D9842AB Search Results

FDC6331L

Abstract: SSOT-6 ZENER SINGLE COLOR CODE FDC633N 125OC AN1030 CBVK741B019 F63TNR
Contextual Info: FDC6331L Integrated Load Switch Features General Description • –2.8 A, –8 V. RDS ON = 55 mΩ @ V GS = –4.5 V RDS(ON) = 70 mΩ @ V GS = –2.5 V RDS(ON) = 100 mΩ @ V GS = –1.8 V This device is particularly suited for compact power management in portable electronic equipment where

FDP2670

Abstract: D2Pak Package dimensions CBVK741B019 EO70 F63TNR FDB2670 FDP7060 NDP4060L
Contextual Info: FDP2670/FDB2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 200V MOSFETs with low on-resistance and

CBVK741B019

Abstract: EO70 F63TNR FDB6644 FDP6644 FDP7060 NDP4060L
Contextual Info: FDP6644/FDB6644 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

D 1437 transistor

Abstract: CBVK741B019 F63TNR L86Z NDM3000 NDM3001 SOIC-16
Contextual Info: SOIC-16 Tape and Reel Data SOIC 16ld s Packaging Configuration: Figure 1.0 N Packaging Description: ELECTROSTATIC SENSITIVE DEVICES DO NOT SHIP O R STORE NEAR STRONG ELECTROSTATIC ELECTROM AGNETIC, MAGNETIC OR RADIOACTIVE FIELDS T NR DATE PT NUM BER PEEL STRENGTH M IN _gms

diode sod123 W1

Abstract: CBVK741B019 F63TNR MMSZ5221B sod123 E2
Contextual Info: SOD-123 Tape and Reel Data SOD123 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SOD123 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated

SSOT-3

Abstract: CBVK741B019 F63TNR FSB649 MMSZ5221B SuperSOTTM -3
Contextual Info: FSB649 FSB649 C E B SuperSOTTM-3 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Sourced from Process NC. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

F852 transistor

Abstract: F852 CBVK741B019 F63TNR PN2222A
Contextual Info: SOT-223 Tape and Reel Data SOT-223 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SOT-223 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated

Contextual Info: FDN371N 20V N-Channel PowerTrench MOSFET General Description Features This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • 2.5 A, 20 V. RDS ON = 50 mΩ @ VGS = 4.5 V

high voltage mosfet, to-220 case

Contextual Info: FDP6644S/FDB6644S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

Contextual Info: FDP6690S/FDB6690S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

CBVK741B019

Abstract: F63TNR FDG327N FDG6302P SC70-6
Contextual Info: FDG327N 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use

BS170

Abstract: BS170 application note mosfet bs170 transistor MOSFET BS170 sot23 BS170 BS170 AN equivalent of BS170 transistor BS170 EQUIVALENT FOR bs170 MMBF170
Contextual Info: BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been

SSOT-3

Abstract: CBVK741B019 F63TNR MMSZ5221B ssot3
Contextual Info: SuperSOTTM-3 Tape and Reel Data SSOT-3 Packaging Configuration: Figure 1.0 Customize Label Packaging Description: SSOT-3 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated

MOSFET and parallel Schottky diode

Abstract: CBVK741B019 EO70 FDB6644S FDP6644 FDP6644S FDP7060
Contextual Info: FDP6644S/FDB6644S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

CBVK741B019

Abstract: F63TNR FDG329N FDG6302P SC70-6 Part marking 42 SC70-6
Contextual Info: FDG329N 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use

FDC6420C

Abstract: CBVK741B019 F63TNR FDC633N
Contextual Info: FDC6420C 20V N & P-Channel PowerTrench MOSFETs General Description Features These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior

FDC3601N

Abstract: SSOT-6 CBVK741B019 F63TNR FDC633N
Contextual Info: FDC3601N Dual N-Channel 100V Specified PowerTrenchMOSFET Features • 1.0 A, 100 V. General Description These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low

CBVK741B019

Abstract: EO70 F63TNR FDB2570 FDP2570 FDP7060 NDP4060L D2Pak Package dimensions
Contextual Info: FDP2570/FDB2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and

2539a

Contextual Info: FDP2570/FDB2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and

Contextual Info: FDP6670S/FDB6670S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

marking 333

Abstract: FDC6333C
Contextual Info: FDC6333C 30V N & P-Channel PowerTrench MOSFETs General Description Features These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior

MARKING 333

Contextual Info: FDC6333C 30V N & P-Channel PowerTrench MOSFETs General Description Features These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior

Contextual Info: FDG6332C 20V N & P-Channel PowerTrench MOSFETs General Description Features The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior

Marking Code m sc70-6

Abstract: FDG6316P
Contextual Info: FDG6316P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –0.7 A, –12 V.