DARLINGTON FET AMPLIFIER Search Results

suf-3000

Contextual Info: Preliminary SUF-3000 0.25-16 GHz, Cascadable pHEMT MMIC Amplifier Product Description Sirenza Microdevices’ SUF-3000 is a monolithically matched broadband high IP3 gain block covering 0.25-16 GHz. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain

Contextual Info: Preliminary SUF-5000 0.1-3.7 GHz, Cascadable pHEMT MMIC Amplifier Product Description Sirenza Microdevices’ SUF-5000 is a monolithically matched broadband high IP3 gain block covering 0.1 - 3.7 GHz. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain

SUF-4000

Abstract: 15 GHz high power amplifier
Contextual Info: Preliminary SUF-4000 Product Description Sirenza Microdevices’ SUF-4000 is a monolithically matched broadband high IP3 gain block covering 0.15-10 GHz. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active bias network that operates from

Contextual Info: Preliminary SUF-2000 Product Description Sirenza Microdevices’ SUF-2000 is a monolithically matched broadband high IP3 gain block covering 0.05-10 GHz. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active bias network that operates from

SUF-9000

Abstract: SiGe HBT GAIN BLOCK MMIC AMPLIFIER pHEMT operating junction temperature
Contextual Info: SUF-9000DC to 10 GHz, Cascadable pHEMT MMIC Amplifier SUF-9000 Preliminary DC TO 10 GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: Bare Die, 0.83 mm x 0.74 mm Product Description Features RFMD’s SUF-9000 is a monolithically matched broadband high IP3 gain block covering DC to 10 GHz. This pHEMT FET-based amplifier uses a self-bias Darlington

Contextual Info: SUF-6000 2GHz to 16GHz Broadband pHEMT Amplifier SUF-6000 Proposed 2GHz to 16GHz BROADBAND pHEMT AMPLIFIER Product Description Features RFMD’s SUF-6000 is a high gain broadband 2-stage amplifier covering 2GHz to 16GHz for wideband communication and general purpose applications. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active

SUF-5033

Abstract: high frequency 2.45GHz mixer for bluetooth
Contextual Info: SUF-5033 SUF-5033Low Noise, High Gain SiGe HBT 0.1GHZ TO 4.0GHZ, CASCADABLE PHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3mmx3mm Product Description Features The SUF-5033 is a monolithically matched broadband high IP3 gain block covering 0.1GHz to 4.0GHz. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active bias network that operates from a single 5V supply. It

Contextual Info: SUF-6000 SUF-6000 2 GHz to 16 GHz Broadband pHEMT Amplifier 2 GHz to 16 GHz BROADBAND pHEMT AMPLIFIER Package Style: 1.80 mm x 0.88 mm Product Description Features RFMD’s SUF-6000 is a high gain broadband 2-stage amplifier covering 2 GHz to 16 GHz for wideband communication and general purpose applications. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active

SUF-5033

Abstract: suf 5033
Contextual Info: SUF-5033 SUF-5033Low Noise, High Gain SiGe HBT 0.1 GHZ TO 4.0 GHZ, CASCADABLE PHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3 mm x 3 mm Product Description Features The SUF-5033 is a monolithically matched broadband high IP3 gain block covering 0.1 GHz to 4.0 GHz. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active bias network that operates from a single 5 V supply. It

suf 5033

Contextual Info: SUF-5033 SUF-5033Low Noise, High Gain SiGe HBT 0.1 GHZ TO 4.0 GHZ, CASCADABLE PHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3 mm x 3 mm Product Description Features The SUF-5033 is a monolithically matched broadband high IP3 gain block covering 0.1 GHz to 4.0 GHz. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active bias network that operates from a single 5 V supply. It

2SC5586

Abstract: 2SC5487 2SA2003 sla 1003 transistor 2SC5586 2SA1295 2SC3264 FKV550T SLA5065 SAP16N SAP09
Contextual Info: Transistors 2-1 Power Transistors . 14 2-1-1 Transistors for Audio Amplifiers . 14 • Complementary Transistors for Output . 14

2SC5586

Abstract: 2SC5586 equivalent 2SC5487 SAP16 sla 1003 SAP16N 2SA2003 transistor 2SC5586 sla6024 2SC5586 DATASHEET
Contextual Info: Transistors 2-1 Power Transistors . 14 2-1-1 Transistors for Audio Amplifiers . 14 • Complementary Transistors for Output . 14

Varistor RU

Abstract: SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

2SC5586

Abstract: transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

SE135N

Abstract: SE110N UX-C2B SE140N STR83159 SE130N STR2012 Transistor AC 51 SE140 SE115N
Contextual Info: Type No. Type Type No. Type Index Type No. Order 57 Index (Type No. Order) Type No. Type 2SA1186 2SA1215 Transistors for Audio Amplifier (LAPT) 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1488 2SA1492 2SA1493 2SA1494 2SA1567 2SA1568 2SA1667 2SA1668

darlington pair power transistor

Abstract: AN31001 current amplifier note darlington AN3100 MMG3001NT1 MMG3002NT1 MMG3003NT1 freescale power RF products darlington pair transistor
Contextual Info: Freescale Semiconductor Application Note AN3100 Rev. 0, 3/2005 General Purpose Amplifier Biasing by: Jeff Gengler Freescale Semiconductor INTRODUCTION Freescale Semiconductor’s General Purpose Amplifier GPA devices are all designed to operate from a single

em 234 stepper

Abstract: 2SC5586 equivalent 8002 1018 AUDIO amplifier 2SC5586 2SC5487 voltage doubler bridge varistor 560-2 2sa2003 se125n SE090
Contextual Info: Bulletin No O01ED0 Jun.,2001 SEMICONDUCTORS SHORT FORM CATALOG ICs TRANSISTORS THYRISTORS DIODES LIGHT EMITTING DIODES CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility

2SC5586 equivalent

Abstract: 2sc5586 2sa1694 equivalent 2SC5487 transistor 2SC5586 STR83159 em 234 stepper SE090 SK 5154S 2SK3460 equivalent
Contextual Info: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements

darlington pair transistor

Abstract: Darlington pair AN3100 AN31001
Contextual Info: Freescale Semiconductor Application Note AN3100 Rev. 2, 7/2008 General Purpose Amplifier Biasing by: Jeff Gengler Freescale Semiconductor INTRODUCTION Freescale Semiconductor’s General Purpose Amplifier GPA devices are all designed to operate from a single

Contextual Info: DYNAMIC SATURATION VOLTAGE — A DESIGNER’S COMPARISON By W arren Schultz Motorola Inc. Semiconductor Products Division Reprinted by Permission of POWERCONVERSION INTERNATIONAL, October 1983 Issue, Volume 9, Number 9. 1983 Intertec Communications Inc.

Rethinking The Role Of pHEMT Cascode Amplifiers In RF Design

Contextual Info: Guest Column | February 10, 2014 Rethinking The Role Of pHEMT Cascode Amplifiers In RF Design By Alan Ake, Skyworks Solutions, Inc. I consider myself fortunate that, as a fresh-out-of-school EE, I was able to start my electrical engineering career designing radio frequency RF front ends for what are now antiquated one-way

SE110N

Abstract: A4032 SE130N SE005N SE090N high hfe transistor FMQG5FM SLA7022M SE012 3gu diode
Contextual Info: Index Type No. Order Type No. Type Type No. 2SA1186 Type 16 2SC3830 16 2SC3831 16 2SC3832 19 2SC3833 2SA1294 1R 2SC3834 2SA1295 16 2SC3835 16 2SC3851 General Purpose Transistor 19 16 2SC3852 Low VcE(sat)-High hFE Transistor 18 19 2SC3856 16 2SC3857 Transistors for Audio Am plifier (Single Emitter)

darlington pair transistor 1A

Abstract: npn darlington transistor 150 watts chip die npn transistor darlington die
Contextual Info: Linear Regulator Output Structures Choosing a linear regulator for an application involves more than looking for the part with the lowest dropout voltage or lowest cost. Although IC manufacturers promote regulators with very low dropout voltages, these are often the most expensive part in

MP1620

Abstract: MN2488 MP1620 MN2488 MN2488 equivalent LM4702TA transistors MP1620 it MN2488 star sound audio amplifier circuit diagram transistors MP1620 LM4702 100w audio amplifier pcb
Contextual Info: National Semiconductor Application Note 1490 Mark Brasfield May 2006 Introduction such as THD+N 0.0006% THD , SNR, Frequency Response, Noise and other audio specifications. In addition, these techniques will also assist the designer in creating an audio amplifier that has performance comparable to other