D 92 M - 02 DIODE Search Results

54ACTQ08DMQB-RH

Abstract: 54ACTQ08FMQB qml-38535 54ACT08 GDFP1-F14 E343 MARK T7G Tomy
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add device type 02. Add vendor CAGE 27014. Add case outlines C and D. Technical and editorial chanqes throughout. 91-12-30 M. A. Frye B Changes in accordance with 5962-R135-92 92-07-31 Thomas M. Hess C Add vendor CAGE 01295 for device type 02. Change drawing format to

MBD501

Contextual Info: R3S725S ~ÉH M O TO RO LA SC 89D < 0 IO D E S /O P T O T“-o*7-o'l 77456 DE I t,3ti7SSS 007745b T J~~ Hot-Carrier Schottky) Diodes CASE 318-02 (TO-236AA) Standard CASE 182-02 (TO-226AC) TO-92 Hot-Carrier diodes are ideal for VHF and UHF mixer and detector applications as well as many higher frequency

Contextual Info: 7294621 POWEREX INC Dim A B C D E F G H I J K L M N O P Q bg Inches 3.62*.02 3.15 .24 .22 1.38 ±.02 .28 .83 .709 .335 1.02 .394 .807 .531 .472 1.181 .758 .118 1 F| 7ET4t,21 PDDDTBfi S |~_D f T-33-2 Metric 92 ±0.4 80 6 5.5 35 ±.4 7 21 18 8.5 26 10 20.5 13.5

BC547 sot package sot-23

Abstract: BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

BC337 BC547

Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

FZ400R17KE3

Contextual Info: Technische Information / technical information FZ400R17KE3 IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Feldstop IGBT³ und EmCon³ Diode 62mm C-series module with trench/fieldstop IGBT³ and EmCon³ diode IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten / preliminary data

Contextual Info: Schottky-Barrier Diodes Dual package Ratings and characteristics Maximum rating Vrrm lo *1 TS802C06 TS802C09 TP802C04 TP802C06 TP802C09 ESAC82-004 ESAC82M-004 O II CO ^1 5.0 Mass Grams Fig. No. Irrm * 3 Max. mA Dimensions -40 t o +125 0.55 If=2.5A 5.0 0.6

ESAB82-004

Abstract: ESAB82M-004 ESAB82M-006 ESAB85-009 KP823C04 KS823C04 TP801C04 TP801C06 YG801C04 YG801C06
Contextual Info: Schottky-Barrier Diodes Dual package Ratings and characteristics Type M axim um ratin§ V lo rrm Volts KS823C04 40 KP823C04 40 40 If s h # 2 *1 Am ps. Am ps. 5.0 Tc=87°C 5.0 Tc=87°C) 5.0 Tc=103°C) Therm al rating Tj and Tstg °c -40 t o +125 Characteristics Ta=25°C)

Contextual Info: SEMIKRON Vrsm V rrm dv/ V Ita v (sin. 180; Tease = 85 °C 95 A V/|!S V SEMI PACK 1 Thyristor/ Diode Modules Itrms (maximum value for continuous operation) 150 A V drm dt)cr _ - SKKH 91/04 D - SKKH 91/06 D SKKH 92/06 D 500 SKKT 91/08 D SKKT 92/08 D1) SKKH 91/08 D

DO-205AB

Contextual Info: Bulletin I2029 rev. A 02/02 240U R . SERIES STANDARD RECOVERY DIODES Stud Version Features Diffused diode Wide current range 320A High voltage ratings up to 1200V High surge current capabilities Stud cathode and stud anode version Hermetic metal case Typical Applications

MMBF4856

Abstract: pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

68W SOT

Abstract: ultra low noise 12GHz 64W SOT23 AUs SOT363 BAS 40-04 Infineon BAS 68-04 BAT 43 - 46 - 85 - 86 61 SIEMENS DIODE BAT 19 SOT143 DUAL DIODE
Contextual Info: Small CHIPS for big visions Schottky Diodes h t t p : / / w w w. i n f i n e o n . c o m Never stop thinking. max. max. typ typ t ion lica V R=0 V CT UF ( typ App ) IF = 10 m A ) IF = 1m A UF ( IF Sin gle Dua l iso lat e Dua d l se ries Dua l co m. Cat Dua

RG4 DIODE

Abstract: 1N5821 MCB843 b35 DIODE schottky marking JB SCHOTTKY BARRIER DIODE 1N5820 1N5822 IEC134 MCB841
Contextual Info: SbE D • 7 1 1 D fi2 b r ilill J 9 UC1IHWVIIUUVIVI9 O lim c m i 7 T T ■ P H IN 11 T Controlled avalanche Schottky barrier diodes P H I L I P S IN T E R N A T IO N A L D E S C R IP T IO N Schottky barrier diodes in herm etically se aled S O D 8 4 A Implosion Diode ID ) envelope,

DWEP

Contextual Info: Fast Recovery Epitaxial Diodes FRED Chips VRRM min Type mA u TJ= 12S-C v .-w v * , mA DWEP 27 -02 DWEP 37 -02 DWEP 77 -02 200 100 150 500 0.2 0,35 0.65 5 11 20 54 91 244 85 70 70 DWEP DWEP DWEP DWEP DWEP DWEP DWEP DWEP 8 12 15 23 25 35 55 75 -06 -06 -06 -06

Contextual Info: SKMT 92, SKKL 92 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 1 Thyristor / Diode Modules NOGL NOOL= NJOL N VTT SATT SBTT S¥TT N WTT SCTT S[TT S@TT QMDN R VB D F*2 > SWTX M5 R WB YEI GHLM VCZTW? GHH; VCZSC? GHLM VCZS[? GHLM VCZS@? GHH; VCZS@? SVTT SWTT GHLM VCZSW?

IXYS MCC 95-12 io8B

Abstract: IXYS MCD 95-08 io8b ixys mcc 132 12 IXYS MCd 95-12 IO8B
Contextual Info: MCC 95 MCD 95 ITRMS = 2x 180 A 2x 116 A ITAVM = VRRM = 800-1800 V Thyristor Modules Thyristor/Diode Modules 3 VRSM VDSM VRRM VDRM Type V 900 1300 1500 1700 1900 V 800 1200 1400 1600 1800 Version MCC 95-08 MCC 95-12 MCC 95-14 MCC 95-16 MCC 95-18 Symbol 1B io1B /

io1B

Abstract: io8B IXYS MCD 95-16 IO8B mcc95 16 101 IXYS MCC 95-12 IXYS MCD 95-08 io8b IXYS MCd 95-12 thyristor module IXYS MCD 95-08 THYRISTOR 9508 DIN ISO 2768 screw
Contextual Info: MCC 95 MCD 95 Thyristor Modules Thyristor/Diode Modules VRSM VDSM VRRM VDRM Type V 900 1300 1500 1700 1900 V 800 1200 1400 1600 1800 Version MCC 95-08 MCC 95-12 MCC 95-14 MCC 95-16 MCC 95-18 Symbol ITRMS = 2x 180 A ITAVM = 2x 116 A VRRM = 800-1800 V 1 1B io1B /

7803 3V 1A positive voltage regulator

Abstract: 20 qfn 3x3 datasheet for 4x4 keyboard F QFN 3X3 LTC3452 LTC3524 QFN-56 5x9 50w LED driver sw 2604 ic ic sw 2604
Contextual Info: VOL 2 Power Management for LEDs High Performance Analog ICs 04109 CS3_LIN_LED_FA_10–7–08.r2.indd 2 10/24/08 3:43:50 PM LEDs and LED Driver Technology LEDs A light-emitting diode LED is a semiconductor device that emits narrow-spectrum incoherent light when forward-biased.

fmlg12

Abstract: RB40 N
Contextual Info: 3SE D SANKEN ELECTRIC CO LTD Rectifier Diodes i. 7^07m 0DGG7*ì3 fl tm S A K J ~ fiO i-*0\ EVrm:* 0~ 1500V EIo:0.5~ 3.0A S F P M /A M /E M /R M /R O A b s o lu te M a x im u m R a tin g s R a tin g / Vrm V) lo (A) Ifsm (A) Tj CC) Tstg CC) 50Hz Half Sine

Contextual Info: • TW O A N D THREE PORT RF PIN SW ITCH MODULES This series of SP2T and SP3T RF switches uses high voltage PIN and NIP diodes, from the EH 80000 and EH 89000 families, to achieve very low loss and distortion. Theses switches can be used from 1.5 to 1000 MHz, and can handle power levels up to 1000 W.

7803 3V 1A positive voltage regulator

Abstract: 4x5 led display 12V, 350mA LED driver LT3476 LTC3454 sw 2604 ic datasheet for 4x4 keyboard 03 07 qfn 3x3 F QFN 3X3 LT3755
Contextual Info: VOL 2 Power Management for LEDs High Performance Analog ICs 04109 CS3_LIN_LED_FA_10–7–08.r2.indd 2 10/21/08 12:52:45 PM LEDs and LED Driver Technology LEDs A light-emitting diode LED is a semiconductor device that emits narrow-spectrum incoherent light when forward-biased.

D 92 M - 02 DIODE

Abstract: c 92 M - 02 DIODE ym oca
Contextual Info: 5 /a s /h = * P - A 'U T ' Ç 'C X — YSchottky Barrier Diode OUTLINE DIMENSIONS DE5SC6M Package I E Ky9 VW-U><7J\°-yK 0 # # /1 Standard soldering pad 60V 5A * « : ±0.1 Tolerance: ±0.1 D ® •S M D • P rrsm T’y ^'5 5.2 ±0-2 i ffill •im-xmzamm

BYQ28X-200

Abstract: BYQ28X200 BYQ28X TH92 BYQ28X-200,127
Contextual Info: BYQ28X-200 Dual ultrafast rugged rectifier diode Rev. 02 — 5 February 2009 Product data sheet 1. Product profile 1.1 General description Dual ultrafast epitaxial rectifier diodes in a SOT186A TO-220F isolated plastic package. 1.2 Features and benefits

Contextual Info: BYQ28X-200 Dual ultrafast rugged rectifier diode Rev. 02 — 5 February 2009 Product data sheet 1. Product profile 1.1 General description Dual ultrafast epitaxial rectifier diodes in a SOT186A TO-220F isolated plastic package. 1.2 Features and benefits