D035 EQUIVALENT Search Results

SS321 equivalent

Abstract: DIODE 1N9148 1N4307 1N4532 DIODE 1N3605 SE708 2N2222 chip 2N2369 transistor DZ800 MA1703
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Continued U @ 25°C BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf Max. Max. @ Vr(V) 30 20 100 Co @ OV @ lF(mA) (V) 1.00 1.00 (pif) (nsec) Package Type trr Package Outline No. Specification Sheet No. 50 2 4

JANTX 1N916

Abstract: diode 1n4446 DA-Series 1n4148 D035 1N4532 1N916 JANTX general electric 1n4727 1N4148.1N4448 1N4148 1N4151
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES P a rt N u m b e r BV @ 100/1A M in . V I r @ 2 5 ° C M a x. (ri A ) @ V r (V) V f (V ) M a x. @ I f (m A ) Co @ DV (pf) 1N914 100 25 30 1.00 10 4 1N 914A 100 25 20 1.00 20 4 1N914B 100 25 20 1.00 100 1N916 100 25 20

in4447

Abstract: IN4446 in4449 DIODe IN4446 1n914 equivalent IN4I48 in4448 IN4305 1N4148 1N4149
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Part N u m b e r BV @ 100/1A M in . V I r @ 2 5 ° C M ax. (ri A ) @ V r (V ) V f (V ) M ax. @ I f (m A ) Co @ DV (pf) 1N 914 100 25 30 1.00 10 4 1N 914A 100 25 20 1.00 20 4 1N 914B 100 25 20 1.00 100 1N 916 100 25 20

DIODe IN4446

Abstract: in4447 in4449 IN4I48 1n914 equivalent in4448 JANTX 1N916 1n916 equivalent IN4446 1N916 JANTX
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Part N u m b e r BV @ 100/1A M in . V I r @ 2 5 ° C M ax. (ri A ) @ V r (V ) V f (V ) M ax. @ I f (m A ) Co @ DV (pf) 1N 914 100 25 30 1.00 10 4 1N 914A 100 25 20 1.00 20 4 1N 914B 100 25 20 1.00 100 1N 916 100 25 20

in4151

Abstract: 1N4532 1N4148 1N4149 1N4151 1N4152 1N914 1N914A 1N914B 1N916
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Part Number 1N914 1N 914A 1N 914B BV @ 100/1A Min. V I r @ 2 5 °C Max. (ri A) @ V r (V ) V f Max. (V ) @ I f (m A ) Co @ DV (pf) trr (77S E C ) Package Outline Package Outline Number 100 100 25 30 1.00 10 4 25 20 1.00

in4606

Abstract: IN4150 1N4606 1N4150 1N4450 1N4607 1N460B D035 DT230C DT230H
Contextual Info: SIGNAL DIODES 100 - 200 M A TYPES 200 - 400 M A TYPES @ Part Number Ir BV 1OOü A Min. V 1N4451 40 1N4607 85 Vf @ 25°C Max. <nA) 1 Max. @ V r (V) (V) @ Ir(mA) Co @ OV (pf) trr Package T»pe (nsec) 50 30 1.00 300 6 10 100 50 1.00 400 4 10 1 Package Outline No.

DIODO 1N4148

Abstract: diodo 1N914 1N4532 2 935 diodo in4727 1N4727 1N4148 1N4149 DZ806 1N4152
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Part Number 1N 914 1N 914A 1N 9 1 4 B BV @ 100/1A Min. V I r @ 25°C Max. (ri A) @ V r (V) V f Max. (V) @ I f (m A) Co @ DV (pf) trr (77S E C ) Package Outline Package Outline Num ber 100 100 25 30 1.00 10 4 25 20 1.00

BAT85 equivalent

Abstract: db25m pinout 2N3906 Equivalent BC 2N3906 Motorola 2n3906 equivalent transistor cfr-25jb-4k7 Belden STP MC5207 transistor 2S D 716 Yageo zor datasheet
Contextual Info: MIC384 Evaluation Board and DemoWare Software Micrel MIC384 Evaluation Board DemoWare Software • 3.3V, 100mA regulated power supply • Power supply leads or cables • SMBus™/I2C™ compatible serial bus host for communication with the MIC384 • Cable for serial host connection, as appropriate

2N3906 MOTOROLA

Abstract: MC5207 Yageo zor 2n3906 equivalent transistor datasheet connector DB25m db25m pinout 2N3906 Equivalent BC transistor 2S D 716 ZOR-25-B CFR-25JB-100R
Contextual Info: MIC284 Evaluation Board and DemoWare Software Micrel MIC284 Evaluation Board DemoWare Software • 3.3V, 100mA regulated power supply • Power supply leads or cables • SMBus™/I2C™ compatible serial bus host for communication with the MIC284 • Cable for serial host connection, as appropriate

linear ptc thermistors 0805

Abstract: PTC Thermistor thermistor ptc thermistors 0805 mil-prf-23648 RTH42 QTM12 23648 diodes in mil grade D035
Contextual Info: PTC THERMISTORS DIRECTORY Catalog Page Description Part Series 22 EIA standard package Surface Mount Thermistor QT0805 1%, 2%, 5%, 10% M32192/2 Linear 7,000 ppm/°C temperature coefficient Board level temperature compensation 23 Wire bondable hybrid package

KF520

Abstract: KT725 diac kr 206 KT707 KD502 kt201 KT206-200 KU607 KYS 30 40 diode KT784
Contextual Info: TESLA ECIMEX, a. s. T E /1 \L /I Sem iconductor Discrete Devices Sem iconductor Discrete Devices CONTENTS . 3 TRANSISTORS. 5

Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 08 October 1999. INCH-POUND MIL-PRF-19500/127N 09 July 1999 SUPERSEDING MIL-S-19500/127M 14 March 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR,

Contextual Info: Zener Voltage Regulator Series 1N6321 thru 1N6349 Features • JAN, JANTX, JANTXV and JANS available per MIL-PRF-19500/533 • Voidless hermetically sealed glass package • Triple-layer passivation • Internal "Category I” Metallurgical bonds for 1N6320

1N746A-1

Abstract: 452 regulator JANHCB1N752
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 23 August 2006. INCH-POUND MIL-PRF-19500/127T 23 May 2006 SUPERSEDING MIL-PRF-19500/127R 19 August 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR,

AO2020

Contextual Info: DRAM MODULE 32 Mega Byte KMM5368000AH Fast Page Mode 8Mx36 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM5360OOOAH is a 0M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5368000AH consists of eighteen

mil-s-19500 qpl jantx1n5518b

Abstract: 1N5521B JANTXV MIL-prf-19500/437 1N5518B-1 1N5518BUR-1 1N5518C-1 1N5518CUR-1 1N5518D-1 1N5518DUR-1 1N5546B-1
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 December 1997 INCH POUND MIL-PRF-19500/437D 15 September 1997 SUPERSEDING MIL-S-19500/437C 20 December 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR TYPES,

D032

Contextual Info: DENSE-PAC MICROSYSTEMS 640 Megabit C M O S D R A M DPD16MS40PKW5 PRELIMINARY D E S C R IP T IO N : The D PD 16M S40PKW 5 is the 16 Meg x 40 Dynamic R A M module in the family of S o p e rS / M M modules that utilize the new and innovative space saving TSOP

melf ZENER diode COLOR BAND

Abstract: MIL-prf-19500/437 437H 1N5521B JANTXV 1N5531B JANTXV 1N5518B-1 1N5518BUR-1 1N5518C-1 fsc do-35 physical dimensions 1N5518D-1
Contextual Info: INCH-POUND MIL-PRF-19500/437H 25 March 2008 SUPERSEDING MIL-PRF-19500/437G 12 July 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR, TYPES 1N5518B-1, 1N5518C-1, 1N5518D-1 THROUGH 1N5546B-1, 1N5546C-1, 1N5546D-1, 1N5518BUR-1,

Contextual Info: DENSE-PAC 1280 Megabit CMOS DRAM MICROSYSTEMS DPD32MS40PKW5 PRELIMINARY D ESCRIPTIO N : The DPD32MS40PKW5 is the 32 Meg x 40 Dynamic RAM module in the family of S u p e r S IM M modules that utilize the new and innovative space saving TSOP stacking technology. The module is constructed of twentyfour dynamic RAM stacks,

Contextual Info: SIEMENS 4M x 36-Bit Dynamic RAM Module HYM 364020S/GS-60/-70 Advanced Inform ation • 4 194 304 words by 36-Bit organization alternative 8 388 608 w ords by 18-bit • Fast access and cycle tim e 60 ns access time 110 ns cycle tim e (-60 version) 70 ns access tim e

131-6 wj 71

Abstract: 131-6 wj 66 131-6 wj 70 A0-A11I DQ91
Contextual Info: DRAM MODULE 32 Mega Byte KMM5368003AK/AKG Fast Page Mode 8Mx36 DRAM SIMM, 4K Refresh, 5V Using 16M Quad CAS DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES • Performance Range: The Sam sung KMM5368003AK is a 8M bit x 36 D ynam ic RAM high density m em ory m odule using

km416c1204aj

Abstract: 9-14110 KMM5362205AWG
Contextual Info: DRAM MODULE KMM5362205AW/AWG KMM5362205AW/AWG Fast Page with EDO Mode 2Mx36 DRAM SIMM, 5V, 1K Refresh using 4M Quad CAS EDO DRAM G EN ERA L D ESC RIPTIO N FEATURES The Samsung KMM5362205AW is a 2M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5362205AW consists of four CMOS

KMM5361003C6

Abstract: TAA 780 kmm5361003
Contextual Info: DRAM MODULE / _ 4 Mega Byte KMM5361003C/CG Fast Page Mode / 1Mx36 Quad CAS DRAM SIMM Using Quad CAS DRAM, 5V G EN ERA L D ESCRIPTIO N FEATURES The Samsung KMM5361003C is a 1M bit x 36 Dynamic RAM high density memory mod' e using Parity with 4M Quad CAS DRAM. The Samsung

Q67100-Q645

Abstract: 514400AJ 362120GS-60 362120 2m x 36 362120GS-80
Contextual Info: SIEMENS 2M x 36-Bit Dynamic RAM Module HYM 362120GS-60/-70/-80 Advanced Inform ation • 2 097 152 words by 36-bit organization alternative 4 194 304 words by 18-bit • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time