DATASHEET SE 130 N Search Results

Contextual Info: Connection Diagram 4148 4148SE 3 3 3 3 5H 2 1 1 4148CC MARKING 5H MMBD4148CA D6 MMBD4148 MMBD4148CC D5 MMBD4148SE D4 SOT-23 2 1 1 2 3 3 2 1 1 4148CA 2 Small Signal Diode Absolute Maximum Ratings * Symbol VRRM TA = 25°C unless otherwise noted Parameter Maximum Repetitive Reverse Voltage

4148CA

Abstract: 4148SE MMBD4148 MMBD4148CA MMBD4148CC MMBD4148SE
Contextual Info: Connection Diagram 4148 4148SE 3 3 3 3 5H 2 1 1 4148CC MARKING 5H MMBD4148CA D6 MMBD4148 MMBD4148CC D5 MMBD4148SE D4 SOT-23 2 1 1 2 3 3 2 1 1 4148CA 2 Small Signal Diode Absolute Maximum Ratings * TA = 25°C unless otherwise noted Symbol VRRM Parameter Maximum Repetitive Reverse Voltage

Contextual Info: TAK CHEONG Lic e n se d b y O N Se m ic o nd uc to r, A tra d e m a rk o f se m ic o nd uc to r C o m p o n e n ts In d u strie s, LLC f o r Ze ne r Te c hno lo g y a n d Pro d uc ts. 5 0 0 m W D O- 3 5 H e r m e t ica lly Se a le d Gla ss Ze n e r Volt a ge

Contextual Info: ^\7stn s i t r o n _ SEMICONDUCTOR SHD SERIES SURFACE MOUNT SCHOTTKY RECTIFIERS TECHNICAL DATA DATASHEET 134 R E V IS IO N — HERMETIC SURFACE MOUNT POWER SCHOTTKY RECTIFIERS FEATURES • LOW COST. • LOW INDUCTANCE. • • • • LOW Vp LOW THERMAL RESISTANCE.

T6718

Contextual Info: SM-8 COMPLEMENTARY MEDIUM POWER HIGH GAIN TRANSISTORS ZDT6718 ISSUE 1 - NOVEMBER 1995 Cl I -I C- I I C2 L I. c2 L I- - 1—1 Bi —I—I NPN I - I Ei — LI ZO B2 E2 pnp PARTMARKING DETAIL - T6718 ABSOLUTE MAXIMUM RATINGS.

Contextual Info: Non-promotional not for new designs FTR-K1 SERIES POWER RELAY 1 POLE - 1/3/5/10A Medium Load Control LZ Series n FEATURES UL, CSA, SEV recognized Contact rating types - Low level to 10 amps switching l Standard and high sensitivity types available l High surge strength version available

600va ups

Abstract: lz 01 hp 600va ups Fujitsu LZ lz 150 190VA LZ-HSE diode 77G
Contextual Info: FTR-K1 SERIES POWER RELAY 1 POLE - 1/3/5/10A Medium Load Control LZ Series n FEATURES UL, CSA, SEV recognized l Contact rating types - Low level to 10 amps switching l Standard and high sensitivity types available l High surge strength version available l

Contextual Info: DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUITS uPC2757T, ¿¿PC2758T SILICON MMIC 1st FREQUENCY DOWN-CONVERTER FOR MOBILE COMMUNICATIONS DESCRIPTION T he ^¡PC 2757T and ^¡PC 2758T are silicon m o n o lith ic in te g ra te d circu its d e sig n e d as 1st d o w n -co n ve rte rs fo r L

Contextual Info: BD439/441 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO -126 • Complement to BD440, BD442 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage Symbol BD439 Rating VcBO BD441 Collector Emitter Voltage

Contextual Info: Li cen sed b y O N Se m i co n d u ct o r , A t r adem ar k of se m icon d u ct or Co m p o n e n t s I n du st r ies, LLC for Z e n e r Te ch n olog y and Pr od u ct s. TAK CHEONG 1 .3 W a t t D O- 4 1 H e r m e t ica lly Se a le d Gla ss Ze n e r Volt a ge

IRG4BC20U

Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1448A IRG4BC20U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

IRGPF50F

Abstract: al c269
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.767A IRGPF50F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve

IRLIZ34N

Abstract: MOSFET IRF 630
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1329A IRLIZ34N PRELIMINARY HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated

zener diode, zl 33

Abstract: 20v surface mount zener
Contextual Info: SE MICO NDU C TOR 200mW SOD-323 SURFACE MOUNT Small Outline Flat Lead Plastic Package Zener Voltage Regulators Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter Units 200 mW TSTG Storage Temperature Range -65 to +150 °C TOPR Operating Temperature Range

sod-323 Marking ZD

Contextual Info: SE MICO NDU C TOR 200mW SOD-323 SURFACE MOUNT Small Outline Flat Lead Plastic Package Zener Voltage Regulators Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter Units 200 mW TSTG Storage Temperature Range -65 to +150 °C TOPR Operating Temperature Range

GAL22V10D-25QP equivalent

Abstract: GAL22V10D-15QJN GAL22V10D GAL22V10D-15LPN gal22v10d25lpn GAL22V10D 15qjn GAL22V10D-10QPN GAL22V10D-15LPNI GAL22V10D-10LPI GAL22V10D15LPI
Contextual Info: GAL 22V10 Device Datasheet June 2010 Select Devices Discontinued! Product Change Notifications PCNs have been issued to discontinue select devices in this data sheet. The original datasheet pages have not been modified and do not reflect those changes.

Contextual Info: TAK CHEONG Lic e n se d b y O N Se m ic o nd uc to r, A tra d e m a rk o f se m ic o nd uc to r C o m p o n e n ts In d u strie s, LLC f o r Ze ne r Te c hno lo g y a n d Pro d uc ts. 5 0 0 m W D O- 3 5 H e r m e t ica lly Se a le d Gla ss Ze n e r Volt a ge

irfp45

Contextual Info: IRFP450 Advanced Power MOSFET FEATURES BV dss = 500 V ♦ A va la n ch e Rugged T e ch n o lo g y ♦ ^D S o n = Rugged G ate O xide T e ch n o lo g y ♦ Low er Input C apa citance ♦ lD = 0 .4 Q 14 A Im proved G ate C harge ♦ Extended Safe O pe ra ting A re a

Contextual Info: IRFP450A Advanced Power MOSFET FEATURES BV dss = 500 V ♦ A va la n ch e Rugged T e ch n o lo g y ♦ ^D S o n = Rugged G ate O xide T e ch n o lo g y ♦ Low er Input C apa citance lD = ♦ Im proved G ate C harge ♦ Extended Safe O pe ra ting A re a

IRG4BC30UD

Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1453 IRG4BC30UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

IRLZ24N

Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1357A IRLZ24N PRELIMINARY HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V

1838t

Abstract: 1838 T D-10 IRGPH50MD2 C-483 C483 SE 135 N se 130 n
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1047A IRGPH50MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT Features C VCES = 1200V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses

irl3803 equivalent

Abstract: 71A marking IRL3803 IRLI3803 irf 680 MOSFET 150 N IRF
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1320A IRLI3803 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm

sef730

Abstract: 8a22a
Contextual Info: S G S-THOMSON Û7E D g 7^2^237 . 0 7 » 3<%- 1 J 7 3 C .1 7 5 4 2 a u HIGH SP EED SW IT C H IN G A P P L IC A T IO N S A B SO L U T E M A X IM U M R A T IN G S V qs ^DGR V qs •d m ! * P,o, ^stg T| Drain-source voltage VGS = 0) Drain-gate voltage (RGS = 2 0 K O )