DARLINGTON 6A Search Results

MC7812Ck

Abstract: MC7805CK MC7815CK MC7824CK MC7808CK MC7806CK LM7805k LM7805KC MC7815CK TO3 LM7812KC
Contextual Info: • High power, high gain Darlington transistors • VcEO 40V, 60V, 80V, 100V PMD 10K,11K,12K,13K, 16K,17K Darlington transistors CASE TEM PERATURE Tc 75°C • The only glass passivated 200°C operating junction tem perature Darlington power transistor range

2SB1674

Abstract: 2SD2615
Contextual Info: 2SD2615 Transistors For Motor / Relay drive 120V, 6A 2SD2615 zStructure NPN Silicon Epitaxial Planar Transistor (Darlington connection) zExternal dimensions (Unit : mm) TO-220FN 4.5 φ3.2 2.8 8.0 15.0 1.2 1.3 14.0 5.0 zFeatures 1) Darlington connection , high hFE.

NPN Transistor 2N3055 darlington

Abstract: lambda LAS PMD 1000 stc transistors series 2N3055 4D ic 810 2N3055 series voltage regulator 2N3055 PMD12K40 2N3055-2
Contextual Info: • High power, high gain Darlington transistors • VcEO 40V, 60V, 80V, 100V PMD 10K,11K,12K,13K, 16K,17K Darlington transistors CASE T E M P E R A T U R E T c 75°C • The only glass passivated 200°C operating junction tem perature Darlington power transistor range

MJE5740

Abstract: transistor 2n222 2n222 TRANSISTOR 1N493 2N222 2N2905 MJE5742 MR826 OF 2n222
Contextual Info: ON Semiconductor MJE5740 MJE5742 * NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high–voltage power switching in inductive circuits. They are particularly suited for operation in applications such as:

ITC117P

Contextual Info: ITC117P Integrated Telecom Circuits INTEGRATED CIRCUITS DIVISION Parameter Relay Load Voltage Relay Load Current Relay On-Resistance max Bridge Rectifier Reverse Voltage Darlington Collector Current Darlington Current Gain Rating 350 120 15 100 120 10,000

MJE5742 equivalent

Abstract: 2n222 TRANSISTOR MJE5742 MJE20 mje5740 2N2905 transistor 1N493
Contextual Info: ON Semiconductor MJE5740 MJE5742 * NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high−voltage power switching in inductive circuits. They are particularly suited for operation in applications such as:

2n222 TRANSISTOR

Abstract: transistor 2n222 2n222 1N493 2N2905 MJE5740 MJE5742 MR826 of diode 2n222 MJE20
Contextual Info: ON Semiconductort MJE5740 MJE5742 * NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high–voltage power switching in inductive circuits. They are particularly suited for operation in applications such as:

2N6059

Contextual Info: 1165895 Silicon NPN power darlington transistor. Features: • • • • • High gain. NPN darlington. High current. High dissipation. Integrated antiparallel collector-emitter diode. Applications: Linear and switching industrial equipment. TO-3 Description:

transistor w16

Contextual Info: ITC117P Integrated Telecom Circuits INTEGRATED CIRCUITS DIVISION Parameter Relay Load Voltage Relay Load Current Relay On-Resistance max Bridge Rectifier Reverse Voltage Darlington Collector Current Darlington Current Gain Rating 350 120 15 100 120 10,000

2N6667

Abstract: 2N6668
Contextual Info: ON Semiconductor 2N6667 2N6668 Darlington Silicon Power Transistors . . . designed for general−purpose amplifier and low speed switching applications. PNP SILICON DARLINGTON POWER TRANSISTORS 10 AMPERES 60 −80 VOLTS 65 WATTS • High DC Current Gain —

Contextual Info: i*imi ra@iû gs SCS-THOMSON 2N6059 SILICON NPN POWER DARLINGTON TRANSISTOR . . . . . . SGS-THOMSON PREFERRED SALESTYPE HIGH GAIN NPN DARLINGTON HIGH CURRENT HIGH DISSIPATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS . LINEAR AND SWITCHING INDUSTRIAL

20000 watt schematics power amp

Abstract: 2N6667 1N5825 2N6387 2N6388 2N6668 MSD6100
Contextual Info: ON Semiconductort 2N6667 2N6668 Darlington Silicon Power Transistors . . . designed for general–purpose amplifier and low speed switching applications. PNP SILICON DARLINGTON POWER TRANSISTORS 10 AMPERES 60–80 VOLTS 65 WATTS • High DC Current Gain —

NTE247

Abstract: nte248
Contextual Info: NTE247 NPN & NTE248 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE247 (NPN) and NTE248 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications.

2N6668

Abstract: 2N6667 1N5825 2N6387 2N6388 MSD6100
Contextual Info: ON Semiconductor 2N6667 2N6668 Darlington Silicon Power Transistors . . . designed for general–purpose amplifier and low speed switching applications. PNP SILICON DARLINGTON POWER TRANSISTORS 10 AMPERES 60–80 VOLTS 65 WATTS • High DC Current Gain —

2SB1674

Abstract: 2SD2615
Contextual Info: 2SB1674 Transistors For Motor / Relay drive −120V, −6A 2SB1674 zStructure PNP Silicon Epitaxial Planar Transistor (Darlington connection) zExternal dimensions (Unit : mm) TO-220FN 4.5 φ3.2 2.8 8.0 15.0 1.2 1.3 14.0 5.0 zFeatures 1) Darlington connection, high hFE.

E2 diode

Abstract: Diode B2x
Contextual Info: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 （M） QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. C2E1

Contextual Info: KSE5740/5741/5742 NPN SILICON DARLINGTON TRANSISTOR HIGH VOLTAGE POWER DARLINGTON TR HIGH VOLTAGE POWER SWITCHING IN INDUCTIVE CIRCUITS TO-220 • Small Engine lgnition • Switching Regulators • Inverters • Solenold and Relay Drivers • Motor Control

Contextual Info: KSE5740/5741/5742 NPN SILICON DARLINGTON TRANSISTOR HIGH VOLTAGE POWER DARLINGTON TR HIGH VOLTAGE POWER SWITCHING IN INDUCTIVE CIRCUITS • Small Engine Ignition • Switching Regulators • Inverters • Solenoid and Relay Drivers • Motor Control ABSOLUTE MAXIMUM RATINGS

BDV64

Abstract: philips BDV64A bdv64b transistor transistors BDV64B bdv64s BDV64B BDV65 BDV64 C
Contextual Info: f BDV64; 64A ; 64C PHILIPS INTERNATIONAL 5bE J> m 711002b 0G43342 3Tb • PHIN T - 3 3 -3 1 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general

Darlington 30A

Abstract: QCA30B60 30A high speed diode QCA30B40 QCB30A40 QCB30A60
Contextual Info: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 M QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. IC 30A, VCEX 400/600V

TCI ignition

Abstract: ignition tci KSE5740/5741/5742
Contextual Info: KSE5740/5741/5742 NPN SILICON DARLINGTON TRANSISTOR HIGH VOLTAGE POWER DARLINGTON TR HIGH VOLTAGE POWER SWITCHING IN INDUCTIVE CIRCUITS • • • • • Sm all Engine Ignition Switching Regulators Inverters Solenoid and Relay Drivers Motor Control ABSOLUTE MAXIMUM RATINGS

KD621230

Abstract: D1220 300 volt 5 ampere transistor a 31 diode oas transistors d100
Contextual Info: m V E R E X KD621230 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Darlington Transistor Module 300 Amperes/1200 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use

QCA150AA100

Abstract: QCA150AA120 24TRANSISTOR E76102
Contextual Info: TRANSISTOR MODULE QCA150AA100 UL;E76102 M QCA150AA100 is a dual Darlington power transistor module which has seriesconnected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated

KS621K30

Abstract: transistor S56 transistor s55 lem lc 300 KS621 powerex ks62 transistor VCEO 1000V
Contextual Info: POWBÌEX KS621K30 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Single Darlington Transistor Module 300 Amperes/1000 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power devices designed for use in