D 843 POWER TRANSISTOR Search Results

p844m

Abstract: p845 P843M MP844 D 843 Transistor "micro power systems" mp845 MP843 dual fet L6
Contextual Info: aGE D • b 017 4 4.4 00033=10 5 I MICRO POWER SYSTEMS E /y i INC M P 843 MICRO POW ER SY ST EM S M P 844 M P 845 T'29'Z1 ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL SILICON NITROX FIELD EFFECT TRANSISTORS DIFFUSED ISOLATED . en = 8nV/vr H T TYP.

D 843 Transistor

Abstract: TRANSISTOR 841 irf 840 D 843 Power Transistor irf 44 n transistor irf 840 843 transistor 840FI irf 44 ns TRANSISTOR 843
Contextual Info: rZ7 SGS-THOMSON ^7# 0 M »IIU iraM O g S IRF 840/FI-841/FI IRF 842/FI-843/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^D S(on IRF840 IRF840FI 500 V 500 V 0.85 fi 0.85 fi IRF841 IRF841FI 450 V 450 V 0.85 fi 0.85 0 IRF842 IRF842FI 500 V

D 843 Transistor

Abstract: 843FI e IRF 840 Application of irf840 IRF840 transistor irf 840 IRF 100A irf 44 n irf 44 ns SC 63 840
Contextual Info: rZ Z * •1 Ë . SGS-THOM SON IRF 840/FI-841/FI « » IL lË T O M O e s_IRF 842/FI-843/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS R d S od IRF840 IRF840FI 500 V 500 V 0.85 n 0.85 a IRF841 IRF841FI 450 V 450 V 0.85 n 0.85 Q IRF842

D 843 Transistor

Abstract: irf 840 TRANSISTOR 841 sgs 841 IRF 80A D 843 Power Transistor irf z 44 st irf 44 n transistor irf 840 thomson tv
Contextual Info: 30E 3> • 7 ^ 2 3 7 002^01^ 7 ■ ^ T : 3 °l~ i3 / 7 7 SG STHO M SO N IR F 8 4 0 / F I - 8 4 1 /F I 4 7 l a [^D^ Q i[L[i(glF^(Q)K!]D(gi_ IR F 8 4 2 / F I - 8 4 3 / F 1 jS fi S - thomson" TYPE IRF840 IRF840FI IRF841 IRF841FI IRF842 IRF842FI IRF843

CR21-103J-T

Abstract: TM 1298 transformer capacitor 473j 100 EEFCDOJ470R D 843 Transistor LTC1436CGN-PLL dale r025f r025f Regulated Power Supply with mosfet switching Sche IRLML2803
Contextual Info: DEMO MANUAL DC140 DESIGN-READY SWITCHERS LTC1436-PLL 2-Output Synchronous Buck Converter with Versatile Frequency Controller U DESCRIPTIO Demonstration circuit DC140 is a 2-output, general purpose evaluation platform intended to demonstrate the many functions of the LTC 1436-PLL and to make it easy

NTE58

Abstract: NTE59
Contextual Info: NTE58 NPN & NTE59 (PNP) Silicon Complementary Transistors High Power Audio Output Features: D High Power Dissipation D Wide Safe Operating Area Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V

D 843 Transistor

Abstract: 843 transistor
Contextual Info: Central CZT3120 Semiconductor Corp. SURFACE MOUNT NPN SILICON SWITCHING POWER TRANSISTOR DESCRIPTION: The Central Semiconductor CZT3120 NPN Switching Power Transistor, manufactured by the epitaxial planar process, combines both power and high speed switching characteristics in a

UFN841

Abstract: UFN041 mosfet ir 840 features Hjc 22
Contextual Info: UNITRODE CORP 9347963 T2 UNITRODE DeT| T347Tb3 D01D7ÔÜ & CORP 92D 10780 D f~ *? - 3 POWER MOSFET TRANSISTORS [“ 500 Volt, 0.85 Ohm N-Channel FEATURES » Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown

Contextual Info: BSE D • Ô 2 3 b 3 2 0 0D 17E bö NPN Silicon Darlington Transistors S IE M E N S / SPCLi • • • 4 « S IP SMBTA13 SEMICONDS SMBTA14 High DC current gain High collector current Collector-emitter saturation voltage Type Marking Ordering code fo r versions In bulk

f840

Abstract: IRF842R
Contextual Info: 3 H A R R IS IR F840/841/842/843 IRF840R/841R/842R/843R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T 0 -2 2 0 A B • 7A and 8A, 450V - 500V TOP VIEW • rDs on) = 0 .8 5H and 1.1 fl DRAIN (FLANGE) • Single Pulse Avalanche Energy Rated*

Contextual Info: Power Transistors 2 S D 1 7 4 8 , 2SD1748, 2SD1748A 2 S D 1 7 4 8 A Package Dim ensions U n it ! mm Silicon NPN Triple-D iffused Planar D arlington Type 3.7m ax 7.3m ax. AF Power A m plifier C om plem entary Pair with 2SB1178, 2S B 1178A 3.2m ax. 0 .9 ± 0 . 1

Contextual Info: 23633^ o d o ü 7 3 h *ì g 7 • BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H BC818-16 = 6E BC818-25 = 6F BC818-40 = 6G PA CKA GE O U TLINE DETAILS A LL DIM ENSIO NS IN m m

MJE370

Abstract: MJE520
Contextual Info: r ^ z 7 7 S G # S - T H O M S O MJE370 MJE520 N M ^ Q 0 !y = © r a © R l g S COMPLEMENTARY MEDIUM POWER TRANSISTORS DESCRIPTION The MJE370 (PNP type) and the MJE520 (NPN type) are silicon epitaxial-base transistors in Jedec TO-126 plastic package, designed for use in gene­

mje520

Contextual Info: • 7 ^ 5 3 7 0Qgq067 s g s - th o m 3 ■ *T s o n m je 3 ?o D [^@i[LiCT^ ô iD(gl_ S G S - T H OM S ON 3DE M JE520 D COMPLEMENTARY MEDIUM POWER TRANSISTORS DESCRIPTIO N The MJE370 (PNP type) and the MJE520 (NPN type) are silicon epitaxial-base transistors in Jedec

irf 1962

Abstract: irf all transistor 840 Transistor 0235 IRF transistor irf 840 IRF 840 MOSFET IRF 840 transistor irf 647 MTP8N45 IRF843
Contextual Info: MOTOROLA IRF840 IRF841 IRF842 IRF843 SEMICONDUCTOR TECHNICAL DATA Part Number N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR T h e se T M O S Po w er F E T s are designed for high voltage, high speed pow er sw itch in g applications su ch as sw itch in g regulators,

MAX843

Contextual Info: 19-0388; Rev 7 ; 3/96 JVW YXA JVX Low -Noise, R egulated, -2 V GaAsFET Bias F e a tu re s The M A X 8 40 /M A X 84 3/M A X 84 4 lo w -n o ise , in v e rtin g c h a rg e -p u m p p o w e r s u p p lie s are id e a l fo r b ia s in g GaAsFETs in cellular telephone transm itter am plifiers.

63CV100BS

Abstract: IPC-A-600E 63CV10 DC242 coiltron 2802S-02G2 TPSD107M010R0065 10BQ100 CTX200-4 LT1777
Contextual Info: DEMO MANUAL DC242 DC/DC CONVERTER LT1777 High Voltage, Low Noise Step-Down DC/DC Converter U DESCRIPTIO Demonstration Circuit DC242 is a high input voltage, low noise step-down buck regulator using the LT 1777 switching regulator IC. Typical applications are automotive cellular and GPS receivers, low noise telecom and

Contextual Info: SIEMENS BCR 112 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R1=4.7ki2, R2=4.7k£2 Pin Configuration Q62702-C2254 1 =B Package II CO Ordering Code WFs O Marking BCR 112 LU II CNJ

TIP11s

Abstract: TIP116 TIP110 TIP111 TIP112 TIP115 TIP117 USA060
Contextual Info: TIP115 TIP116 TIP117 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in m onolithic Darlington circu it fo r audio ou tp u t stages and general purpose am plifier and switching applications. T 0-220A B plastic envelope. N-P-N complements are

Contextual Info: TIP115 TIP116 TIP117 _ V PHILIPS INTERNATIONAL SbE ]> • V _ 711DûEb OÜ43S5b 742 ■ PHIN SILICON DARLINGTON POWER TRANSISTORS r -3 3 - 3 P-N-P epitaxial-base transistors in monolithic Darlington circuit for audio output stages and general

2sb1748

Abstract: 2sb174 2SB1178 2SB1178A 2SD1748 2SD1748A
Contextual Info: 2SD1748, 2SD1748A Power Transistors 2SD 1748, 2SD 1748A Package D im ensions Unit ! mm Silicon NPN Triple-Diffused Planar Darlington Type 3 . 7m a x 7.3max. AF Power A m plifier C om plem entary Pair with 2SB1178, 2S B1178A 0.9 :0.1 0.5max. I 3. 2m ax . • Features

Contextual Info: T IP 1 1 5 T IP 1 1 6 J _ T IP 1 1 7 V . SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier and switching applications. TO-220AB plastic envelope. N-P-N complements are

d844

Abstract: Transistors BD 330
Contextual Info: ^[ _ PHILIPS INTERNATIONAL BD840 BD842 BD844 SbE D • 7110fl2b 00M303L. 34T « P H I N T-33-l T SILICON PLANAR EPITAXIAL POWER TRANSISTORS P-N-P silicon transistors, in a plastic T 0-2 0 2 envelope, recommended for use in television circuits and

Contextual Info: SIEMENS BUZ 308 SIPMOS Power Transistor f • N channel • Enhancement mode • Avalanche-rated Type BUZ 308 ^DS 800 V ^DS on 4 Í2 2.6 A Package Ordering Code TO-218 AA C67078-S3109-A2 Maximum Ratings Parameter Symbol Continuous drain current Values