DATA SHEET LD 271 Search Results

Contextual Info: Data sheet. SAK Series KDKS1/EN LD 24 VAC Weidmüller Interface GmbH & Co. KG Klingenbergstraße 16 D-32758 Detmold Germany Fon: +49 5231 14-0 Fax: +49 5231 14-292083 www.weidmueller.com The fuse terminals of the Weidmüller SAK series are available in two different forms:

s50240

Abstract: S10430 keyer
Contextual Info: AMI * A S u b s id ia r y o f G o u ld Inc. Preliminary Data Sheet S10430 Features General Description □ □ □ □ □ □ □ □ T he S10430 divlder-keyer is a m o n o lith ic Integrated c ir­ c u it fab rica ted w ith P-C hannel ion-im planted M O S te ch ­

Contextual Info: F L A S H Io g ic Programmable Logic Device Family Data Sheet June 1996, ver. 2 Features. • ■ ■ H ig h -p erform an ce p ro g ram m ab le logic d ev ice P LD fam ily SR A M -based logic w ith sh ad ow FL A SH m em o ry elem ents fabricated on ad van ced C M O S tech nolog y

K2479

Abstract: 2sk2479
Contextual Info: DATA SHEET NEC / MOS FIELD EFFECT TRANSISTOR _ 2SK2479 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE D ESCRIPTION T h e 2S K2479 is N -C h a n n e l M O S F ie ld E ffe c t T ra n s is to r d e ­ s ig n e d f o r h ig h v o lta g e s w itc h in g a p p lic a tio n s .

Contextual Info: Opto Semiconductors GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 271, LD 271 H LD 271 L, LD 271 HL Area not flat Approx. weight 0.5 g Cathode 5.9 ' 5.5 . ri Q _ LO _ _ o .e 0.4 GE006645 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

LD271 IR LED

Abstract: data sheet ld 271 OPTO LD 271 H LD271 APPLICATIONS LD271 remote control infrared remote switch IR LD271 ld 1.8 ld 18 LD271
Contextual Info: Opto Semiconductors GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 271, LD 271 H LD 271 L, LD 271 HL Area not flat 9.0 8.2 7.8 7.5 5.9 5.5 ø5.1 ø4.8 1.0 0.7 1.8 1.2 14.0 13.0 0.6 0.4 4.8 4.2 11.4 11.0 Cathode Chip position fex06628 1.3 1.0 2.54 mm spacing

1550 nm CW Lasers

Abstract: Fujikura butterfly nm-1510 pump laser 14xx
Contextual Info: Preliminary Data Sheet August 2002 271-Type 14xx nm Pump Laser Module Description The 271-type pump laser module operates up to 200 mW and is designed as a continuous-wave CW optical pump source for DWDM erbium-doped fiber amplifiers and Raman applications.

NX8350TSxx

Abstract: NX8350TS PX10160E 10 gb laser diode
Contextual Info: Preliminary Data Sheet NX8350TS LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION R08DS0025EJ0100 Rev.1.00 Sep 19, 2010 DESCRIPTION The NX8350TS is a 1 271 to 1 331 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser

adsl splitter dslam circuit diagram

Abstract: ADSL MODEM PROGRAMMING CX20441-11 DSAR-L100-511 schematic adsl modem board ADSL Modem circuit diagram LDPC encoder decoder ip core schematic diagram modem adsl BDP20 conexant
Contextual Info: AccessRunner ADSL-Ethernet/USB Modem Device Set Scalable, Discrete Multitone-based, T1.413 Issue 2, G.992.1 G.dmt , and G.992.2 (G.lite) ADSL Modem Device Set Data Sheet (Preliminary) Conexant Proprietary Information Doc. No. 100670A June 30, 2000 AccessRunner ADSL-Ethernet/USB Modem Device Set Data Sheet

ADSL Modem circuit diagram of data communication

Abstract: ADSL modem schematics schematic adsl modem board ADSL Modem circuit diagram hc02 fairchild ADSL MODEM PROGRAMMING LDPC encoder decoder ip core HAD08 adsl splitter dslam circuit diagram p5200
Contextual Info: AccessRunner ADSL-USB Modem Device Set Scalable, Discrete Multitone-based, T1.413 Issue 2, G.992.1 G.dmt , and G.992.2 (G.lite) - Compliant ADSL Modem Device Set Data Sheet Conexant Proprietary Information Doc. No. 100427B May 4, 2000 AccessRunner ADSL-USB Modem Device Set Data Sheet

Contextual Info: JANSR2N7408 Data Sheet Formerly Available As FSF450R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs December 1998 File N um ber 4637 Features • 9A, 500V, rog oi\| = 0.600Q • Total Dose The Discrete Products Operation of Harris Semiconductor

Contextual Info: FSYE430D, FSYE430R June 1999 Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor Communications Division has developed a series of Radiation Hardened MOSFETs specifically designed for

max6239

Contextual Info: FSTJ9055D, FSTJ9055R Data Sheet Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Harris has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

1 L 0380 R

Contextual Info: FSYA150D, FSYA150R Semiconductor January 1999 Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

Contextual Info: TH7122 27 to 930MHz FSK/FM/ASK Transceiver Features 1 Single chip solution with only a few external components 1 Stand-alone fixed-frequency user mode 1 Programmable multi-channel user mode 1 Low current consumption in active mode and very low standby current

68A316E

Abstract: MCM2716
Contextual Info: M O TO R O LA 2048 x 8-BIT UV ERASABLE PROM MOS N -C H A N N E L, SILIC O N -G A TE T he M C M 2716 is a 16,384-bit Erasable and Electrically R eprogram ­ m able PR OM designed fo r system deb ug usage and s im ilar a p p lica tions requiring non vo la tile m em o ry th a t co u ld be reprogram m ed periodically.

Contextual Info: TH71221 27 to 930MHz FSK/FM/ASK Transceiver Features 1 3wire bus serial control interface 1 FSK/ASK mode selection 1 FSK for digital data or FM for analog signal reception 1 RSSI output for signal strength indication and ASK reception 1 Peak detector for ASK detection

Contextual Info: FSYA150D, FSYA150R S e m iconductor January 1999 Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

Contextual Info: FSJ9055D, FSJ9055R tfV W S Ju ly 1999 p O S S '^ fj|0 5 5 O Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

Contextual Info: FSL13A0D, FSL13A0R D ata S h eet 9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs T h e D iscrete Products O pe ra tio n of Harris has d evelo ped a se ries of R adiation H a rd e n e d M O S F E T s specifically desig n ed for com m ercial and m ilitary s p a c e applications.

Contextual Info: JANSR2N7407 S em iconductor Data Sheet Formerly Available As FSF254R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs December 1998 File N um ber 4636 Features • 18A, 250V, rog oi\| = 0.170Q • Total Dose The Discrete Products Operation of Harris Semiconductor

Contextual Info: FSL23A0D, FSL23A0R D ata S h eet 6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs June 1999 F ile N u m b er 4476.2 Features • 6A , 2 0 0 V , rQg ONi = 0.350J2 • Total D ose T h e D iscrete Products O pe ra tio n of Harris Corporation,

DO214AA

Abstract: SG-250 mount
Contextual Info: SGT Series Semiconductor February 1999 Data Sheet PRELIMINARY Surface Mount Surgector Transient Voltage Suppressors File Num ber 4632 Features The Harris S urgector fam ily has been extended to include a series of tw o-term inal surface mount devices as described

Contextual Info: FSYA450D, FSYA450R Semiconductor March 1999 Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space