D5764802 Search Results

Contextual Info: E2G1059-18-74 O K I Semiconductor This version: Jul. 1998 MSM5716C50/M SM 5718C50/ M D5764802 16M/18Mb 2M x 8/9 & 64Mb (8M x 8) Concurrent RDRAM DESCRIPTION The 1 6 /1 8 /64-M egabit C oncurrent Ram bus DRAMs (RDRAM ) are extrem ely hi'ghVspeed CMOS DRAMs organized as 2M or 8 M w ords by 8 or 9 bits. They are capable of bursting- linlimi ted

RDRAM SOP

Abstract: rdram clock generator concurrent RDRAM 72 RDRAM concurrent
Contextual Info: E2G1059-28-Y1 O K I Semiconductor M S M 5 7 1 8 C 5 / M P 5 7 Previous version: Jul. 1998 6 4 8 2 ~ 18Mb 2M x 9 & 64Mb (8M x 8) Concurrent RDRAM DESCRIPTION The 18/64-M egabit Concurrent Rambus DRAMs (RDRAM ) are extremely high-speed CMOS DRAMs organized as 2M or 8 M words by 8 or 9 bits. They are capable of bursting unlimited