DARLINGTON TIN Search Results

Contextual Info: Darlington Phototransistors PNA2803M PN268-(NC Darlington Phototransistor Unit : mm For optical control systems M Di ain sc te on na tin nc ue e/ d 5.0±0.2 0.6 Features Not soldered 2.0 max. ø3.8±0.2 ø3.0±0.2 Darlington output, high sensitivity Easy to combine with red and infrared light emitting diodes

Contextual Info: Darlington Phototransistors PNA2602M Darlington Phototransistor Unit : mm 4.5±0.3 4.8±0.3 2.4 2.4 ø3.5±0.2 M Di ain sc te on na tin nc ue e/ d Features Not soldered For optical control systems 4.2±0.3 2.3 1.9 2-1.12 2-0.45±0.15 1.2 14.5 2.95 1.0 Darlington output, high sensitivity

Contextual Info: Darlington Phototransistors PNA2603L Darlington Phototransistor Unit : mm For optical control systems 2.9±0.25 1.2 M Di ain sc te on na tin nc ue e/ d 3.9±0.3 Features 2.4 1.5 ø2.4±0.2 Darlington output, high sensitivity 0.9 1.7±0.2 0.8 2.8 Easy to combine light emission and photodetection on same

Contextual Info: SGS-THOMSON iMiniSiRitaignigfafiRiOBinieg MJE802 SILICON NPN POWER DARLINGTON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN DARLINGTON APPLICATIONS . GENERAL PURPOSE SWITCHING DESCRIPTION The MJE802 is a silicon epitaxial-base NPN transistor in monolithic Darlington configuration

Contextual Info: Darlington Phototransistors PN205L- NC Darlington Phototransistor Unit : mm 4.5±0.3 4.8±0.3 2.4 2.4 ø3.5±0.2 Features Not soldered For optical control systems 4.2±0.3 2.3 1.9 2-1.12 2-0.45±0.15 1.2 14.5 2.95 1.0 M Di ain sc te on na tin nc ue e/ d Darlington output, high sensitivity

Contextual Info: 2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR • STMicroelectronics PREFERRED SALESTYPE . NPN DARLINGTON . HIGH CURRENT CAPABILITY . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration

Contextual Info: TO SH IB A TD62164AP/AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62164AP, TD62164AF 4CH HIGH-CURRENT DARLINGTON SINK DRIVER The TD62164AP and TD62164AF are high-voltage, highcurrent darlington drivers comprised of four NPN darlington pairs.

Contextual Info: TO SH IB A TD62008AP/F/AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62008AP, TD62008F, TD62008AF 7CH DARLINGTON SINK DRIVER The TD62008AP/F/AF are high-voltage, high-current darlington drivers comprised of seven NPN darlington pairs.

Contextual Info: SGS-THOMSON SGS125 SILICON PNP POWER DARLINGTON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . PNP DARLINGTON . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION . GENERAL PURPOSE SWITCHING DESCRIPTION The SGS125 is a silicon epitaxial-base PNP transistor in monolithic Darlington configuration in

Contextual Info: BU806/807 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR FAST SWITCHING DARLINGTON TRANSISTOR HIGH VOLTAGE DARLINGTON TRANSISTOR USING IN HORIZONTAL OUTPUT STAGES OF 110° CRT VIDEO DISPLAYS BUILT-IN SPEED-UP Diode Between Base and Emitter ABSOLUTE MAXIMUM RATINGS

td62104p

Contextual Info: TOSHIBA TD62101,103~105P/F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62101P, TD62101F, TD62103P, TD62103F TD62104P, TD62104F, TD62105P, TD62105F 7CH DARLINGTON SINK DRIVER The TD62101P/ F series are high-voltage, high-current darlington drivers comprised of seven NPN darlington

BU806 MOTOROLA

Abstract: BU806 motorola darlington power transistor NT 407 F TRANSISTOR 221A-06 transistor j 127
Contextual Info: MOTOROLA Order this document by BU806/D SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal

Contextual Info: TOSHIBA TD62101,103~105P/F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62101P, TD62101F, TD62103P, TD62103F TD62104P, TD62104F, TD62105P, TD62105F 7CH DARLINGTON SINK DRIVER The TD62101P/ F series are high-voltage, high-current darlington drivers comprised of seven NPN darlington

Contextual Info: TD62101,103~105P/F TOSHIBA TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62101P, TD62101F, TD62103P, TD62103F TD62104P, TD62104F, TD62105P, TD62105F 7CH DARLINGTON SINK DRIVER The TD62101P/F series are high-voltage, high-current darlington drivers comprised of seven NPN darlington

Contextual Info: T O SH IB A TD62064BP-1/BF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62064BP-1r TD62064BF 4ch HIGH-CURRENT DARLINGTON SINK DRIVER The TD62064BP-1 and TD62064BF are high-voltage, highcurrent darlington drivers comprised of four NPN darlington pairs.

Contextual Info: TO SH IB A TD62003,004FB TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62003FB, TD62004FB 7CH DARLINGTON SINK DRIVER The TD62003FB series are high-voltage, high-current darlington drivers comprised of seven NPN darlington pairs. All units feature integral clamp diodes for switching

MJ10000

Abstract: MJ10001 1N4937 voltage regulators 6 amp to3
Contextual Info: MOTOROLA Order this document by MJ10000/D SEMICONDUCTOR TECHNICAL DATA MJ10000 Designer's  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS The MJ10000 Darlington transistor is designed for high–voltage, high–speed,

Contextual Info: SGS-THOMSON iMiniSiRitaignigfafiRiOBinieg BD336 SILICON PNP POWER DARLINGTON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . PNP DARLINGTON . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS . GENERAL PURPOSE SWITCHING . GENERAL PURPOSE AMPLIFIERS

NPN Transistor 2N3055 darlington

Abstract: lambda LAS PMD 1000 stc transistors series 2N3055 4D ic 810 2N3055 series voltage regulator 2N3055 PMD12K40 2N3055-2
Contextual Info: • High power, high gain Darlington transistors • VcEO 40V, 60V, 80V, 100V PMD 10K,11K,12K,13K, 16K,17K Darlington transistors CASE T E M P E R A T U R E T c 75°C • The only glass passivated 200°C operating junction tem perature Darlington power transistor range

Contextual Info: SCS-THOMSON [IDÜMiLiCTIM « SGSD100 SGSD200 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . MONOLITHIC DARLINGTON CONFIGURATION APPLICATIONS: . GENERAL PURPOSE SWITCHING APPLICATION

Contextual Info: BU808DFI HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON • STMicroelectronics PREFERRED SALESTYPE . NPN DARLINGTON WITH INTEGRATED ANTI PARALLEL COLLECTOR-EMITTER DIODE . HIGH VOLTAGE CAPABILITY . HIGH DC CURRENT GAIN . U.L. RECOGNISED ISOWATT218 PACKAGE

Contextual Info: BDX87C SILICON NPN POWER DARLINGTON TRANSISTOR . MONOLITHIC DARLINGTON CONFIGURATION . INTEGRATED ANTI PARALLEL COLLECTOR-EMITTER DIODE APPLICATION . GENERAL PURPOSE SWITCHING . GENERAL PURPOSE AMPLIFIERS 2 DESCRIPTION The BDX87C is a silicon Epitaxial-Base NPN

PNP TRANSISTOR SOT89

Abstract: PXTA14 BP317 PXTA64
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PXTA64 PNP Darlington transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 24 Philips Semiconductors Product specification PNP Darlington transistor

Contextual Info: MOTOROLA Order this document by 2N6056/D SEMICONDUCTOR TECHNICAL DATA 2N6056 NPN Darlington Silicon Power Transistor Motorola Preferred Device . . . designed for general–purpose amplifier and low frequency switching applications. DARLINGTON 8 AMPERE SILICON