DARLINGTON DIE Search Results

BU323Z

Abstract: free ic 555 BU323Z-D transistor ignition circuit
Contextual Info: ON Semiconductort BU323Z NPN Silicon Power Darlington High Voltage Autoprotected AUTOPROTECTED DARLINGTON 10 AMPERES 360 −450 VOLTS CLAMP 150 WATTS The BU323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is

BU323Z

Contextual Info: ON Semiconductort BU323Z NPN Silicon Power Darlington High Voltage Autoprotected AUTOPROTECTED DARLINGTON 10 AMPERES 360 −450 VOLTS CLAMP 150 WATTS The BU323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is

BU323Z

Abstract: HIGH ENERGY IGNITION CIRCUIT darlington transistor with built-in temperature c
Contextual Info: ON Semiconductort BU323Z NPN Silicon Power Darlington High Voltage Autoprotected AUTOPROTECTED DARLINGTON 10 AMPERES 360–450 VOLTS CLAMP 150 WATTS The BU323Z is a planar, monolithic, high–voltage power Darlington with a built–in active zener clamping circuit. This device is

ignition coil npn power darlington

Abstract: HSOP16 TD62064 TD62064BFG TD62064BP1G
Contextual Info: TD62064BP1G/BFG TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic TD62064BP1G,TD62064BFG 4ch High-Current Darlington Sink Driver The TD62064BP1G and TD62064BFG are high-voltage, high-current darlington drivers comprised of four NPN darlington pairs. All units feature integral clamp diodes for

Contextual Info: TD62064BP1G/BFG TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic TD62064BP1G,TD62064BFG 4ch High-Current Darlington Sink Driver The TD62064BP1G and TD62064BFG are high-voltage, high-current darlington drivers comprised of four NPN darlington pairs. All units feature integral clamp diodes for

TD62064

Abstract: HSOP16 TD62064BFG TD62064BP1G BFG DIODE
Contextual Info: TD62064BP1G/BFG TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic TD62064BP1G,TD62064BFG 4ch High-Current Darlington Sink Driver The TD62064BP1G and TD62064BFG are high-voltage, high-current darlington drivers comprised of four NPN darlington pairs. All units feature integral clamp diodes for

BU323Z

Contextual Info: ON Semiconductort BU323Z NPN Silicon Power Darlington High Voltage Autoprotected AUTOPROTECTED DARLINGTON 10 AMPERES 360–450 VOLTS CLAMP 150 WATTS The BU323Z is a planar, monolithic, high–voltage power Darlington with a built–in active zener clamping circuit. This device is

RBE 215 RELAY

Abstract: bu323z
Contextual Info: ON Semiconductort BU323Z NPN Silicon Power Darlington High Voltage Autoprotected AUTOPROTECTED DARLINGTON 10 AMPERES 360 −450 VOLTS CLAMP 150 WATTS The BU323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is

TD62064BFG

Abstract: HSOP16 TD62064 TD62064BP1G relay 8 pin
Contextual Info: TD62064BP1G/BFG TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic TD62064BP1G,TD62064BFG 4ch High-Current Darlington Sink Driver The TD62064BP1G and TD62064BFG are high-voltage, high-current darlington drivers comprised of four NPN darlington pairs. All units feature integral clamp diodes for

Contextual Info: TD62064BP1G/BFG TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic TD62064BP1G,TD62064BFG 4ch High-Current Darlington Sink Driver The TD62064BP1G and TD62064BFG are high-voltage, high-current darlington drivers comprised of four NPN darlington pairs. All units feature integral clamp diodes for

Contextual Info: TD62064BP1G/BFG TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic TD62064BP1G,TD62064BFG 4ch High-Current Darlington Sink Driver The TD62064BP1G and TD62064BFG are high-voltage, high-current darlington drivers comprised of four NPN darlington pairs. All units feature integral clamp diodes for

Contextual Info: DC0039/01/PC99-0.06 Die Cut PCM Schottky, SCR, Darlington Module Features Low thermal resistance Natural tack Applications Schottky, SCR, Darlington Module REACH Compliant Properties RoHS Compliant Property PC99 Unit Tolerance Test Method Colour Yellow - -

Contextual Info: DC0039/01/PC99AL-0.10-0.1 Die Cut PCM Schottky, SCR, Darlington Module Features Low thermal resistance Natural tack Applications Schottky, SCR, Darlington Module REACH Compliant Properties RoHS Compliant Property PC99AL Unit Test Method Colour Grey - Visual

Contextual Info: DC0040/01/PC99-0.06 Die Cut PCM SCR Darlington Module Features Low thermal resistance Natural tack Applications SCR Darlington Module REACH Compliant Properties RoHS Compliant Property PC99 Unit Tolerance Test Method Colour Yellow - - Visual Thickness 0.06

Contextual Info: DC0040/01/PC99AL-0.10-0.1 Die Cut PCM SCR Darlington Module Features Low thermal resistance Natural tack Applications SCR Darlington Module REACH Compliant Properties RoHS Compliant Property PC99AL Unit Test Method Colour Grey - Visual Thickness 0.10 mm ASTM D374

BCV26

Contextual Info: BCV26 BCV26 Surface Mount Darlington Si-Epi-Planar Transistors Si-Epi-Planar Darlington-Transistoren für die Oberflächenmontage PNP PNP Version 2010-07-14 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse 1 1.3±0.1

Contextual Info: MMST6427 NPN SURFACE MOUNT DARLINGTON TRANSISTOR Features • • • • • • • Mechanical Data • • 40V Darlington Transistor Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching High Current Gain Ultra-Small Surface Mount Package

mpsd04

Abstract: RXTA14 mpsa14 die SSTA14
Contextual Info: □IE No. NPN Darlington TRANSISTOR DIE No. •MAXIMUM RATINGS T A=25°C Free Air Parameter D— 25 ■ DESCRIPTION EPITAXIAL PLANAR NPN SILICON TRANSISTOR (DARLINGTON) Symbol Value Unit Collector-Emitter Voltage VcEO 30 V Collector-Base Voltage VcBO 40

bt1 marking

Contextual Info: MMBTA13 / MMBTA14 MMBTA13 / MMBTA14 Surface mount Si-epitaxial Darlington Transistors Si-Epitaxial Darlington-Transistoren für die Oberflächenmontage NPN NPN Version 2005-07-13 1.1 2.9 ±0.1 0.4 Type Code 1.3 ±0.1 2.5 max 3 2 1 1.9 Dimensions / Maße [mm]

Contextual Info: MMBTA13 / MMBTA14 MMBTA13 / MMBTA14 Surface mount Si-epitaxial Darlington Transistors Si-Epitaxial Darlington-Transistoren für die Oberflächenmontage NPN NPN Version 2005-07-13 1.1 2.9 ±0.1 0.4 Type Code 1.3 ±0.1 2.5 max 3 2 1 1.9 Dimensions / Maße [mm]

transistor R2U

Abstract: SSTA63 marking B25 transistor b25
Contextual Info: PNP Darlington transistor Die no. B-25 These are epitaxial planar PNP silicon Darlington transistors. Features • Dimensions Units : mm SST3 available in a SST3 (SST, SOT-23) package, see page 300 • collector-to-emitter breakdown voltage, BVCES = 30 V (min)

330105

Abstract: 143-754 metelics 2598 85890 121-270 544 mmic MMA602 462501 97346 550538
Contextual Info: MMA602 Darlington HBT Die FEATURES • 100 KHz to 5 GHz Bandwidth • +21 dBm Output Power at P-1dB Compression • +35 dBm Third Order Intercept The MMA602 is a MMIC InGaP Heterojunction Bipolar Transistor HBT Darlington amplifier provided in die form. The amplifier

Contextual Info: Die no. D-25 NPN Darlington transistor These are epitaxial planar NPN silicon Darlington transistors. Dimensions Units : mm TO-92 Features • available in TO-92 package, for packaging information, see page 448 • collector-to-emitter breakdown voltage, BVCES = 30 V (min) at

"Die No."

Contextual Info: Die no. D-69 NPN Darlington transistor These are epitaxial planar NPN silicon Darlington transistors. Dimensions Units : mm TO-92 Features • available in TO-92 package; for packaging information, see page 448 • collector-to-emitter breakdown voltage, BVCES = 60 V (min) at