D0SS Search Results
D0SS Price and Stock
E-Switch Inc PVK4S22D0SSSWITCH SELECTOR 3POS DPDT 2A 24V |
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PVK4S22D0SS | Bulk | 40 |
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PVK4S22D0SS | 33 |
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PVK4S22D0SS | Bulk | 14 Weeks | 40 |
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Vishay Dale D55342K07B10D0SS2THICK FILM RESISTOR 1206 1% |
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D55342K07B10D0SS2 | Reel |
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Vishay Intertechnologies M55342K11B34D0SS6- Tape and Reel (Alt: M55342K11B34D0SS6) |
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M55342K11B34D0SS6 | Reel | 7 Weeks | 300 |
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Vishay Intertechnologies M55342K12B59D0SS2- Tape and Reel (Alt: M55342K12B59D0SS2) |
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M55342K12B59D0SS2 | Reel | 7 Weeks | 500 |
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Vishay Intertechnologies M55342M12B13D0SS6- Tape and Reel (Alt: M55342M12B13D0SS6) |
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M55342M12B13D0SS6 | Reel | 7 Weeks | 300 |
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D0SS Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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BST86
Abstract: TRANSISTOR SMD 2X y TRANSISTOR SMD 2X K smd transistor marking TL transistor smd marking JT smd transistor marking u d
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OCR Scan |
bL53T31 D0SSb57 BST86 0D25bba BST86 TRANSISTOR SMD 2X y TRANSISTOR SMD 2X K smd transistor marking TL transistor smd marking JT smd transistor marking u d | |
MCD288
Abstract: The Diode with Package Outlines 1993 SOT96A 1545A pulse to sinewave convertor DDSS431 TDA1545A TDA1545AT
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OCR Scan |
711Dfl2b 16-bit MCD288 The Diode with Package Outlines 1993 SOT96A 1545A pulse to sinewave convertor DDSS431 TDA1545A TDA1545AT | |
"Video RAM"
Abstract: KM4216V256 KM4216C256
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OCR Scan |
4216C/V256 110ns 130ns 150ns KM4216C256 120mA 110mA 100mA KM4216V256 "Video RAM" | |
P77-P70Contextual Info: Section 14 Electrical Specifications 14.1 Absolute Maximum Ratings Table 14-1 lists the absolute maximum ratings. Table 14-1. Absolute Maximum Ratings Preliminary Item Symbol Rating Unit Supply voltage Vcc -0 .3 to +7.0 V Vpp -0 .3 to +13.5 V Programming voltage |
OCR Scan |
DD557Tb 44Tb2G4 P77-P70 | |
Contextual Info: HN62344B Series 4M 512K x 8-bit Mask ROM • DESCRIPTION The H itachi H N 62344B is a 4-M e g a b it CMOS M ask Programmable Read Only Memory organized as 524,288 x 8-bit. The low power consumption of this device makes it ideal for battery powered, portable systems. In addition, the high density and |
OCR Scan |
HN62344B 62344B 32-pin 32-lead HN62344B) | |
Contextual Info: TOS H IB A UC/UP b4E T> W t TD'ÌTEM'Ì 0QS5fl71 3E3 T O S H IB A TMP91P640 CMOS 8-BIT MICROCONTROLLERS TMP91P640E - 10 / TMP91P640N - 10 /TMP91P640F - 10 1. OUTLINE AND CHARACTERISTICS The TMP91P640 is a system evalution LSI having a built in EPROM or One-Time |
OCR Scan |
0QS5fl71 TMP91P640 TMP91P640E TMP91P640N /TMP91P640F TMP91P640 TMP91C640 TMP90C840A. TMP90C840A | |
philips lcd 15.4 pinout
Abstract: mbus master broadcom switch D14290 lt 8219 CQ 523
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MSC8154 MSC8154RM EL516 philips lcd 15.4 pinout mbus master broadcom switch D14290 lt 8219 CQ 523 | |
KA2418BContextual Info: KA2418B/28B LINEAR INTEGRATED CIRCUIT 8-DIP-300 TELEPHONE TONE RINGER WITH BRIDGE DIODE The KA2418B/28B is a m onolithic integrated circuit telephone tone ringer with bridge diode, when coupled with an appropriate transducer, it replaces the electromechanical bell. This device is |
OCR Scan |
KA2418B/28B 8-DIP-300 KA2418B/28B 100nF 7Tb4142 50Vac A2418B KA2428B 14Kohm) KA2418B | |
Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT M PD4516421,4516821,4516161 16M bit Synchronous DRAM Description The UPD4516421, UPD4516821, uPD 4516161 are high-speed 16 777 2 1 6-bit synchronous dynamic random-access memories, each organized as 2 097 152-word x |
OCR Scan |
PD4516421 UPD4516421, UPD4516821, 152-word 576-word 288-word x16-bit 400-mil 44-pin 400-mil, | |
Contextual Info: ii N AMER PHILIPS/DISCRETE 5SE D • bbS3T3i Qaaasa? i ■ I BYV29F SERIES _ J V 7 ^ 0 2 -1 7 ULTRA FAST-RECOVERY ELECTRICALLY ISOLATED RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in full-pack envelopes, featuring low forward |
OCR Scan |
BYV29F REFERE0032534 T-03-17 00ES535 M1244 | |
dk 2482 h transistor
Abstract: NPN N43 dk 2482 transistor BFG540 N43 n37 transistor Code N43 transistor N43 557 sot143 BFG540 BF 199 transistor
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BFG540; BFG540/X; BFG540/XR OT143 OT143R BFG540 dk 2482 h transistor NPN N43 dk 2482 transistor BFG540 N43 n37 transistor Code N43 transistor N43 557 sot143 BFG540 BF 199 transistor | |
M37204M8
Abstract: EPROM 2532A M37204MC-XXXSP M37204MC M37204EC-XXXSP M37204ECSP 10B716 m37204mcxxxsp M37204M8XXXSP M37204
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OCR Scan |
M37204MC-XXXSP M37204EC-XXXSP, M37204ECSP 64-pin M37204EC-XXXSP M37204ECSP 4194304-BIT M37204M8 EPROM 2532A M37204MC 10B716 m37204mcxxxsp M37204M8XXXSP M37204 | |
JD51
Abstract: z80c30 z85c30
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OCR Scan |
0G25311 Z80C30/Z85C30 Z85C30 Z80C30 JD51 z80c30 z85c30 | |
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT M>D42S16800,4216800,42S17800,4217800 16 M BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION ★ The MPD42S16800, 4216800, 42S17800, 4217800 are 2 097 152 words by 8 bits dynamic CMOS RAMs. These differ in refresh cycle and the //PD42S16800, 42S17800 can execute CAS before RAS self refresh. |
OCR Scan |
D42S16800 42S17800 MPD42S16800, 42S17800, //PD42S16800, 28-pin juPD42S | |
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f423 ph
Abstract: B22K pot F423 LMC60811 B22K design the instrumentation amplifier with bridge lmc6002 LMC6061 LMC6081 LMC6081AIN
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OCR Scan |
LMC6081 TL/H/11423-11 TL/H/11423-13 bS01124 GCH5107 f423 ph B22K pot F423 LMC60811 B22K design the instrumentation amplifier with bridge lmc6002 LMC6061 LMC6081AIN | |
LM27555Contextual Info: N EC MOS INTEGRATED CIRCUIT MC-421000A8,421000A9 SERIES 1 M-WORD BY 8-BIT, 1 M-WORD BY 9-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description T h e M C - 4 2 1 0 0 0 A 8 is a 1 0 4 8 5 7 6 w o r d s b y 8 b its d y n a m ic R A M m o d u le o n w h ic h 2 p ie c e s o f * M D R A M |
OCR Scan |
MC-421000A8 421000A9 bHH752S 0Q55705 MC-421000A8, M30B-100A5-2 ME7525 005570b LM27555 | |
74HCT688B1
Abstract: 74hct688m
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OCR Scan |
M54HCT688 M74HCT688 54/74LS688 M54HC T688F1R 74HCT688M 74HCT688B1R 74HCT688C1R D05S1S5 74HCT688B1 | |
Contextual Info: BCW60A/B/C/D NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Rating Unit Pc 32 32 5 100 350 Tstg 15 0 V V V mA mW °C Symbol Collector-Base Voltage Collector-Emitter Voltage VcBO Emitter-Base Voltage |
OCR Scan |
BCW60A/B/C/D BCW60D | |
Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-424000A32 SERIES 4M -WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The M C-424000A32 series is a 4 194 304 words by 32 bits dynamic RAM module on which 8 pieces of 16M DRAM uPD 4217400 are assembled. |
OCR Scan |
MC-424000A32 32-BIT C-424000A32 110ns 424000A32-60 424000A32-70 LjM27525 00SSti 00SSL0S | |
Contextual Info: NEC MOS INTEGRATED CIRCUIT ¿¿PD42S4800, 424800 4M -BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The iiPD42S4800, 424800 are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption. |
OCR Scan |
PD42S4800, iiPD42S4800, PD42S4800 28-pin | |
K512
Abstract: KRY 112 442 dual band XTS01 2.2 un 1950 adr transport book national semiconductor Broadcom cli debug powerpc pci bridge kry 112 42 KRY 112 75 dual band
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MSC8154E MSC8154ERM EL516 0xCA800 K512 KRY 112 442 dual band XTS01 2.2 un 1950 adr transport book national semiconductor Broadcom cli debug powerpc pci bridge kry 112 42 KRY 112 75 dual band | |
vhdl code for 16 prbs generator
Abstract: MC33780 DBUS MC33780 68HC55 dbus
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MC33780 vhdl code for 16 prbs generator MC33780 DBUS MC33780 68HC55 dbus | |
HM62C3232Contextual Info: HM62C3232 Series Target Spec. 32K x 32 bits Synchronous Fast Static RAM With Burst Counter and Pipelined Data Output Preliminary HITACHI Rev.1 May. 18,1994 Ordering Information Features • Single 33V Power Supply (LVTTL) • Fast Clock Access Times: 8 / 9 / 1 2 ns(max) |
OCR Scan |
HM62C3232 100-Lead | |
Contextual Info: Freescale Semiconductor Advance Information Document Number: MC33780 Rev 4.0, 11/2006 Dual DBUS Master with Differential Drive and Frequency Spreading 33780 The 33780 is a master device for two differential DBUS buses. It contains the logic to interface the buses to a standard serial |
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MC33780 |