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    TT Electronics Power and Hybrid / Semelab Limited D2214UK

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    D2214U Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    D2214UK Semelab Metal Gate RF Silicon FET Original PDF
    D2214UK Semelab GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W - 12.5V - 1GHz SINGLE ENDED Original PDF

    D2214U Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: TetraFET D2214UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 1GHz SINGLE ENDED C B A ! D 2 p ls FEATURES E • SIMPLIFIED AMPLIFIER DESIGN  • SUITABLE FOR BROAD BAND APPLICATIONS H G


    Original
    PDF D2214UK 500MHz

    Untitled

    Abstract: No abstract text available
    Text: TetraFET D2214UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 1GHz SINGLE ENDED C B A ! D 2 p ls FEATURES E • SIMPLIFIED AMPLIFIER DESIGN  • SUITABLE FOR BROAD BAND APPLICATIONS


    Original
    PDF D2214UK 500MHz

    uhf vhf amplifier

    Abstract: D2214UK
    Text: TetraFET D2214UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 1GHz SINGLE ENDED C B A ! D 2 p ls E FEATURES • SIMPLIFIED AMPLIFIER DESIGN  H G • SUITABLE FOR BROAD BAND APPLICATIONS


    Original
    PDF D2214UK 500MHz uhf vhf amplifier D2214UK

    Untitled

    Abstract: No abstract text available
    Text: TetraFET D2214UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 1GHz SINGLE ENDED C B A ! D 2 p ls FEATURES • SIMPLIFIED AMPLIFIER DESIGN E • SUITABLE FOR BROAD BAND APPLICATIONS  G H


    Original
    PDF D2214UK

    D2214UK

    Abstract: No abstract text available
    Text: TetraFET D2214UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 1GHz SINGLE ENDED C B A ! D 2 p ls FEATURES E • SIMPLIFIED AMPLIFIER DESIGN  • SUITABLE FOR BROAD BAND APPLICATIONS


    Original
    PDF D2214UK 500MHz D2214UK

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original
    PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    GNS430

    Abstract: D5014UK D1028UK d5017 D2089 D2207UK D1029UK d2253 d5030 D5003UK
    Text: Images of Garmin's GNS530 and GNS430 courtesy of Garmin Ltd. Copyright 1998-2006: Garmin Ltd. or its subsidiaries. All rights reserved. Technical Excellence Quality and Experience in RF Technology Worldwide RF Sales Representatives Semelab RF MOSFETs are manufactured using a unique silicon


    Original
    PDF GNS530 GNS430 750mW break400 1-200MHz 1-500MHz 1-400MHz D5014UK D1028UK d5017 D2089 D2207UK D1029UK d2253 d5030 D5003UK