D82 DIODE Search Results
D82 DIODE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
CUZ30V |
![]() |
Zener Diode, 30 V, USC |
![]() |
||
CUZ24V |
![]() |
Zener Diode, 24 V, USC |
![]() |
||
CUZ36V |
![]() |
Zener Diode, 36 V, USC |
![]() |
||
CUZ20V |
![]() |
Zener Diode, 20 V, USC |
![]() |
||
CEZ6V8 |
![]() |
Zener Diode, 6.8 V, ESC |
![]() |
D82 DIODE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
BSZ520N15NS3
Abstract: marking 6B s4si 6B104 I6025 marking a6b
|
Original |
BSZ520N15NS3 marking 6B s4si 6B104 I6025 marking a6b | |
BAT53
Abstract: BAT 43 Schottky Diodes VF 579 D81 marking MARKING D82 BA579C a3020 BA 30 C Thomson-CSF diodes BAR43C
|
OCR Scan |
1000MHz 120ps 100ps@ BAT53 BAT 43 Schottky Diodes VF 579 D81 marking MARKING D82 BA579C a3020 BA 30 C Thomson-CSF diodes BAR43C | |
rectifier three phase 100a
Abstract: 7272 ME500810 A three-phase bridge rectifier datasheet A three-phase diode bridge rectifier datasheet power circuit of three phase control rectifier 100a diode bridge powerex ME50
|
Original |
ME500810 Amperes/800 rectifier three phase 100a 7272 ME500810 A three-phase bridge rectifier datasheet A three-phase diode bridge rectifier datasheet power circuit of three phase control rectifier 100a diode bridge powerex ME50 | |
Contextual Info: mMÊBŒK Powerex, Inc., 200 H illis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 ME500810 ThiBB-PtlSSB Diode Bridge Modules 100 Amperes/800 Volts Description: Powerex Three-Phase Diode Bridge Modules are designed for use in three-phase bridge applica |
OCR Scan |
ME500810 Amperes/800 ME500810 72T4b21 | |
BZW03
Abstract: D3639 bzwo3
|
OCR Scan |
BZW03/D6V8 BZW03/D7V5 BZW03/D8V2 BZW03/D9V1 BZW03/D10 BZW03/D11 BZW03/D12 BZW03/D13 BZW03/D15 BZW03/D16 BZW03 D3639 bzwo3 | |
bzt03
Abstract: BZT03 27
|
OCR Scan |
BZT03/D6V2 BZT03/D6V8 BZT03/D7V5 BZT03/D8V2 BZT03/D9V1 BZT03/D10 BZT03/D11 BZT03/D12 BZT03/D13 BZT03/D15 bzt03 BZT03 27 | |
dimmer kd22
Abstract: Transistor s41 LC75742E LC75742W SQFP64 KD15 electronic dimmer IC KD-28
|
Original |
EN6142 LC75742E, 5742W LC75742E LC75742W 3151-QFP64E LC75742E] dimmer kd22 Transistor s41 SQFP64 KD15 electronic dimmer IC KD-28 | |
Contextual Info: Ordering number : EN6142 CMOS IC LC75742E, 75742W 1/2 Duty VFD Driver with Key Input Function Overview Package Dimensions The LC75742E and LC75742W are 1/2 duty VFD drivers that can be used for electronic tuning frequency display and other applications under the control of a microcontroller. These products can directly drive VFDs with |
Original |
EN6142 LC75742E, 5742W LC75742E LC75742W 3151-QFP64E LC75742E] | |
Contextual Info: INTERNATIONAL RECTIFIER bSE D • i»fl5S452 OGlTllfl MIT ■ INR PD-2.047C bitemational S Rectifier 80SQ. SERIES SCHOTTKY RECTIFIER 8 Amp Major Ratings and Characteristics Description/Features Characteristics 80SQ. Units lF AV Rectangular waveform 8 |
OCR Scan |
fl5S452 55to175 Tj-125â 554S2 Q17121 | |
diode D83 004
Abstract: D83 - 004
|
OCR Scan |
12081/A SD300N/R 12-Thermal diode D83 004 D83 - 004 | |
Contextual Info: PD-2.047C International S Rectifier s o s q . s e r i e s SCHOTTKY RECTIFIER 8 Amp Description/Features Major Ratings and Characteristics Characteristics 80SQ. Units ' f AV Rectan9ular waveform 8 A 35 to 45 V Irsm @tp-5(jssine 2400 A VF 0.44 V -55 to 175 |
OCR Scan |
Tj-125 | |
Contextual Info: • 46 55 4 5 2 DD12442 T24 ■ INR PD-2.047C INTERNATIONAL RECTIFIER International Rectifier sosq . s e r ie s SCHOTTKY RECTIFIER 8 Amp Description/Features Major Ratings and Characteristics The 80SQ axial leaded Schottky rectifier series has been optimized for low reverse leakage at high temperature. The |
OCR Scan |
DD12442 Q01244S | |
TEM 1208-1Contextual Info: Bulletin 12081/A International lëRlRectifier s d 3oon/ r s e r ie s STANDARD RECOVERY DIODES Stud Version 380A Features • W id e current range ■ High vo ltag e ratings up to 3 2 0 0 V ■ High surge current capab ilities ■ Stud catho de and stud an od e version |
OCR Scan |
12081/A TEM 1208-1 | |
w4 DIODEContextual Info: SKM 600GA176D Absolute Maximum Ratings Symbol Conditions IGBT 789, .R 2 QG P8 D8 .R 2 OGK P8 D8VW .03+ 2 QGP8A * 5(+ %41(/<-+( +=(0-?-(F Trench IGBT Modules SKM 600GA176D 4=+0 OHKK 7 BBK E .0 2 TK P8 UHK E TKK E Y QK 7 OK ¥+ .0 2 QG P8 BKK E .0 2 TK P8 |
Original |
600GA176D w4 DIODE | |
|
|||
Contextual Info: KD424520HB Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 H iQ h ~ B 6 tB Dual Darlington Transistor Module 200 Amperes/600 Volts Description: The Powerex High-Beta Dual Darlington Transistor Modules are high power devices designed for |
OCR Scan |
KD424520HB Amperes/600 J4b21 | |
diode D83
Abstract: 50m01 U300 KD424520HB d82 diode darlington 40A
|
OCR Scan |
KD424520HB Amperes/600 diode D83 50m01 U300 KD424520HB d82 diode darlington 40A | |
2514-6002UB
Abstract: NSSW100 TPS6118x NSSW100CT HPA260A JP13 JP15 2514-6002UB header NSP nichia TP72
|
Original |
SLVU238 WLEDEVM-260 TP1-TP89) 14-pin TPS6118xEVMs 2514-6002UB NSSW100 TPS6118x NSSW100CT HPA260A JP13 JP15 2514-6002UB header NSP nichia TP72 | |
Contextual Info: SKM 100GB176D Absolute Maximum Ratings Symbol Conditions IGBT 789, .O 2 MG N8 D8 .O 2 QGJ N8 D8TU .03+ 2 MGN8A * 5(+ %41(/<-+( +=(0-?-(F SEMITRANS 2 Trench IGBT Modules QHJJ 7 QMG E .0 2 RJ N8 SJ E QGJ E W MJ 7 QJ [+ .0 2 MG N8 QJJ E .0 2 RJ N8 HJ E QGJ |
Original |
100GB176D | |
TRANSISTOR D123
Abstract: D84 TRANSISTOR TRANSISTOR D114 5951-4 dimmer controller ic D123 vfl display serial
|
Original |
EN5951 LC75757E, 5757W LC75757E LC75757W 3151-QFP64E LC75757E] TRANSISTOR D123 D84 TRANSISTOR TRANSISTOR D114 5951-4 dimmer controller ic D123 vfl display serial | |
EZ 532Contextual Info: SKM 400GB176D Absolute Maximum Ratings Symbol Conditions IGBT 789, .P 2 NG O8 D8 .P 2 RGJ O8 .03+ 2 NGO8A * 5(+ %41(/<-+( +=(0-?-(F RHJJ 7 STJ E .0 2 UJ O8 TRJ E BJJ E Y NJ 7 RJ ]+ .0 2 NG O8 SSJ E .0 2 UJ O8 TJJ E BJJ E .P 2 RGJ O8 NNJJ E .03+( 2 NG O8 |
Original |
400GB176D EZ 532 | |
BUV 89Contextual Info: SKM 300GB066D Absolute Maximum Ratings Symbol Conditions IGBT 789, .R 2 JK L8 D8 .R 2 I]K L8 D8Y` .03+ 2 JKL8A * 5(+ %41(/<-+( +=(0-?-(F BOO 7 X^O E .0 2 _O L8 XOO E BOO E a JO 7 .R 2 IKO L8 B U+ .0 2 JK L8 XKO E .0 2 _O L8 JKO E BOO E I]BO E KOO E M NO PPP Q I]K |
Original |
300GB066D BUV 89 | |
Contextual Info: SKM 75GB176D Absolute Maximum Ratings Symbol Conditions IGBT 789, .O 2 MG N8 D8 .O 2 QGJ N8 D8ST .03+ 2 MGN8A * 5(+ %41(/<-+( +=(0-?-(F SEMITRANS 2 Trench IGBT Modules QHJJ 7 RJ E .0 2 RJ N8 GG E QJJ E V MJ 7 QJ Z+ .0 2 MG N8 RJ E .0 2 RJ N8 GG E QJJ E |
Original |
75GB176D 11Typ. 12Typ. | |
IC 4093 pin configuration
Abstract: BRY 56 B IC 4093 MARKING 30 5Y SO2894 4392 4392 a ic BCV27 BFR30 BFR31
|
OCR Scan |
O-236 IC 4093 pin configuration BRY 56 B IC 4093 MARKING 30 5Y SO2894 4392 4392 a ic BCV27 BFR30 BFR31 | |
O41 DIODEContextual Info: SKM 145GB176D Absolute Maximum Ratings Symbol Conditions IGBT 789, .T 2 RG S8 D8 .T 2 VGJ S8 .03+ 2 RGS8A * 5(+ %41(/<-+( +=(0-?-(F VHJJ 7 VBJ E .03+( 2 WJ S8 VRJ E RJJ E Y RJ 7 VJ ]+ .03+( 2 RG S8 V_J E .03+( 2 WJ S8 VJJ E RJJ E .T 2 VGJ S8 V_JJ E .03+( 2 RG S8 |
Original |
145GB176D O41 DIODE |