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    D MARKING CODE DPAK TRANSISTOR Search Results

    D MARKING CODE DPAK TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK6R9P08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
    TK5R1P08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 84 A, 0.0051 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    D MARKING CODE DPAK TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D408

    Abstract: D408 transistor d408 be transistor d408 diode d408 TRANSISTOR aoD408 AOD408L
    Text: AOD408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD408 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOD408 is Pbfree (meets ROHS & Sony 259 specifications).


    Original     		PDF AOD408 AOD408 AOD408L O-252 PD-00085 D408 D408 transistor d408 be transistor d408 diode d408 TRANSISTOR aoD408

    d436

    Abstract: d436 transistor transistor d436
    Text: AOD436 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD436 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion.


    Original     		PDF AOD436 AOD436 AOD436L O-252 PD-00148 d436 d436 transistor transistor d436

    J-STD-020D

    Abstract: MJD340
    Text: MJD340 HIGH VOLTAGE NPN SURFACE MOUNT TRANSISTOR NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction High Collector-EmitterVoltage Ideally Suited for Automated Assembly Processes


    Original     		PDF MJD340 J-STD-020D MIL-STD-202, DS31609 J-STD-020D MJD340

    Untitled

    Abstract: No abstract text available
    Text: MJD340 N EW PRODU CT HIGH VOLTAGE NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction High Collector-EmitterVoltage Ideally Suited for Automated Assembly Processes Ideal for Power Switching or Amplification Applications


    Original     		PDF MJD340 J-STD-020D MIL-STD-202, DS31609

    Untitled

    Abstract: No abstract text available
    Text: MJD350 N EW PRODU CT HIGH VOLTAGE PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction High Collector-EmitterVoltage Ideally Suited for Automated Assembly Processes Ideal for Power Switching or Amplification Applications


    Original     		PDF MJD350 J-STD-020D MIL-STD-202, DS31608

    J-STD-020D

    Abstract: MJD350
    Text: MJD350 HIGH VOLTAGE PNP SURFACE MOUNT TRANSISTOR NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction High Collector-EmitterVoltage Ideally Suited for Automated Assembly Processes


    Original     		PDF MJD350 J-STD-020D MIL-STD-202, DS31608 J-STD-020D MJD350

    J-STD-020D

    Abstract: No abstract text available
    Text: 2DB1184Q PNP SURFACE MOUNT TRANSISTOR NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Voltage Ideally Suited for Automated Assembly Processes


    Original     		PDF 2DB1184Q J-STD-020D MIL-STD-202, DS31504 J-STD-020D

    1N60C

    Abstract: FAIRCHILD FQD DPAK DPAK-2 PACKAGE PSPICE Orcad 1n60 FQD1N60CTM
    Text: FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD1N60C FQU1N60C O-252 FQD1N60CTF FQD1N60CTM 1N60C FAIRCHILD FQD DPAK DPAK-2 PACKAGE PSPICE Orcad 1n60

    d marking code dpak transistor

    Abstract: No abstract text available
    Text: Central" CJD41C NPN CJD42C PNP semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD41C, CJD42C types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface mount package


    OCR Scan     		PDF CJD41C CJD42C CJD41C, 26-September d marking code dpak transistor

    CJD3055

    Abstract: d marking code dpak transistor PNP Silicon Power Transistor DPAK
    Text: Central CJD2955 NPN CJD3055 PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD2955, CJD3055 types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface mount pack­


    OCR Scan     		PDF CJD2955 CJD3055 CJD2955, 26-September d marking code dpak transistor PNP Silicon Power Transistor DPAK

    transistor j 127

    Abstract: d marking code dpak transistor TRANSISTOR 841 transistor A 673 transistor 30 j 127 TRansistor A 950 Transistor marking code K DPAK marking code 300 Transistor 0235 D
    Text: Central" CJD340 NPN CJD350 PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD340, CJD350 types are Complementary Silicon Power Transistors manufactured in a surface mount package designed for high voltage general pur­


    OCR Scan     		PDF CJD340 CJD350 CJD340, UNITSCJD350, CP310 CP710 26-September transistor j 127 d marking code dpak transistor TRANSISTOR 841 transistor A 673 transistor 30 j 127 TRansistor A 950 Transistor marking code K DPAK marking code 300 Transistor 0235 D

    d marking code dpak transistor

    Abstract: LB 127 transistor
    Text: Central" CJD200 NPN CJD210 PNP semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL S EM IC O N D U C TO R CJD200, CJD210 types are Complementary Silicon Power Transistors manufactured in a surface mount package designed for high current amplifier appli­


    OCR Scan     		PDF CJD200 CJD210 CJD200, 26-August d marking code dpak transistor LB 127 transistor

    C 828 Transistor

    Abstract: B 828 transistor transistor c 828 transistor 828 d marking code dpak transistor C 828 Transistor NPN LC marking code transistor
    Text: Central CJD44H11 NPN CJD45H11 PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD44H11, CJD45H11 types are Complementary Silicon Power Transistors manufactured in a surface mount package designed for switching and power


    OCR Scan     		PDF CJD44H11 CJD45H11 CJD44H11, CP219 26-September C 828 Transistor B 828 transistor transistor c 828 transistor 828 d marking code dpak transistor C 828 Transistor NPN LC marking code transistor

    Transistor D 799

    Abstract: Transistor K 799 d marking code dpak transistor transistor j 127
    Text: Central" CJD47 CJD50 Semiconductor Corp. NPN SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEM IC O N D U C TO R CJD47, CJD50 types are NPN Silicon Power Transistors manufactured in a surface mount package designed for high voltage applications such as


    OCR Scan     		PDF CJD47 CJD50 CJD47, CP319, 26-August 26-August Transistor D 799 Transistor K 799 d marking code dpak transistor transistor j 127

    CJD3055

    Abstract: No abstract text available
    Text: Central" CJD2955 NPN CJD3055 PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD2955, CJD3055 types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface mount pack­


    OCR Scan     		PDF CJD2955 CJD3055 CJD2955, 26-September

    transistor marking code AL

    Abstract: TRANSISTOR marking code 432 AL 102 pnp transistor A 673 transistor DPAK marking code 300
    Text: Central" CJD340 NPN CJD350 PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD340, CJD350 types are Complementary Silicon Power Transistors manufactured in a surface mount package designed for high voltage general pur­


    OCR Scan     		PDF CJD340 CJD350 CJD340, 26-September transistor marking code AL TRANSISTOR marking code 432 AL 102 pnp transistor A 673 transistor DPAK marking code 300

    d marking code dpak transistor

    Abstract: 147 B transistor
    Text: Central" CJD122 NPN CJD127 PNP semiconductor Corp. COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL S EM IC O N D U C TO R CJD122, CJD127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low speed switching


    OCR Scan     		PDF CJD122 CJD127 CJD122, 26-September d marking code dpak transistor 147 B transistor

    d marking code dpak transistor

    Abstract: No abstract text available
    Text: Centrar CJD47 CJD50 Semiconductor Corp. NPN SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD47, CJD50 types are NPN Silicon Power Transistors manufactured in a surface mount package designed for high voltage applications such as power supplies and other switching applications.


    OCR Scan     		PDF CJD47 CJD50 CJD47, CP319 26-August d marking code dpak transistor

    transistor k 826

    Abstract: TRANSISTOR marking code 432
    Text: Central CJD41CNPN CJD42C PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DPÀK1! DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD41C, CJD42C types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface mount package


    OCR Scan     		PDF CJD41CNPN CJD42C CJD41C, 26-September transistor k 826 TRANSISTOR marking code 432

    transistor c 144

    Abstract: transistor tc 144
    Text: Central CJD112 NPN CJD117 PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD112, CJD117 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low speed switching


    OCR Scan     		PDF CJD112 CJD117 CJD112, 26-August 26-August transistor c 144 transistor tc 144

    Untitled

    Abstract: No abstract text available
    Text: Central CJD13003 Semiconductor Corp. NPN SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEM ICONDUCTOR CJD13003 type is an NPN Silicon Power Transistor manu­ factured in a surface mount package designed for high voltage, high speed power switching induc­


    OCR Scan     		PDF CJD13003 26-August

    TRANSISTOR C 608

    Abstract: No abstract text available
    Text: Central" CJD31C NPN CJD32C PNP Sem iconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEM IC O N DU CTO R CJD31C, CJD32C types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface mount package


    OCR Scan     		PDF CJD31C CJD32C CJD31C, 26-September TRANSISTOR C 608

    cq 622

    Abstract: CP314
    Text: Central" CJD200 NPN CJD210PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD200, CJD210 types are Complementary Silicon Power Transistors manufactured in a surface mount package designed for high current amplifier appli­


    OCR Scan     		PDF CJD200 CJD210PNP CJD200, CJD210 CP714 26-AuguSt cq 622 CP314

    marking code nt amplifier

    Abstract: D 823 transistor
    Text: Central" CJD31C NPN CJD32C PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DRÂKI! DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD31C, CJD32C types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface mount package


    OCR Scan     		PDF CJD31C CJD32C CJD31C, 26-September marking code nt amplifier D 823 transistor