BC547 sot package sot-23
Abstract: BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package
Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the
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MDC5000T1
MDC5001T1
MDC3105LT1
BC547 sot package sot-23
BC337 BC547
2N2484 motorola
MSB81T1
zt751
pin configuration NPN transistor BC547 sot-23
MMBF4856
SOT-223 P1f
P1F motorola
2N2222A plastic package
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BC337 BC547
Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the
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MDC5000T1
MDC3105LT1
BC337 BC547
MSB81T1
MBT3904DW9T1
marking 6AA SOD
MVAM115
automatic stabilizer circuit diagram range 210 to 250 volts
zt751
MBT3904DW9
transistor 2N4125
CT BC547 TRANSISTOR PIN DIAGRAM
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FZ400R17KE3
Abstract: No abstract text available
Text: Technische Information / technical information FZ400R17KE3 IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Feldstop IGBT³ und EmCon³ Diode 62mm C-series module with trench/fieldstop IGBT³ and EmCon³ diode IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten / preliminary data
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FZ400R17KE3
FZ400R17KE3
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DO-205AB
Abstract: No abstract text available
Text: Bulletin I2029 rev. A 02/02 240U R . SERIES STANDARD RECOVERY DIODES Stud Version Features Diffused diode Wide current range 320A High voltage ratings up to 1200V High surge current capabilities Stud cathode and stud anode version Hermetic metal case Typical Applications
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I2029
DO-205AB
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MMBF4856
Abstract: pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA
Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the
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226AA)
226AE)
MMSD1000T1
236AB
MMBF0201NLT1
MMBF0202PLT1
MMBF4856
pin configuration NPN transistor BC547 sot-23
BC337/BC327
BC547 sot package sot-23
t6661
bipolar transistor bc107
MPS6595
zt751
FET Transistor Guide
BS107 MOTOROLA
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68W SOT
Abstract: ultra low noise 12GHz 64W SOT23 AUs SOT363 BAS 40-04 Infineon BAS 68-04 BAT 43 - 46 - 85 - 86 61 SIEMENS DIODE BAT 19 SOT143 DUAL DIODE
Text: Small CHIPS for big visions Schottky Diodes h t t p : / / w w w. i n f i n e o n . c o m Never stop thinking. max. max. typ typ t ion lica V R=0 V CT UF ( typ App ) IF = 10 m A ) IF = 1m A UF ( IF Sin gle Dua l iso lat e Dua d l se ries Dua l co m. Cat Dua
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B132-H7456-GI-X-7600
68W SOT
ultra low noise 12GHz
64W SOT23
AUs SOT363
BAS 40-04 Infineon
BAS 68-04
BAT 43 - 46 - 85 - 86
61 SIEMENS
DIODE BAT 19
SOT143 DUAL DIODE
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DO-205AB
Abstract: No abstract text available
Text: Bulletin I2029 rev. B 07/02 240U R . SERIES STANDARD RECOVERY DIODES Stud Version Features Diffused diode Wide current range 320A High voltage ratings up to 1200V High surge current capabilities Stud cathode and stud anode version Hermetic metal case Typical Applications
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I2029
DO-205AB
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Untitled
Abstract: No abstract text available
Text: SKMT 92, SKKL 92 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 1 Thyristor / Diode Modules NOGL NOOL= NJOL N VTT SATT SBTT S¥TT N WTT SCTT S[TT S@TT QMDN R VB D F*2 > SWTX M5 R WB YEI GHLM VCZTW? GHH; VCZSC? GHLM VCZS[? GHLM VCZS@? GHH; VCZS@? SVTT SWTT GHLM VCZSW?
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IXYS MCC 95-12 io8B
Abstract: IXYS MCD 95-08 io8b ixys mcc 132 12 IXYS MCd 95-12 IO8B
Text: MCC 95 MCD 95 ITRMS = 2x 180 A 2x 116 A ITAVM = VRRM = 800-1800 V Thyristor Modules Thyristor/Diode Modules 3 VRSM VDSM VRRM VDRM Type V 900 1300 1500 1700 1900 V 800 1200 1400 1600 1800 Version MCC 95-08 MCC 95-12 MCC 95-14 MCC 95-16 MCC 95-18 Symbol 1B io1B /
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20101116a
IXYS MCC 95-12 io8B
IXYS MCD 95-08 io8b
ixys mcc 132 12
IXYS MCd 95-12 IO8B
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io1B
Abstract: io8B IXYS MCD 95-16 IO8B mcc95 16 101 IXYS MCC 95-12 IXYS MCD 95-08 io8b IXYS MCd 95-12 thyristor module IXYS MCD 95-08 THYRISTOR 9508 DIN ISO 2768 screw
Text: MCC 95 MCD 95 Thyristor Modules Thyristor/Diode Modules VRSM VDSM VRRM VDRM Type V 900 1300 1500 1700 1900 V 800 1200 1400 1600 1800 Version MCC 95-08 MCC 95-12 MCC 95-14 MCC 95-16 MCC 95-18 Symbol ITRMS = 2x 180 A ITAVM = 2x 116 A VRRM = 800-1800 V 1 1B io1B /
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00-1800V
20101116a
io1B
io8B
IXYS MCD 95-16 IO8B
mcc95 16 101
IXYS MCC 95-12
IXYS MCD 95-08 io8b
IXYS MCd 95-12
thyristor module IXYS MCD 95-08
THYRISTOR 9508
DIN ISO 2768 screw
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7803 3V 1A positive voltage regulator
Abstract: 20 qfn 3x3 datasheet for 4x4 keyboard F QFN 3X3 LTC3452 LTC3524 QFN-56 5x9 50w LED driver sw 2604 ic ic sw 2604
Text: VOL 2 Power Management for LEDs High Performance Analog ICs 04109 CS3_LIN_LED_FA_10–7–08.r2.indd 2 10/24/08 3:43:50 PM LEDs and LED Driver Technology LEDs A light-emitting diode LED is a semiconductor device that emits narrow-spectrum incoherent light when forward-biased.
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1-800-4-LINEAR
LW100815KU
7803 3V 1A positive voltage regulator
20 qfn 3x3
datasheet for 4x4 keyboard
F QFN 3X3
LTC3452
LTC3524
QFN-56 5x9
50w LED driver
sw 2604 ic
ic sw 2604
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7803 3V 1A positive voltage regulator
Abstract: 4x5 led display 12V, 350mA LED driver LT3476 LTC3454 sw 2604 ic datasheet for 4x4 keyboard 03 07 qfn 3x3 F QFN 3X3 LT3755
Text: VOL 2 Power Management for LEDs High Performance Analog ICs 04109 CS3_LIN_LED_FA_10–7–08.r2.indd 2 10/21/08 12:52:45 PM LEDs and LED Driver Technology LEDs A light-emitting diode LED is a semiconductor device that emits narrow-spectrum incoherent light when forward-biased.
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1-800-4-LINEAR
LW100815KU
7803 3V 1A positive voltage regulator
4x5 led display
12V, 350mA LED driver
LT3476
LTC3454
sw 2604 ic
datasheet for 4x4 keyboard
03 07 qfn 3x3
F QFN 3X3
LT3755
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BYQ28X-200
Abstract: BYQ28X200 BYQ28X TH92 BYQ28X-200,127
Text: BYQ28X-200 Dual ultrafast rugged rectifier diode Rev. 02 — 5 February 2009 Product data sheet 1. Product profile 1.1 General description Dual ultrafast epitaxial rectifier diodes in a SOT186A TO-220F isolated plastic package. 1.2 Features and benefits
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BYQ28X-200
OT186A
O-220F)
BYQ28X-200
BYQ28X200
BYQ28X
TH92
BYQ28X-200,127
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Untitled
Abstract: No abstract text available
Text: BYQ28X-200 Dual ultrafast rugged rectifier diode Rev. 02 — 5 February 2009 Product data sheet 1. Product profile 1.1 General description Dual ultrafast epitaxial rectifier diodes in a SOT186A TO-220F isolated plastic package. 1.2 Features and benefits
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BYQ28X-200
OT186A
O-220F)
BYQ28X-200
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MBD501
Abstract: No abstract text available
Text: R3S725S ~ÉH M O TO RO LA SC 89D < 0 IO D E S /O P T O T“-o*7-o'l 77456 DE I t,3ti7SSS 007745b T J~~ Hot-Carrier Schottky) Diodes CASE 318-02 (TO-236AA) Standard CASE 182-02 (TO-226AC) TO-92 Hot-Carrier diodes are ideal for VHF and UHF mixer and detector applications as well as many higher frequency
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R3S725S
007745b
O-236AA)
O-226AC)
MMBD201
MBD301
MMBD301
MBD501
MMBD501
MBD701
MBD501
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Untitled
Abstract: No abstract text available
Text: 7294621 POWEREX INC Dim A B C D E F G H I J K L M N O P Q bg Inches 3.62*.02 3.15 .24 .22 1.38 ±.02 .28 .83 .709 .335 1.02 .394 .807 .531 .472 1.181 .758 .118 1 F| 7ET4t,21 PDDDTBfi S |~_D f T-33-2 Metric 92 ±0.4 80 6 5.5 35 ±.4 7 21 18 8.5 26 10 20.5 13.5
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T-33-2
KB72450210
KB72450
KB72450210
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Untitled
Abstract: No abstract text available
Text: Schottky-Barrier Diodes Dual package Ratings and characteristics Maximum rating Vrrm lo *1 TS802C06 TS802C09 TP802C04 TP802C06 TP802C09 ESAC82-004 ESAC82M-004 O II CO ^1 5.0 Mass Grams Fig. No. Irrm * 3 Max. mA Dimensions -40 t o +125 0.55 If=2.5A 5.0 0.6
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TS802C06
TS802C09
TP802C04
TP802C06
TP802C09
ESAC82-004
ESAC82M-004
O-22QF15
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ESAB82-004
Abstract: ESAB82M-004 ESAB82M-006 ESAB85-009 KP823C04 KS823C04 TP801C04 TP801C06 YG801C04 YG801C06
Text: Schottky-Barrier Diodes Dual package Ratings and characteristics Type M axim um ratin§ V lo rrm Volts KS823C04 40 KP823C04 40 40 If s h # 2 *1 Am ps. Am ps. 5.0 Tc=87°C 5.0 Tc=87°C) 5.0 Tc=103°C) Therm al rating Tj and Tstg °c -40 t o +125 Characteristics Ta=25°C)
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KS823C04
KP823C04
TP801C04
TP801C06
ESAB82-004
ESAB82M-004
ESAB82M-006
O-220
O-22QAB
O-22QF17
ESAB85-009
YG801C04
YG801C06
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Untitled
Abstract: No abstract text available
Text: SEMIKRON Vrsm V rrm dv/ V Ita v (sin. 180; Tease = 85 °C 95 A V/|!S V SEMI PACK 1 Thyristor/ Diode Modules Itrms (maximum value for continuous operation) 150 A V drm dt)cr _ - SKKH 91/04 D - SKKH 91/06 D SKKH 92/06 D 500 SKKT 91/08 D SKKT 92/08 D1) SKKH 91/08 D
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SKKT92B
SKMT912)
13bb71
KT09110
B1-58
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RG4 DIODE
Abstract: 1N5821 MCB843 b35 DIODE schottky marking JB SCHOTTKY BARRIER DIODE 1N5820 1N5822 IEC134 MCB841
Text: SbE D • 7 1 1 D fi2 b r ilill J 9 UC1IHWVIIUUVIVI9 O lim c m i 7 T T ■ P H IN 11 T Controlled avalanche Schottky barrier diodes P H I L I P S IN T E R N A T IO N A L D E S C R IP T IO N Schottky barrier diodes in herm etically se aled S O D 8 4 A Implosion Diode ID ) envelope,
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1N5820ID/21ID/22ID
OD84A
1N5820
1N5821
1N5822
711002b
RG4 DIODE
MCB843
b35 DIODE schottky
marking JB SCHOTTKY BARRIER DIODE
IEC134
MCB841
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DWEP
Abstract: No abstract text available
Text: Fast Recovery Epitaxial Diodes FRED Chips VRRM min Type mA u TJ= 12S-C v .-w v * , mA DWEP 27 -02 DWEP 37 -02 DWEP 77 -02 200 100 150 500 0.2 0,35 0.65 5 11 20 54 91 244 85 70 70 DWEP DWEP DWEP DWEP DWEP DWEP DWEP DWEP 8 12 15 23 25 35 55 75 -06 -06 -06 -06
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12S-C
DWEP
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fmlg12
Abstract: RB40 N
Text: 3SE D SANKEN ELECTRIC CO LTD Rectifier Diodes i. 7^07m 0DGG7*ì3 fl tm S A K J ~ fiO i-*0\ EVrm:* 0~ 1500V EIo:0.5~ 3.0A S F P M /A M /E M /R M /R O A b s o lu te M a x im u m R a tin g s R a tin g / Vrm V) lo (A) Ifsm (A) Tj CC) Tstg CC) 50Hz Half Sine
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SFPM-52
SFPM-54
SFPM-62
SFPM-64
AM01Z
AM01A
EM01Z
EM01A
RB601
RB602
fmlg12
RB40 N
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Untitled
Abstract: No abstract text available
Text: • TW O A N D THREE PORT RF PIN SW ITCH MODULES This series of SP2T and SP3T RF switches uses high voltage PIN and NIP diodes, from the EH 80000 and EH 89000 families, to achieve very low loss and distortion. Theses switches can be used from 1.5 to 1000 MHz, and can handle power levels up to 1000 W.
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ondition400
00004b3
T0037Ã
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D 92 M - 02 DIODE
Abstract: c 92 M - 02 DIODE ym oca
Text: 5 /a s /h = * P - A 'U T ' Ç 'C X — YSchottky Barrier Diode OUTLINE DIMENSIONS DE5SC6M Package I E Ky9 VW-U><7J\°-yK 0 # # /1 Standard soldering pad 60V 5A * « : ±0.1 Tolerance: ±0.1 D ® •S M D • P rrsm T’y ^'5 5.2 ±0-2 i ffill •im-xmzamm
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65-as
50HziEilO
J515-5
D 92 M - 02 DIODE
c 92 M - 02 DIODE
ym oca
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