D3A MARKING Search Results

MARKING D3A

Abstract: Sot-23 MARKING d3a RB400D
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 RB400D Plastic-Encapsulate Diodes SCHOTTKY BARRIER DIODE SOT-23 FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 1. ANODE 2. N, C MARKING: D3A

Contextual Info: SMD Schottky Barrier Diode CDBT0540-G RoHS Device Features SOT-23 -Small surface mount type. 0.119 3.00 0.110(2.80) 3 -Low reverse current and low forward voltage. 0.056(1.40) 0.047(1.20) -High reliability. 1 2 0.006(0.15) 0.083(2.10) Marking: D3A 0.002(0.05)

CDBT0540-G

Contextual Info: SMD Schottky Barrier Diode CDBT0540-G RoHS Device Features SOT-23 0.119 3.00 -Small surface mount type. 0.110(2.80) 3 -Low reverse current and low forward voltage. 0.056(1.40) 0.047(1.20) -High reliability. 1 2 0.006(0.15) 0.083(2.10) Marking: D3A 0.002(0.05)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes RB400D SCHOTTKY BARRIER DIODE SOT-23 FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 1 MARKING: D3A 3 2 Maximum Ratings @Ta=25℃

Contextual Info: ULTRA FAST RECOVERY POWER RECTIFIER 1N5811D3 Variant Options D3A to D3H • DLCC3 - Light Weight Hermetic Ceramic Surface Mount Package is designed as a drop In replacement for “D-5B” / “EMELF” package† • Ultra Fast Reverse Recovery • Switching Power Supply Applications

Contextual Info: SOT-23-3L Plastic-Encapsulate DIODE SOT-23-3L Schottky barrier Diodes + 2. 80¡ À0. 05 1. 60¡ À0. 05 1. 9 0. 95¡ À0. 025 1. 02 FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 0. 35 Marking: D3A 2. 92¡ À0. 05

MARKING D3A

Abstract: RB400D
Contextual Info: SOT-23-3L Schottky barrier Diodes + 2. 80¡ À0. 05 1. 60¡ À0. 05 1. 9 0. 95¡ À0. 025 1. 02 FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 0. 35 Marking: D3A 2. 92¡ À0. 05 RB400D Maximum Ratings and Electrical Characteristics, Single Diode @T A=25℃

MARKING D3A

Abstract: RB400D D3A marking D3A DIODE
Contextual Info: RB400D SOT-23-3L Schottky barrier Diodes + 2. 80¡ À0. 05 1. 60¡ À0. 05 1. 9 0. 95¡ À0. 025 1. 02 FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 0. 35 Marking: D3A 2. 92¡ À0. 05 RB400D Maximum Ratings and Electrical Characteristics, Single Diode @T A=25℃

Contextual Info: Filter connectors •370 inch Solder pin angled with threaded lock, mounting bracket and grounding clip Socket connector Plug connector clip for PCB 0 3.1 ±<n, t = 1.6 mm clip for PCB 0 3.1 t a i , t = 1.6 mm Kat 1 i D3A Kat 1 i D4A g 0.25 A -0.76 B • 0.25

Contextual Info: resistors UR73 current sensing chip resistor EU features • • • • • Very low resistance, high precision reliability Utilization of thick film Low T.C.R. achieved ±100 ppm/°C Marking: Indigo body color with white marking Products with lead-free terminations meet EU RoHS

PART MARKING D0B

Abstract: MARKING d2b marking diode D2B SY100E404 SY100E404JC SY10E404 SY10E404JC SY10E404JZ
Contextual Info: • Differential D and Q ■ Extended 100E VEE range of –4.2V to –5.5V The SY10/100E404 are 4-bit differential AND/NAND devices. The differential operation of these devices make them ideal for pulse shaping applications where duty cycle skew is critical. Special design techniques were

MARKING d2b

Abstract: SY100S318FC SY100S318FCTR SY100S318JC SY100S318JCTR F100K SY100S318 D1C marking
Contextual Info: 5-WIDE 5, 4, 4, 4, 2 OA/OAI GATE Micrel, Inc. SY100S318 SY100S318 DESCRIPTION FEATURES • Max. propagation delay of 800ps ■ IEE min. of –55mA ■ Extended supply voltage option: VEE = –4.2V to –5.5V ■ Voltage and temperature compensation for improved noise immunity

d2b 1

Abstract: marking F24
Contextual Info: TRIPLE 5-INPUT OR/NOR GATE Micrel, Inc. FEATURES SY100S301 SY100S301 DESCRIPTION • Max. propagation delay of 750ps ■ IEE min. of –25mA ■ Industry standard 100K ECL levels ■ Extended supply voltage option: VEE = –4.2V to –5.5V The SY100S301 is an ultra-fast triple 5-input OR/NOR

Contextual Info: 5-WIDE 5, 4, 4, 4, 2 OA/OAI GATE Micrel, Inc. SY100S318 SY100S318 DESCRIPTION FEATURES • Max. propagation delay of 800ps ■ IEE min. of –55mA ■ Extended supply voltage option: VEE = –4.2V to –5.5V ■ Voltage and temperature compensation for improved noise immunity

MARKING d2b

Abstract: F100K SY100S301 SY100S301JC SY100S301JCTR
Contextual Info: TRIPLE 5-INPUT OR/NOR GATE Micrel, Inc. FEATURES SY100S301 SY100S301 DESCRIPTION • Max. propagation delay of 750ps ■ IEE min. of –25mA ■ Industry standard 100K ECL levels ■ Extended supply voltage option: VEE = –4.2V to –5.5V The SY100S301 is an ultra-fast triple 5-input OR/NOR

F100K

Abstract: SY100S317 SY100S317FC SY100S317FCTR SY100S317JC SY100S317JCTR
Contextual Info: TRIPLE 2-WIDE OA/OAI GATE Micrel, Inc. FEATURES SY100S317 SY100S317 DESCRIPTION • Max. propagation delay of 900ps ■ IEE min. of –48mA ■ Extended supply voltage option: VEE = –4.2V to –5.5V ■ Voltage and temperature compensation for improved noise immunity

MICREL marking

Abstract: D3A marking F100K SY100S318 SY100S318JC SY100S318JCTR Marking D1c
Contextual Info: 5-WIDE 5, 4, 4, 4, 2 OA/OAI GATE Micrel, Inc. SY100S318 SY100S318 DESCRIPTION FEATURES • Max. propagation delay of 800ps ■ IEE min. of –55mA ■ Extended supply voltage option: VEE = –4.2V to –5.5V ■ Voltage and temperature compensation for improved noise immunity

D3A transistor

Contextual Info: MC10E404, MC100E404 5 V ECL Quad Differential AND/NAND The MC10E404/100E404 is a 4-bit differential AND/NAND device. The differential operation of the device makes it ideal for pulse shaping applications where duty cycle skew is critical. Special design techniques were incorporated to minimize the skew between the upper

Contextual Info: SiC SCHOTTKY DIODE SML05SC06D3A / SML05SC06D3B • VR max = 600V • IF(avg) = 5A • VF(typ) = 1.5V • DLCC3 Hermetic Ceramic Surface Mount Package Designed as a Drop In Replacement for “D-5B”/ “E-MELF” Package † No Reverse Recovery No Forward Recovery

301 marking code PNP transistor

Abstract: Marking Y1 ROHM D3A transistor marking D3N marking code D3 SC-74
Contextual Info: UMD3N IMD3A Transistor, digitai, dual, NPN and PNP, with 2 resistors Features Dimensions Units : mm available in UMT6 (UM6) and SMT6 (IMD, SC-74) packages UM D3N (UMT6) 2.0±Q,2 package marking: UMD3N and IMD3A; D3 1,3±0.1 I 0.65 package contains a PNP

Contextual Info: MC74HC153A Dual 4-Input Data Selector/Multiplexer High−Performance Silicon−Gate CMOS The MC74HC153 is identical in pinout to the LS153. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs.

marking CODE D2B

Abstract: MARKING CODE D3B EP105 MC10EP105 MC10EP105FA MC10EP105FAR2 D3A transistor D3A marking code
Contextual Info: MC10EP105 Product Preview Quad 2-Input Differential AND/NAND The MC10EP105 is a 2–input differential AND/NAND gate. Each gate is functionally equivalent to a EP05 and LVEL05 devices. With AC performance much faster than the LVEL05 device, the EP105 is ideal for applications requiring the fastest AC performance available.

Contextual Info: MC74HC153A Dual 4-Input Data Selector/Multiplexer High−Performance Silicon−Gate CMOS The MC74HC153 is identical in pinout to the LS153. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs.

EP105

Abstract: MC100EP105 MC10EP105 QFN32 LQFP-32 footprint LQFP32 footprint
Contextual Info: MC10EP105, MC100EP105 3.3V / 5V ECL Quad 2−Input Differential AND/NAND Description The MC10/100EP105 is a quad 2−input differential AND/NAND gate. Each gate is functionally equivalent to the EP05 and LVEL05 devices. With AC performance much faster than the LVEL05 device,