NTE2349
Abstract: 300w power amplifier circuit diagram complementary npn-pnp darlington 300w nte2350
Contextual Info: NTE2349 NPN & NTE2350 (PNP) Silicon Darlington Transistors High Current, General Purpose Description: The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3 type package designed for use as output devices in general purpose amplifier applications.
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NTE2349
NTE2350
250mA
500mA
200mA
300mA
NTE2349
300w power amplifier circuit diagram
complementary npn-pnp
darlington 300w
nte2350
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300w power amplifier circuit diagram
Abstract: complementary npn-pnp darlington 300w NTE2350 NTE2349 300w transistor power amplifier circuit diagram COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS SILICON COMPLEMENTARY transistors darlington NTE234
Contextual Info: NTE2349 NPN & NTE2350 (PNP) Silicon Darlington Transistors High Current, General Purpose Description: The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3 type package designed for use as output devices in general purpose amplifier applications.
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NTE2349
NTE2350
250mA
500mA
200mA
300mA
300w power amplifier circuit diagram
complementary npn-pnp
darlington 300w
NTE2350
NTE2349
300w transistor power amplifier circuit diagram
COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS
SILICON COMPLEMENTARY transistors darlington
NTE234
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DARLINGTON 30A 100V npn
Abstract: TO3 package PMD18D100 darlington 300w 2.2KW
Contextual Info: SEME PMD18D100 LAB NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. FEATURES 2. 5 20.3 max. E 30.1 1 .0 B • • • • TO3 PACKAGE 100V 100A PEAK 300 WATTS 16.9 39.5 max. 4.2 DESCRIPTION 10.9 The PMD18D100 is an NPN Darlington
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PMD18D100
PMD18D100
100mA
300ms,
DARLINGTON 30A 100V npn
TO3 package
darlington 300w
2.2KW
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H11GX
Abstract: H11G1 datasheet H11G2 H11G1 H11G3
Contextual Info: HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS H11G1 H11G2 H11G3 DESCRIPTION The H11GX series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor
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H11G1
H11G2
H11G3
H11GX
E90700
00045A
H11G1 datasheet
H11G2
H11G1
H11G3
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H11GX
Abstract: H11G1 H11G2 H11G3
Contextual Info: HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS H11G1 H11G2 H11G3 DESCRIPTION The H11GX series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor
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H11G1
H11G2
H11G3
H11GX
E90700
H11G1
H11G2
H11G3
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MOC8030
Abstract: MOC8050
Contextual Info: PHOTODARLINGTON OPTOCOUPLERS NO BASE CONNECTION MOC8030 MOC8050 DESCRIPTION PACKAGE DIMENSIONS The MOC8030 and MOC8050 are photodarlington-type optically coupled optocouplers. The devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor.
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MOC8030
MOC8050
MOC8030
MOC8050
MOC8030)
MOC8050)
E90700
01HOUT
DS300264
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MOC8020
Abstract: MOC8021
Contextual Info: PHOTODARLINGTON OPTOCOUPLERS NO BASE CONNECTION MOC8020 DESCRIPTION MOC8021 PACKAGE DIMENSIONS The MOC8020 and MOC8021 are photodarlington-type optically coupled optocouplers. The devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor.
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MOC8020
MOC8021
MOC8020
MOC8021
MOC8020)
MOC8021)
E90700
DS300392
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MOC8030
Abstract: MOC8050
Contextual Info: PHOTODARLINGTON OPTOCOUPLERS NO BASE CONNECTION MOC8030 MOC8050 DESCRIPTION PACKAGE DIMENSIONS The MOC8030 and MOC8050 are photodarlington-type optically coupled optocouplers. The devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor.
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MOC8030
MOC8050
MOC8030
MOC8050
MOC8030)
MOC8050)
E90700
01lopment.
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MOC8020
Abstract: MOC8021 IR phototransistor
Contextual Info: PHOTODARLINGTON OPTOCOUPLERS NO BASE CONNECTION MOC8020 DESCRIPTION MOC8021 PACKAGE DIMENSIONS The MOC8020 and MOC8021 are photodarlington-type optically coupled optocouplers. The devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor.
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MOC8020
MOC8021
MOC8020
MOC8021
MOC8020)
MOC8021)
E90700
IR phototransistor
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TA 2092 N
Abstract: MOC119 SE-171 Swindon Silicon Systems
Contextual Info: PHOTODARLINGTON OPTOCOUPLERS NO BASE CONNECTION MOC119 DESCRIPTION PACKAGE DIMENSIONS The MOC119 device has a gallium arsenide infrared emitting diode coupled to a silicon darlington phototransistor. PIN 1 ID. 0.270 (6.86) 0.240 (6.10) SEATING PLANE 6 FEATURES
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MOC119
MOC119
E90700
DS300382
TA 2092 N
SE-171
Swindon Silicon Systems
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MOC8030
Abstract: MOC8050 darlington 300w
Contextual Info: PHOTODARLINGTON OPTOCOUPLERS Preliminary NO BASE CONNECTION MOC8030 MOC8050 DESCRIPTION PACKAGE DIMENSIONS The MOC8030 and MOC8050 are photodarlington-type optically coupled optocouplers. The devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor.
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MOC8030
MOC8050
MOC8030
MOC8050
MOC8030)
MOC8050)
E90700
DS300264
darlington 300w
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MOC119
Abstract: darlington 300w
Contextual Info: PHOTODARLINGTON OPTOCOUPLERS NO BASE CONNECTION MOC119 DESCRIPTION PACKAGE DIMENSIONS The MOC119 device has a gallium arsenide infrared emitting diode coupled to a silicon darlington phototransistor. PIN 1 ID. 0.270 (6.86) 0.240 (6.10) SEATING PLANE 6 FEATURES
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MOC119
MOC119
E90700
darlington 300w
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Quality Technologies optocouplers
Abstract: B613 IC 1296 QT OPTOELECTRONICS MOC8030 MOC8050 PONT DIODE 0884 qt
Contextual Info: PHOTODARLINGTON OPTOCOUPLERS Preliminary NO BASE CONNECTION MOC8030 MOC8050 DESCRIPTION PACKAGE DIMENSIONS The MOC8030 and MOC8050 are photodarlington-type optically coupled optocouplers. The devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor.
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MOC8030
MOC8050
MOC8030
MOC8050
MOC8030)
MOC8050)
E90700
SS16/1,
HP19-3EY
00035A
Quality Technologies optocouplers
B613
IC 1296
QT OPTOELECTRONICS
PONT DIODE
0884 qt
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K1 MARK 6PIN
Abstract: MOC1193S
Contextual Info: PHOTODARLINGTON OPTOCOUPLERS NO BASE CONNECTION MOC119 DESCRIPTION PACKAGE DIMENSIONS The MOC119 device has a gallium arsenide infrared emitting diode coupled to a silicon darlington phototransistor. PIN 1 ID. 0.270 (6.86) 0.240 (6.10) SEATING PLANE 6 FEATURES
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MOC119
MOC119
E90700
diffe700,
P01101067
MOC119300
MOC119300W
MOC1193S
MOC1193SD
K1 MARK 6PIN
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MOC8020
Abstract: MOC8021
Contextual Info: PHOTODARLINGTON OPTOCOUPLERS Preliminary NO BASE CONNECTION MOC8020 MOC8021 DESCRIPTION PACKAGE DIMENSIONS The MOC8020 and MOC8021 are photodarlington-type optically coupled optocouplers. The devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor.
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MOC8020
MOC8021
MOC8020
MOC8021
MOC8020)
MOC8021)
E90700
DS300392
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Contextual Info: -/ , Una. CX 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 PMD18D100 NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm FEATURES • TO3 PACKAGE • 100V • 100APEAK L • 300 WATTS *.* DESCRIPTION TO3 Package.
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PMD18D100
100APEAK
PMD18D100
100mA
300us,
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OMA120
Abstract: FZT605 FZT604 FZT705 ARAA 14ge
Contextual Info: I SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON FZT604 TRANSISTORS ~ ISSUE 3- OCTOBER 1995 FEATURES * Guaranteed * Fast Switching c h~~ Specified up to 2A E PARTMARKING DEVICE TYPE IN FULL DETAIL - COMPLEMENTARY TYPES - FZT604 - FZ1704 c @ B FZT605 - FZT705
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OT223
FZT604
FZT604
FZ1704
FZT605
FZT705
FZT605
FZTBI14
OMA120
FZT705
ARAA
14ge
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2N3055 power amplifier circuit
Abstract: 40636 40363 300W TRANSISTOR AUDIO AMPLIFIER 200w silicon audio power transistor 200W TRANSISTOR AUDIO AMPLIFIER 40872 2N3439 2N4063 40412
Contextual Info: POWER TRANSISTOR TYPES FOR AUDIO-FREQUENCY LINEAR AMPLIFIERS 16Q 6.5 16 Power Output 4n 8Ì2 Imped. 18 45 Output Transistors Circuit P-N-P 40979 (2N6292) 40980 (2N6111) - True Comp. 40816 (2N5495) (2N6269) 40817 (2N6111) - Comp. Darlington BDX 33 2N6386
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2N6292)
2N6111)
2N5495)
2N6269)
2N4036)
2N6386
TA8201
2N2102)
2N3055 power amplifier circuit
40636
40363
300W TRANSISTOR AUDIO AMPLIFIER
200w silicon audio power transistor
200W TRANSISTOR AUDIO AMPLIFIER
40872
2N3439
2N4063
40412
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transistor 40409
Abstract: 40409 Transistor 40408 transistor 40409 TRANSISTOR 40389 2n2102 class ab audio amplifier circuit transistor 2n3055 40409 silicon 300W TRANSISTOR AUDIO AMPLIFIER 40361
Contextual Info: POWER TRANSISTOR TYPES FOR AUDIO-FREQUENCY LINEAR AMPLIFIERS 16Q 6.5 16 Power Output 4n 8Ì2 Imped. 18 45 Output Transistors Circuit P-N-P 40979 (2N6292) 40980 (2N6111) - True Comp. 40816 (2N5495) (2N6269) 40817 (2N6111) - Comp. Darlington BDX 33 2N6386
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2N6292)
2N6111)
2N5495)
2N6269)
2N4036)
2N6386
TA8201
2N2102)
transistor 40409
40409 Transistor
40408 transistor
40409
TRANSISTOR 40389
2n2102
class ab audio amplifier circuit transistor 2n3055
40409 silicon
300W TRANSISTOR AUDIO AMPLIFIER
40361
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transistor mj11028 equivalent
Abstract: MJ11033 MJ11032 darlington 300w transistor mj11032 equivalent MJ11028 MJ11029 300w amplifier darlington npn 90v MJ11031
Contextual Info: SEME LAB MECHANICAL DATA Dimensions in mm inches NPN PNP MJ11028 MJ11030 MJ11032 MJ11029 MJ11031 MJ11033 COMPLEMENTARY DARLINGTON POWER TRANSISTOR 25.4 (1.0) 10.92 (0.430) 1.57 (0.062) 30 .15 (1.187 ) FEATURES 1 • HIGH DC CURRENT GAIN HFE = 1000 Min @ IC = 25A
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MJ11028
MJ11030
MJ11032
MJ11029
MJ11031
MJ11033
TEMPJ11033
100mA
transistor mj11028 equivalent
MJ11033
MJ11032
darlington 300w
transistor mj11032 equivalent
MJ11028
MJ11029
300w amplifier
darlington npn 90v
MJ11031
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optocoupler 815
Abstract: OPTOCOUPLER MARKING CODE OPTOCOUPLER 4-PIN application note digital optocoupler 4pin isolation 4 pin optocoupler how to build optocoupler led phototransistor pairs without optocoupler OPTOCOUPLER 4-PIN H11B815 4PIN optocoupler
Contextual Info: H11B815 4-Pin Photodarlington Optocoupler Description Applications The H11B815 consists of a gallium arsenide infrared emitting diode driving a silicon Darlington phototransistor in a 4-pin dual in-line package. • ■ ■ ■ ■ Features ■ Compact 4-pin package
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H11B815
H11B815
E90700)
optocoupler 815
OPTOCOUPLER MARKING CODE
OPTOCOUPLER 4-PIN application note
digital optocoupler 4pin isolation
4 pin optocoupler
how to build optocoupler
led phototransistor pairs without optocoupler
OPTOCOUPLER 4-PIN
4PIN optocoupler
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OPTOCOUPLER MARKING CODE
Abstract: optocoupler 815 OPTOCOUPLER MARKING CODE 815 H11B815
Contextual Info: H11B815 4-Pin Photodarlington Optocoupler Description Applications The H11B815 consists of a gallium arsenide infrared emitting diode driving a silicon Darlington phototransistor in a 4-pin dual in-line package. • ■ ■ ■ ■ Features ■ Compact 4-pin package
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H11B815
E90700)
H11B815300
H11B815300W
H11B8153S
H11B8153SD
H11B815S
OPTOCOUPLER MARKING CODE
optocoupler 815
OPTOCOUPLER MARKING CODE 815
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2t751
Abstract: 40871 transistor 40636 40872 40872 transistor BD243 40594 Transistor 2n6320 2N5415 B0243C
Contextual Info: POWER TRANSISTOR TYPES FOR AUDIO-FREQUENCY LINEAR AMPLIFIERS 16Q 6 .5 16 Power Output 4n 8Ì2 Imped. 18 45 Output Transistors Circuit P-N-P 40979 (2N6292) 40980 (2N6111) - True Comp. 40816 (2N5495) (2N6269) 40817 (2N6111) - Comp. Darlington BDX 33 2N6386
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OCR Scan
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2N6292)
2N6111)
2N5495)
2N6269)
2N4036)
2N6386
TA8201
2N2102)
2t751
40871 transistor
40636
40872
40872 transistor
BD243
40594 Transistor
2n6320
2N5415
B0243C
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40872
Abstract: 40872 transistor 40871 2N6180 npn 40872 2N6175 2N6178 2N6179 40988 40636
Contextual Info: POWER TRANSISTOR TYPES FOR AUDIO-FREQUENCY LINEAR AMPLIFIERS 16Q 6 .5 16 Power Output 4n 8Ì2 Imped. 18 45 Output Transistors Circuit P-N-P 40979 (2N6292) 40980 (2N6111) - True Comp. 40816 (2N5495) (2N6269) 40817 (2N6111) - Comp. Darlington BDX 33 2N6386
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OCR Scan
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2N6292)
2N6111)
2N5495)
2N6269)
2N4036)
2N6386
TA8201
2N2102)
40872
40872 transistor
40871
2N6180
npn 40872
2N6175
2N6178
2N6179
40988
40636
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