DATASHEET IC 7400 Search Results

Contextual Info: L9678 L9678-S User configurable airbag IC Datasheet - production data • Squib deployment drivers – 4 channel HSD/LSD – 25 V maximum deployment voltage – 1.2 A @ 2 ms and 1.75 A @ 0.5/0.7 ms deployment profiles – Integrated safing FET linear regulator,

JFET TRANSISTOR REPLACEMENT GUIDE j201

Abstract: UA6538 DC motor speed control using 555 and ir sensor U2740B-FP UAA145 CQY80 U2840B tcrt9050 TCDF1910 sod80 smd zener diode color band
Contextual Info: Semiconductors Technical Library March 1996 Back Products Overview Communications Automotive Computer Industrial Broadcast Media Aerospace & Defense Communications Applications Telephone ICs Type U3750BM–CP Package 44–pin PLCC Function One chip telephone

Contextual Info: Datasheet Small-sized Class-D Speaker Amplifiers Filter-Less Class-D Monaural Speaker Amplifier BD27400GUL Key Specifications Circuit current No signal Circuit current(Stand by) Output Power RL=8 Output Power RL=4 Start-up time General Description BD27400GUL is a low voltage drive class-D monaural

Contextual Info: Datasheet Small-sized Class-D Speaker Amplifiers Filter-Less Class-D Monaural Speaker Amplifier BD27400GUL ●Key Specifications • Circuit current No signal ■ Circuit current(Stand by) ■ Output Power（RL=8Ω） ■ Output Power（RL=4Ω） ■ Start-up time

Contextual Info: Datasheet Small-sized Class-D Speaker Amplifiers Filter-Less Class-D Monaural Speaker Amplifier BD27400GUL ●Key Specifications • Circuit current No signal ■ Circuit current(Stand by) ■ Output Power（RL=8Ω） ■ Output Power（RL=4Ω） ■ Start-up time

Contextual Info: Datasheet Small-sized Class-D Speaker Amplifiers Filter-Less Class-D Monaural Speaker Amplifier BD27400GUL ●Key Specifications • Circuit current No signal ■ Circuit current(Stand by) ■ Output Power（RL=8Ω） ■ Output Power（RL=4Ω） ■ Start-up time

70L95

Abstract: 80L95 VC555 DM54365 DM54366 DM54367 DM54368 70L96 80L97
Contextual Info: ^ 2 Additional Devices D M 70/D M 8095, L95, 96, L96, 97, L97, 98, L98 TRI-STATE Hex Buffers www .Datasheet. i n General Description These devices provide six, two-input buffers in each pack­ age. Both the standard 7400 com patible TTL technology, and the “ true tenth-pow er" (74L com patible) low power ver­

DIM1600FSS17-A000

Contextual Info: DIM1600FSS17-A000 Single Switch IGBT Module DS5833-1.0 June 2005 FEATURES • 10µs Short Circuit Withstand • Non Punch Through Silicon • Isolated Copper Baseplate • Lead Free construction KEY PARAMETERS VCES VCE sat * (typ) IC (max) IC(PK) (max) (LN23957)

data sheet IC 7400

Abstract: IC 7400 datasheet information OF ic 7400 DIM1600FSM17-A000
Contextual Info: DIM1600FSM17- A000 Single Switch IGBT Module DS5455-3.2 August 2008 LN26327 FEATURES Isolated AlSiC Base with AIN Substrates KEY PARAMETERS VCES VCE (sat)* (typ) IC (max) IC(PK) (max) High Thermal Cycling Capability * 10µs Short Circuit Withstand Non Punch Through Silicon

IC 7400 datasheet

Abstract: data sheet 7400 IC data sheet IC 7400 internal circuit diagram of 7400 IC DIM600XSM45-F000 110nF
Contextual Info: Preliminary Data DIM600XSM45-F000 Single Switch IGBT Module DS5874-1.0 October 2005 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Lead Free construction • Isolated MMC Base with AlN Substrates • High Thermal Cycling Capability

Contextual Info: DIM1600FSM17-A000 DIM1600FSM17-A000 Single Switch IGBT Module Preliminary Information DS5455-1.1 May 2001 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates

ge traction motor

Abstract: DIM600XSM45-F000
Contextual Info: DIM600XSM45-F000 Single Switch IGBT Module DS5874-1.1 August 2006 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Lead Free construction • Isolated MMC Base with AlN Substrates • High Thermal Cycling Capability • High isolation module

internal diagram of 7400 IC

Abstract: DIM1600FSM17-A000
Contextual Info: DIM1600FSM17-A000 DIM1600FSM17-A000 Single Switch IGBT Module Replaces March 2002, version DS5455-2.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5455-2.1 May 2002

DIM1600FSM17-A000

Abstract: DS5455-2
Contextual Info: DIM1600FSM17-A000 DIM1600FSM17-A000 Single Switch IGBT Module Replaces May 2001, version DS5455-1.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5455-2.0 March 2002

DIM1600FSM17-A000

Contextual Info: DIM1600FSM17-A000 DIM1600FSM17-A000 Single Switch IGBT Module Replaces May 2002, version DS5455-2.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5455-3.1 July 2002

12v 300W AUDIO AMPLIFIER CIRCUIT DIAGRAM

Contextual Info: Datasheet – BLADE IN81 Indice Semiconductor Pty Ltd Blade Power Amplifier Module Features • • • • • Applications THD: <0.003% SNR: 122dB typical Differential audio input Module dimensions: 24mm x 22mm SMT Mounting • • • AV home audio, iPod docks, linear

MSM7731-02

Abstract: P-BGA313-3535-1 TBA 931 MsM82C59 MSM66 arm processor msm5299 SSOP20-P-250-0 QFJ28-P-S450-1 MSM65524A
Contextual Info: Datasheet CD-ROM Ver 1.23, July 1999 Bay of Islands, New Zealand Attention Please! People to People Technology 1. Regarding Operation • This is NOT a music CD. Please do not play it on an ordinary music CD player. It may cause damage to your ears and loudspeakers.

NTE7232

Abstract: NTE2682 NTE2684 NTE7239 pdf/ES-F8DB-14A464-A
Contextual Info: NTE SEMICONDUCTORS ADDED SINCE MAY 2013 NTE PART NO. DESCRIPTION Datasheet Link NTE573-1 RECTIFIERS Schottky Barrier Rectifier, 100V, 5 Amp, DO‐201AD Case NTE573‐2 Schottky Barrier Rectifier, 200V, 5 Amp, DO‐201AD Case

GA100NA60UP

Contextual Info: GA100NA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

29070* intel

Contextual Info: 1.8 Volt Intel Wireless Flash Memory with 3-Volt I/O W30 28F640W30, 28F320W30, 28F128W30 Datasheet Product Features • High Performance Read-While-Write/Erase — Burst Frequency at 40 MHz — 70 ns Initial Access Speed — 25 ns Page-Mode Read Speed

application notes igbt induction heating

Abstract: VS-GA100NA60UP
Contextual Info: VS-GA100NA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

VS-GA100NA60UP

Contextual Info: VS-GA100NA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

VS-GA100NA60UP

Contextual Info: VS-GA100NA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

application notes igbt induction heating

Abstract: VS-GA100NA60UP
Contextual Info: VS-GA100NA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses