DATASHEET OF 2N2905 Search Results

of 2n2905

Abstract: 2N2905 equivalent 2N2905 transistor transistor 2N2905 2N2905
Contextual Info: 2N2905 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)

2N2905AL

Contextual Info: 2N2905AL Dimensions in mm inches . 8.51 (0.34) 9.40 (0.37) Bipolar PNP Device in a Hermetically sealed TO5 Metal Package. 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. Bipolar PNP Device. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021)

Contextual Info: 2N2905ACSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

Contextual Info: 2N2905 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)

2n2905

Contextual Info: 2N2905 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)

TO-205AA

Abstract: 2N2905L TO205AA
Contextual Info: 2N2905L Dimensions in mm inches . 8.51 (0.34) 9.40 (0.37) Bipolar PNP Device in a Hermetically sealed TO5 Metal Package. 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. Bipolar PNP Device. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.

Contextual Info: 2N2905ACSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

2N2905

Contextual Info: 2N2905AHR Hi-Rel PNP bipolar transistor 60 V, 0.6 A Datasheet — production data Features BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics

2N2905At

Contextual Info: 2N2905AHR Hi-Rel PNP bipolar transistor 60 V, 0.6 A Datasheet — production data Features BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics

2N2905AT1

Contextual Info: 2N2905AHR PNP low power transistors for Hi-Rel applications Features • Low voltage ■ Low current ■ Linear gain characteristics Applications ■ Low current switching ■ Linear preamplifier TO-39 Description The 2N2905AHR is a silicon planar epitaxial PNP

Contextual Info: 2N2905AHR Hi-Rel PNP bipolar transistor 60 V - 0.6 A Features BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL

2N2905AT1

Abstract: 2N2905AHR st marking code
Contextual Info: 2N2905AHR Hi-Rel PNP bipolar transistor 60 V - 0.6 A Features BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL

DMF50081NB-FW

Abstract: alps lcd 14 pin DMF50081N DC-AC Power Inverter schematic alps LCD lcd inverter board schematic sharp lm32p10 optrex lcd schematic diagram dc-ac inverter 14 pin lcd
Contextual Info: N Using an LCD with the NS486SXF Evaluation Board NS486SXF Application Note Version 1.0 April 22, 1997 Michael C. Draeger Senior Software Engineer National Semiconductor Corporation Contents Introduction . 3

lf411

Abstract: LM741 NPN-2N2219 LH0094 2N2905 NATIONAL
Contextual Info: LF411 Low Offset, Low Drift JFET Input Operational Amplifier General Description Features These devices are low cost, high speed, JFET input operational amplifiers with very low input offset voltage and guaranteed input offset voltage drift. They require low supply

lf411

Contextual Info: LF411 Low Offset, Low Drift JFET Input Operational Amplifier General Description Features These devices are low cost, high speed, JFET input operational amplifiers with very low input offset voltage and guaranteed input offset voltage drift. They require low supply current yet maintain a large gain bandwidth product and fast

1N6762

Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
Contextual Info: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index

Contextual Info: LT1014, LT1014A, LT1014D QUAD PRECISION OPERATIONAL AMPLIFIERS SLOS039C – JULY 1989 – REVISED SEPTEMBER 1999 D D D D D D D D DW PACKAGE TOP VIEW Single-Supply Operation: Input Voltage Range Extends to Ground, and Output Swings to Ground While Sinking Current

lm358 application note

Abstract: LT1013A LT1013 equivalent
Contextual Info: LT1013, LT1013A, LT1013D, LT1013Y DUAL PRECISION OPERATIONAL AMPLIFIERS SLOS018B – MAY 1988 – REVISED OCTOBER 1996 D D D D D 1IN + VCC – 2IN + 2IN – 8 2 7 3 6 4 5 1IN – 1OUT VCC + 2OUT FK PACKAGE TOP VIEW NC 1IN – NC 1IN + NC description The LT1013 is a dual precision operational

Contextual Info: 25µA Micropower Voltage References ISL21070 Features The ISL21070 voltage references are analog voltage references featuring low supply voltage operation at ultra-low 25µA max operating current. • Reference output voltage . . . . . . . . . 0.600V, 2.048V, 2.500V

Contextual Info: 25µA Micropower Voltage References ISL21070 Features The ISL21070 voltage references are analog voltage references featuring low supply voltage operation at ultra-low 25µA max operating current. • Reference output voltage . . . . . . . . . 0.600V, 2.048V, 2.500V

2n2222 spice model

Contextual Info: 2N7637-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 170 mΩ ID (Tc = 25°C) = 20 A hFE (Tc = 25°C) = Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate

Contextual Info: 2N7636-GA Normally – OFF Silicon Carbide Junction Transistor Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate Gate Oxide Free SiC Switch Exceptional Safe Operating Area

Contextual Info: 2N7638-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 170 mΩ ID (Tc = 25°C) = 20 A hFE (Tc = 25°C) = Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate

LM741

Abstract: LH0094
Contextual Info: LF411 Low Offset, Low Drift JFET Input Operational Amplifier General Description Features These devices are low cost, high speed, JFET input operational amplifiers with very low input offset voltage and guaranteed input offset voltage drift. They require low supply current yet maintain a large gain bandwidth product and fast