DATASHEET IRF840 MOSFET Search Results

Application of irf840

Abstract: TRANSISTOR mosfet IRF840 datasheet irf840 mosfet diode 400V 4A irf840 equivalent power supply IRF840 APPLICATION IRF840 MOSFET irf840 power supply transistor irf840 IRF840 and its equivalent
Contextual Info: IRF840 Data Sheet January 2002 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET Features • 8A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

TRANSISTOR mosfet IRF840

Abstract: IRF840 application note Switching Application of irf840
Contextual Info: IRF840 Data Sheet Title F84 bt A, 0V, 50 m, 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration

IRF840PBF

Contextual Info: IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration

Contextual Info: IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration

Contextual Info: IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration

Contextual Info: IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration

Contextual Info: IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration

Application of irf840

Abstract: IRF840PBF SiHF840 IRF840 SiHF840-E3 irf840 vishay
Contextual Info: IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration

Contextual Info: IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration

Application of irf840

Contextual Info: IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration

IRF840

Abstract: Application of irf840 MOSFET IRF840 datasheet irf840 mosfet transistor irf840 IRF8401 SCHEMATIC irf840
Contextual Info: IRF840 N-CHANNEL 500V - 0.75Ω - 8A TO-220 PowerMesh II MOSFET TYPE IRF840 • ■ ■ ■ ■ VDSS RDS on ID 500 V < 0.85 Ω 8A TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

IRF840

Abstract: Application of irf840 datasheet irf840 mosfet datasheet mosfet irf840 st irf840 2c14 mosfet
Contextual Info: IRF840 N-CHANNEL 500V - 0.75Ω - 8A TO-220 PowerMesh II MOSFET TYPE IRF840 • ■ ■ ■ ■ VDSS RDS on ID 500 V < 0.85 Ω 8A TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

IRF840

Abstract: irf840n high voltage pulse with irf840 SWITCHING WELDING SCHEMATIC BY MOSFET IRF840 N
Contextual Info: IRF840 N - CHANNEL 500V - 0.75Ω - 8A - TO-220 PowerMESH MOSFET TYPE IRF840 • ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.85 Ω 8A TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED

power MOSFET IRF840

Abstract: IRF840
Contextual Info: IRF840 N-CHANNEL 500V - 0.75Ω - 8A TO-220 PowerMesh II MOSFET TYPE IRF840 • ■ ■ ■ ■ VDSS RDS on ID 500 V < 0.85 Ω 8A TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

Contextual Info: IRF840 N - CHANNEL 500V - 0.75ft - 8A - TO-220 PowerMESH MOSFET TYPE I R F 84 0 V dss 500 V R d S o ii < 0.8 5 Q. Id 8 A . • TYPICAL RDS(on) = 0.75 EXTREMELY HIGH dv/dt CAPABILITY . 100% AVALANCHE TESTED . VERY LOW INTRINSIC CAPACITANCES . GATE CHARGE MINIMIZED

Contextual Info: IRF840 Advanced Power MOSFET FEATURES - 500 V ^DS on = 0.85Q B ^D S S > a ♦ Lower Input Capacitance II ♦ Rugged Gate Oxide Technology 00 ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 500V

sec irf840

Contextual Info: $GYDQFHG 3RZHU 026 7 IRF840 FEATURES BVDSS = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.85Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 8 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V

Contextual Info: TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH-SPEED MOSFET DRIVERS SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997 D D D D D D TPS2811, TPS2812, TPS2813 . . . D, P, AND PW PACKAGES TOP VIEW Industry-Standard Driver Replacement 25-ns Max Rise/Fall Times and 40-ns Max

013D3

Abstract: RUR1560 UHC MOS Application of irf840 equivalent irf840 irf840 equivalent irf840 power supply mos 7121 power diode 600V 15A IRF840
Contextual Info: RUR1S1560S September 2002 Data Sheet [ /Title HUF7 6013P 3, HUF76 013D3 S /Subject (20A, 20V, 0.022 Ohm, NChannel, Logic Level Power MOSFETs) /Autho r () /Keywords (Intersil, Semiconductor, NChannel, Logic Level UltraF ET Power MOS- 15A, 600V Ultrafast Diode

UHC MOS

Abstract: RUR1S1560S9A INTERSIL Cross Reference Search 013D3
Contextual Info: RUR1S1560S September 2002 Data Sheet [ /Title HUF7 6013P 3, HUF76 013D3 S /Subject (20A, 20V, 0.022 Ohm, NChannel, Logic Level Power MOSFETs) /Autho r () /Keywords (Intersil, Semiconductor, NChannel, Logic Level UltraF ET Power MOS- 15A, 600V Ultrafast Diode

TPS2814

Abstract: A5830 power supply IRF840 APPLICATION Application of irf840 irf840 power supply MARCON NH capacitor mosfet driver 20mA TDK diodes S100 D TI 2812 A5930
Contextual Info: TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH-SPEED MOSFET DRIVERS ^ _ SLVS132B - NOVEMBER 1995 - REVISED AUGUST 1996 • • Industry-Standard Driver Replacement 20-ns Max Rise/Fall Times and 30-ns Max Propagation Delay - 1-nF Load

5000 v pulse driver with irf840

Contextual Info: TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGHĆSPEED MOSFET DRIVERS SLVS132F − NOVEMBER 1995 − REVISED OCTOBER 2004 D Industry-Standard Driver Replacement D 25-ns Max Rise/Fall Times and 40-ns Max TPS2811, TPS2812, TPS2813 . PACKAGES TOP VIEW

8pin Dual High-Speed Power MOSFET Drivers

Contextual Info: TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGHĆSPEED MOSFET DRIVERS SLVS132F − NOVEMBER 1995 − REVISED OCTOBER 2004 D Industry-Standard Driver Replacement D 25-ns Max Rise/Fall Times and 40-ns Max TPS2811, TPS2812, TPS2813 . PACKAGES TOP VIEW