1N5819CSM4
Abstract: No abstract text available
Text: SCHOTTKY RECTIFIER DIODE 1N5819CSM4 • Hermetic Ceramic Surface Mount Package MO-041BA • VRRM = 40V, IF = 1.0A • Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VRRM VRWM IF(AV)
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1N5819CSM4
MO-041BA)
100mA
1N5819CSM4-JQRS
1N5819CSM4
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q217
Abstract: No abstract text available
Text: SCHOTTKY RECTIFIER DIODE 1N5819CSM4 • Hermetic Ceramic Surface Mount Package MO-041BA • VRRM = 40V, IF = 1.0A • Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VRRM VRWM IF(AV)
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1N5819CSM4
MO-041BA)
100mA
1N5819CSM4-JQRS
q217
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Untitled
Abstract: No abstract text available
Text: 1N5819-1 and 1N5819UR-1 Standard HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 193, REV. C.2 AVAILABLE AS 1N5819-1, 1N5819UR-1 JAN EQUIVALENT: SJ5819-1/SJ5819UR-1* SV5819-1/SV5819UR-1* SX5819-1/SX5819UR-1*
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1N5819-1
1N5819UR-1
1N5819-1,
SJ5819-1/SJ5819UR-1*
SV5819-1/SV5819UR-1*
SX5819-1/SX5819UR-1*
SS5819-1/SS5819UR-1*
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1N5819UR-1
Abstract: 1n5819 melf 1N5819-1 DO-213AB 1N5819UR1
Text: 1N5819-1 1N5819UR-1 SENSITRON SEMICONDUCTOR JAN JANTX JANTXV TECHNICAL DATA DATA SHEET 193, REV. B HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE. o All ratings are at TA = 25 C unless otherwise specified.
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1N5819-1
1N5819UR-1
1N5819UR-1
1n5819 melf
1N5819-1
DO-213AB
1N5819UR1
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1N5819 sensitron
Abstract: 1N5819UR-1 1N5819-1 DO-213AB
Text: 1N5819-1 1N5819UR-1 SENSITRON SEMICONDUCTOR JAN JANTX JANTXV TECHNICAL DATA DATA SHEET 193, REV. C HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE. All ratings are at TA = 25oC unless otherwise specified.
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1N5819-1
1N5819UR-1
1N5819 sensitron
1N5819UR-1
1N5819-1
DO-213AB
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY RECTIFIER DIODE 1N5819D2A / 1N5819D2B • • • • • • High Surge Capability Extremely Fast Switching Low Forward Voltage Hermetic Ceramic Surface Mount Package Designed as a Drop In Replacement for “D-5A” / “B-MELF” Package† For Use in Low Voltage, High Frequency Inverters,
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1N5819D2A
1N5819D2B
1N5819D2A-JQRS
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1N5819DLCC2
Abstract: B-MELF
Text: SCHOTTKY RECTIFIER DIODE 1N5819DLCC2 • • • • • • High Surge Capability Extremely Fast Switching Low Forward Voltage Hermetic Ceramic Surface Mount Package Designed as a Drop In Replacement for “D-5A” / “B-MELF” Package† For Use in Low Voltage, High Frequency Inverters,
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1N5819DLCC2
1N5819D2A-JQRS
1N5819DLCC2
B-MELF
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1N5819* diode
Abstract: LE17 MIL-PRF19500 QR217 1n5819 melf
Text: SCHOTTKY RECTIFIER DIODE 1N5819D2A / 1N5819D2B • • • • • • High Surge Capability Extremely Fast Switching Low Forward Voltage Hermetic Ceramic Surface Mount Package Designed as a Drop In Replacement for “D-5A” / “B-MELF” Package† For Use in Low Voltage, High Frequency Inverters,
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1N5819D2A
1N5819D2B
1N5819D2A-JQRS
1N5819* diode
LE17
MIL-PRF19500
QR217
1n5819 melf
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Untitled
Abstract: No abstract text available
Text: HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| l l Enter Your Part # Home Online Store ¡ Diode s ¡ Transistors ¡ Inte grate d C ircuits ¡ O ptoe le ctronics ¡ Thyristors l Products ¡ Se arch for Parts ¡ R e que st a Q uote ¡ Te st House s
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1N5819
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1N5810 diode
Abstract: 1N5810 DIODE 1N5819 Dip 1N5817 1N5819 DO-204AL JESD22-B102 J-STD-002
Text: 1N5817 - 1N5819 1.0 Amp. Schottky Barrier Rectifier Current 1.0 A Voltage 20 V to 40 V DO-204AL / DO-41 FEATURES Low power losses, high efficiency High surge current capability High frequency operation Guarding for overvoltage protection Low forward voltage drop
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1N5817
1N5819
DO-204AL
DO-41
2002/95/EC
2002/96/EC
DO-41.
MIL-STD-750
J-STD-002
1N5810 diode
1N5810
DIODE 1N5819 Dip
1N5819
JESD22-B102
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1N5810 diode
Abstract: No abstract text available
Text: 1N5817 - 1N5819 1.0 Amp. Schottky Barrier Rectifier Current 1.0 A Voltage 20 V to 40 V DO-204AL DO-41 FEATURES Low power losses, high efficiency High surge current capability High frequency operation Guarding for overvoltage protection Low forward voltage drop
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1N5817
1N5819
DO-204AL
DO-41)
2011/65/EU
2002/96/EC
MIL-STD-750
J-STD-002
1N5810 diode
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DIODE Schottky 1n5819 PACKAGE
Abstract: No abstract text available
Text: 1N5817 - 1N5819 1.0 Amp. Schottky Barrier Rectifier Current 1.0 A Voltage 20 V to 40 V DO-204AL DO-41 FEATURES Low power losses, high efficiency High surge current capability High frequency operation Guarding for overvoltage protection Low forward voltage drop
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1N5817
1N5819
DO-204AL
DO-41)
AEC-Q101
2011/65/EU
2002/96/EC
MIL-STD-750
DIODE Schottky 1n5819 PACKAGE
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1N5810 diode
Abstract: No abstract text available
Text: 1N5817 - 1N5819 1.0 Amp. Schottky Barrier Rectifier Current 1.0 A Voltage 20 V to 40 V DO-204AL DO-41 FEATURES Low power losses, high efficiency High surge current capability High frequency operation Guarding for overvoltage protection Low forward voltage drop
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1N5817
1N5819
DO-204AL
DO-41)
AEC-Q101
2011/65/EU
2002/96/EC
MIL-STD-750
1N5810 diode
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MBR130P
Abstract: MBR120P
Text: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 USA 1N5817 MBR115P 1N5818 MBR120P 1N5819 MBR130P MBR140P AXIAL LEAD RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-toconsr"jction with oxide passivation and metal overlap contact.
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1N5817
MBR115P
1N5818
MBR120P
1N5819
MBR130P
MBR140P
1N5817/MBR11EP/MBR120P
1N5818/MBR130P
1N5819/MBR140F
MBR130P
MBR120P
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1N5810 diode
Abstract: No abstract text available
Text: 1N5817 - 1N5819 1.0 Amp. Schottky Barrier Rectifier Current 1.0 A Voltage 20 V to 40 V DO-204AL / DO-41 FEATURES Low power losses, high efficiency High surge current capability High frequency operation Guarding for overvoltage protection Low forward voltage drop
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1N5817
1N5819
DO-204AL
DO-41
2002/95/EC
2002/96/EC
DO-41.
MIL-STD-750
J-STD-002
1N5810 diode
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Untitled
Abstract: No abstract text available
Text: 1N5817, 1N5818, 1N5819 www.vishay.com Vishay General Semiconductor Schottky Barrier Plastic Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation
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1N5817,
1N5818,
1N5819
22-B106
DO-204AL
DO-41)
2002/95/EC.
2002/95/EC
2011/65/EU.
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VS-1N5819TR-M3
Abstract: VS-1N5819-M3 1n5819 vishay make
Text: VS-1N5819, VS-1N5819-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength
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VS-1N5819,
VS-1N5819-M3
DO-204AL
DO-41)
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
VS-1N5819TR-M3
VS-1N5819-M3
1n5819 vishay make
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Untitled
Abstract: No abstract text available
Text: VS-1N5819, VS-1N5819-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength
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VS-1N5819,
VS-1N5819-M3
DO-204AL
2002/95/EC
DO-41)
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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VS-1N5819TR-M3
Abstract: VS-1N5819-M3
Text: VS-1N5819, VS-1N5819-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength
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VS-1N5819,
VS-1N5819-M3
DO-204AL
DO-41)
2002/95/EC
11-Mar-11
VS-1N5819TR-M3
VS-1N5819-M3
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1n5819
Abstract: No abstract text available
Text: VS-1N5819, VS-1N5819-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength
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VS-1N5819,
VS-1N5819-M3
DO-204AL
2002/95/EC
DO-41)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
1n5819
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1.1N5819
Abstract: 1n5819 melf 1N5819UR-1 d 2038 datasheets diode 1n5819 1N5819-1 SS5819UR-1 DO-213AB SS5819-1 PIV RATING 14 V DIODE
Text: SS5819-1 SS5819UR-1 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 2038, REV. - HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE. All ratings are at TA = 25oC unless otherwise specified.
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SS5819-1
SS5819UR-1
1.1N5819
1n5819 melf
1N5819UR-1
d 2038
datasheets diode 1n5819
1N5819-1
SS5819UR-1
DO-213AB
SS5819-1
PIV RATING 14 V DIODE
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5819-1
Abstract: SS5819UR-1 1N5819UR-1 1N5819-1 DO-213AB SS5819-1
Text: SS5819-1 SS5819UR-1 SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 2038, REV. B HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE. All ratings are at TA = 25oC unless otherwise specified.
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SS5819-1
SS5819UR-1
5819-1
SS5819UR-1
1N5819UR-1
1N5819-1
DO-213AB
SS5819-1
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melf diode D-5A
Abstract: melf diode marking MELF pad layout marking diode D2B gold melf QR217 1N4460US 1N5806US 1N5819 LE17
Text: DIODE LEADLESS CHIP CARRIER DLCC2 • Light Weight Hermetic Ceramic Surface Mount Package is designed as a drop In replacement for “MELF-5.1 D-5A ” / “A-MELF” packages† • Designed For High Reliability Military, Aerospace and Space Applications
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63Sn/37Pb
100mg
1N5806US
193mg
1N4460US
1N5819D2A-JQRS
melf diode D-5A
melf diode marking
MELF pad layout
marking diode D2B
gold melf
QR217
1N4460US
1N5806US
1N5819
LE17
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Untitled
Abstract: No abstract text available
Text: AP1603 STEP-UP DC/DC CONVERTER General Description Features • • • • • • • A Guaranteed Start-Up from less than 0.9 V High Efficiency Low Quiescent Current Less Number of External Components needed Low Ripple and Low Noise Space Saving Lead-Free Packages: SOT26
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AP1603
AP1603
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