3 CU300Q6S3 CU300U6A3 MSA60G41