DARLINGTON -5A 100V PNP Search Results

Contextual Info: A Product Line of Diodes Incorporated FMMT634 100V NPN DARLINGTON TRANSISTOR IN SOT23 Features Mechanical Data •           BVCEO > 100V IC = 900mA high Continuous Collector Current ICM = 5A Peak Pulse Current 625mW Power dissipation

FMMT634Q

Contextual Info: A Product Line of Diodes Incorporated FMMT634 100V NPN DARLINGTON TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > 100V IC = 900mA high Continuous Collector Current ICM = 5A Peak Pulse Current

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Abstract: CZT127 KZT127
Contextual Info: Transistors IC SMD Type Surface Mount PNP Silicon Power Darlington Transistor KZT127 CZT127 SOT-223 Features Unit: mm +0.2 3.50-0.2 6.50 +0.2 -0.2 Low voltage (max. 100V). +0.1 3.00-0.1 +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 High current (max. 5A). +0.2

IB 100MA NPN

Abstract: HBDW93C HBDW94C VCE 100V transistor power darlington transistor 10A
Contextual Info: PNP DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HBDW94C █ APPLICATIONS Power Linear And Switching Applicatione. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 Tstg——Storage Temperature………………………… -65~150℃

DARLINGTON 3A 100V npn

Abstract: hfe 2500 NTE264
Contextual Info: NTE263 NPN & NTE264 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications.

NTE270

Contextual Info: NTE270 NPN & NTE271 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch Description: The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications.

NTE247

Abstract: nte248
Contextual Info: NTE247 NPN & NTE248 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE247 (NPN) and NTE248 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications.

HP147T

Contextual Info: PNP DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HP147T █ APPLICATIONS High DC Current Gain █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃

NTE262

Abstract: NTE261 DARLINGTON 3A 100V npn
Contextual Info: NTE261 NPN & NTE262 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications.

HP147TS

Contextual Info: PNP DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HP147TS █ APPLICATIONS High DC Current Gain █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃

HP147TSW

Contextual Info: PNP DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HP147TSW █ APPLICATIONS High DC Current Gain █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-263 T stg ——Storage Temperature………………………… －55~150℃ T j ——Junction Temperature……………………………… 150℃

TIP127 Application Note

Abstract: TRANSISTOR tip122 high gain low voltage PNP transistor darlington power transistor TIP122 TIP127 power transistor pnp darlington
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= -3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -100V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -2.0V(Max)@ IC= -3A

ULN2003NA

Abstract: transistor af 178 ms4581p 8ch pnp DARLINGTON TRANSISTOR ARRAY DARLINGTON 3A 100V npn array pnp darlington array ULN ULN2004NA 54566P pnp transistor array uln TD62981P
Contextual Info: [1] INDEX 1. IFD Family Tree [ 1 ] INDEX 1. IFD Family Tree [i]n t e r -@a c e g n v e r — Transistor-Array — Monolithic Bipolar Series Array Series |T r a n s i s t o r | [ A r r a y ] |DM O S| T r a n s i s t o r |A r r a y | — Multi-Chip — Module

Contextual Info: TIP145T/146T/147T PNP Epitaxial Silicon Darlington Transistor Monolithic Construction With Built In Base-Emitter Shunt Resistors • • • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A Min. Industrial Use Complement to TIP140T/141T/142T Equivalent Circuit

CJF6388

Abstract: CJF6668
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR DARLINGTON POWER TRANSISTOR CJF6668 TO-220FP Fully Isolated Plastic Package Complementary CJF6388 General Purpose Darlington Amplifier and Switching Applications

CJF6388

Abstract: CJF6668
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR DARLINGTON POWER TRANSISTOR CJF6668 TO-220FP Fully Isolated Plastic Package Complementary CJF6388 General Purpose Darlington Amplifier and Switching Applications

CJF6388

Abstract: CJF6668
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR DARLINGTON POWER TRANSISTOR CJF6668 TO-220FP Fully Isolated Plastic Package Complementary CJF6388 General Purpose Darlington Amplifier and Switching Applications

Contextual Info: roaucti, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Darlington Power Transistor TIP147T DESCRIPTION • High DC Current Gain: h FE = 1000(Min)@ IC=-5A • Collector-Emitter Sustaining Voltage-

120v 10a transistor

Abstract: DARLINGTON -5A 100v pnp 2SB955 2SD1126
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= -5A ·Collector-Emitter Breakdown Voltage: V(BR)CEO = -120V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -5A

TIP145

Abstract: Tip147 PNP Darlington 100V 10A TIP147 TIP146 tip147 data sheet
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors TIP145/146/147 DESCRIPTION •With TO-3PN package ·DARLINGTON ·High DC current gain ·Complement to type TIP140/141/142 APPLICATIONS ·Designed for general–purpose amplifier and

Contextual Info: <-$£.tni-ConaiLekoi Lpioaueti, Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TIP147 Silicon PNP Darlington Power Transistor DESCRIPTION 1 • High DC Current Gain: h FE = 1000(Min)@lc=-5A

Contextual Info: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR KSB601 LOW FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING INDUSTRIAL USE T O -2 2 0 • Complement to KSD560 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage V cB O -1 0 0 Collector-Emitter Voltage

TIP145F

Abstract: TIP146F TIP147F 147F
Contextual Info: PNP EPITAXIAL DARLINGTON TRANSISTOR TIP145F/146F/147F HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-3PF Complement to TIP140F/141F/142F ABSOLUTE MAXIMUM RATINGS

ic 3A hfe 500

Abstract: IC 3A 2SB601
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 2000 Min @ IC= -3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -100V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -3A