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    Abstract: No abstract text available
    Text: TIP41F; 41AF TIP41BF; 41CF SILICON EPITAXIAL POWER TRAN SISTO RS N PN silicon epitaxial power transistors, each in a S O T 186 envelope with an electrically insulated mounting base. PN P complements are T IP 4 2 F , T IP 4 2 A F , T IP 4 2 B F and T IP42C F.


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    PDF TIP41F; TIP41BF; IP42C bS3T31 D34TS4 T1P41F; bb53T31