DC TO 3 GHZ LNA APPLICATION CIRCUITS Search Results

dc to 3 ghz lna application circuits

Abstract: MGA-645T6 E4440A dc to 3 ghz lna amplifier application circuits FR4 Prepreg for RF 06 layer PCB
Contextual Info: Low Noise High Linearity Amplifier with Integrated Bypass Switch for 2.3 to 2.7 GHz Application Using MGA-645T6 Application Note 5312 Introduction This application note describes the design of application circuits for the LNA from 2.3 to 2.4 GHz for WiMax,

mcp01

Abstract: MABT01 09326 dc to 3 ghz lna application circuits RF Switch qfn RF front end
Contextual Info: MCP01 2.4 to 2.5 GHz RF Front End IC - Description The MCP01 contains a power amplifier PA , a low noise amplifier (LNA), and a SPDT switch. It is a 16-pins IC with 3x3mm2-QFN package and includes all the RF circuits that are needed between transceiver and antenna. Besides, the RF input and output impedance are 50Ω matched. Lots of

HAT1058C

Abstract: HAT2106G HAT1068C HAT1062G Hitachi MOSFET HAT3016G H5P0201MF BB304M FU 3024 wba sot23
Contextual Info: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products September, 2002 Product Marketing Dept. Multi Purpose Semiconductor Business Unit Semiconductor & Integrated Circuits, Hitachi, Ltd. HITACHI SMALL SIGNAL TRANSISTOR Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright,

SA2420

Abstract: SA2421 SA2421DH TSSOP24 LNA Mixer 2.4 GHz 2.45Ghz oscillator circuit
Contextual Info: INTEGRATED CIRCUITS SA2421 Low voltage RF transceiver — 2.45GHz Objective specification Philips Semiconductors 1998 Aug 24 Philips Semiconductors Objective specification Low voltage RF transceiver — 2.45 GHz DESCRIPTION SA2421 PIN CONFIGURATION The SA2421 transceiver is a combined low-noise amplifier, receive

rf transceiver 2.4 ghz

Abstract: SA2420 SA2420DH TSSOP24 LNA Mixer VCO 2.4 GHz 2.45Ghz 10dbm oscillator 2sa2420 2.45Ghz oscillator circuit
Contextual Info: INTEGRATED CIRCUITS SA2420 Low voltage RF transceiver — 2.45GHz Product specification Philips Semiconductors 1997 May 23 Philips Semiconductors Product specification Low voltage RF transceiver — 2.45 GHz DESCRIPTION SA2420 PIN CONFIGURATION The SA2420 transceiver is a combined low-noise amplifier, receive

rf transceiver 2.4 ghz

Abstract: 2.45GHZ balun "RF Transceiver" 2.2 ghz bandpass filter chip 5Ghz lna transistor datasheet TSSOP24 SA2420 SA2420DH 2.45Ghz oscillator circuit
Contextual Info: INTEGRATED CIRCUITS SA2420 Low voltage RF transceiver — 2.45GHz Product specification Philips Semiconductors 1997 May 23 Philips Semiconductors Product specification Low voltage RF transceiver — 2.45 GHz DESCRIPTION SA2420 PIN CONFIGURATION The SA2420 transceiver is a combined low-noise amplifier, receive

SA2420

Abstract: SA2421 SA2421DH TSSOP24 Transceiver 20 GHz block Diagram
Contextual Info: INTEGRATED CIRCUITS SA2421 2.45 GHz low voltage RF transceiver Product specification Supersedes data of 2000 Feb 11 Philips Semiconductors 2000 Mar 13 Philips Semiconductors Product specification 2.45 GHz low voltage RF transceiver SA2421 DESCRIPTION PIN CONFIGURATION

Contextual Info: INTEGRATED CIRCUITS SA2421 2.45 GHz low voltage RF transceiver Preliminary specification Philips Semiconductors 2000 Feb 11 Philips Semiconductors Preliminary specification 2.45 GHz low voltage RF transceiver SA2421 DESCRIPTION PIN CONFIGURATION The SA2421 transceiver is a combined low–noise amplifier, receive

350-400MHZ

Abstract: SA2420 SA2420DH TSSOP24 2SA2420 2.45Ghz 10dbm oscillator 2.45Ghz oscillator circuit
Contextual Info: INTEGRATED CIRCUITS SA2420 Low voltage RF transceiver — 2.45GHz Product specification Philips Semiconductors 1997 May 23 Philips Semiconductors Product specification Low voltage RF transceiver — 2.45 GHz DESCRIPTION SA2420 PIN CONFIGURATION The SA2420 transceiver is a combined low-noise amplifier, receive

Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN

Abstract: 180NM IBM
Contextual Info: IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 46, NO. 11, NOVEMBER 2011 2613 Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN Anuj Madan, Member, IEEE, Michael J. McPartlin, Member, IEEE, Zhan-Feng Zhou, Chun-Wen Paul Huang, Member, IEEE, Christophe Masse, and John D. Cressler, Fellow, IEEE

uln 2008

Abstract: 825000 BFP740F Digital Oscilloscope Preamplifier michael hiebel fundamentals of vector analysis uln 2008 datasheet LQP10A MTA-100 spice ULN ultra Low Noise ULN types
Contextual Info: Application Note, Rev. 1.2, November 2008 Application Note No. 168 BFP740F SiGe:C Ultra Low Noise RF Transistor in 5 – 6 GHz LNA Application with 16 dB Gain, 1.3 dB Noise Figure & 1 microsecond Turn-On / Turn-Off Time For 802.11a & 802.11n “MIMO” Wireless LAN Applications

free transistor

Abstract: BFR740L3RH uln 2008 uln 2008 datasheet Digital Oscilloscope Preamplifier ULN 2009 ultra Low Noise ULN types 825000 LQP10A MTA-100
Contextual Info: Application Note, Rev. 1.1, May 2009 Application Note No. 170 BFR740L3RH SiGe:C Ultra Low Noise RF Transistor in 5 – 6 GHz LNA Application with 14 dB Gain, 1.3 dB Noise Figure & < 100 nanosecond Turn-On / Turn-Off Time TSLP-3-9 Pb-Free / Halogen Free Transistor Package

uln 2008

Abstract: BFP740 uln 2008 datasheet 825000 michael hiebel fundamentals of vector analysis Digital Oscilloscope Preamp Digital Oscilloscope Preamplifier BFP740 equivalent BFP740F LQP10A
Contextual Info: Application Note, Rev. 1.0, November 2008 Application Note No. 169 BFP740 SiGe:C Ultra Low Noise RF Transistor in 5 – 6 GHz LNA Application with 15 dB Gain, 1.3 dB Noise Figure & ~ 100 nanosecond Turn-On / Turn-Off Time For 802.11a & 802.11n “MIMO” Wireless LAN Applications

AT 2313

Abstract: BFP640 BFP620 applications note dc to 3 ghz lna application circuits BFP620 MTA100 BFP640 noise figure amplifier TRANSISTOR 12 GHZ dc to 3 ghz lna amplifier application circuits lna schematic diagram
Contextual Info: A pp li c at io n N o t e, R e v . 1. 2 , N ov e m be r 2 00 7 A p p li c a t i o n N o t e N o . 1 3 0 T h e S i G e B F P 6 4 0 a s a 2 .4 G H z L o w N o i s e Amplifier LNA R F & P r o t e c ti o n D e v i c e s Edition 2007-11-07 Published by Infineon Technologies AG

dc to 3 ghz lna application circuits

Abstract: bipolar transistor ghz s-parameter 300 ohm 2 ghz Antenna T7024 atmel 811 schematics for a PA amplifier QFN20 short distance rf tx ic J103 transistor top view ICT7024
Contextual Info: Bluetooth Front-end IC T7024 Design Guide General Information The T7024 is a single supply front-end IC especially designed for applications in the 2.4 GHz to 2.5 GHz frequency band. The front end consists of a Power Amplifier PA , a Low-Noise Amplifier (LNA) and a switch driver for a PIN diode antenna switch.

k 513

Abstract: MOBILE PHONE AMPLIFIER michael hiebel fundamentals of vector analysis bfp640f BFP620 applications note gps trimble transistor bf 179 Miteq MTA-100 AN179
Contextual Info: BF P640 F AN179 High Gain , Hi gh IP3 GPS L NA using BF P640 F Si Ge: C Transisto r Applic atio n Note Revision: Rev 1.2, 2010.02.16 RF and Protecti on Devi c es Edition 2010.02.16 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG

Contextual Info: Bluetooth Front End T7024 Design Guide General Information The T7024 is a single supply front end designed especially for applications in the 2.4 GHz to 2.5 GHz frequency band. The front end consists of a Power Amplifier PA , a Low-Noise Amplifier (LNA) and a switch driver for a PIN diode antenna switch.

CGY2106TS

Abstract: Philips npo 0805 SSOP16 CGY21 CGY2106
Contextual Info: INTEGRATED CIRCUITS DATA SHEET CGY2106TS High dynamic range dual LNA MMIC Preliminary specification File under Integrated Circuits, IC17 2000 Aug 28 Philips Semiconductors Preliminary specification High dynamic range dual LNA MMIC CGY2106TS FEATURES GENERAL DESCRIPTION

BFP620 applications note

Abstract: AN057 BFP620 TRANSISTOR 37518 AN060 BCR400R BCR400W BFP540 LQG10A MS11
Contextual Info: A pp l ic a t io n N o t e, R e v . 3. 0 , J a n. 2 00 7 A p p li c a t i o n N o t e N o . 0 6 0 A H i g h T h i r d- O r d e r I nt e r c e pt L o w N o i s e A m p l i f i e r f o r 1 9 0 0 M H z A p pl i c a t i o n U s i n g t h e S i l i c o n Germanium BFP620 Transistor

LNA Mixer VCO 2.4 GHz

Abstract: 800-1200MHZ SA620 SA620DK SA7025 philips radio 900MHz
Contextual Info: INTEGRATED CIRCUITS SA620 Low voltage LNA, mixer and VCO – 1GHz Product data Supersedes data of 1993 Dec 15 Philips Semiconductors 2004 Dec 14 Philips Semiconductors Product data 1GHz low voltage LNA, mixer and VCO DESCRIPTION SA620 PIN CONFIGURATION The SA620 is a combined RF amplifier, VCO with tracking bandpass

BFP620 applications note

Abstract: BFP540 AN057 BCR400R BCR400W BFP620 LQG10A MS10 MS11 MS12
Contextual Info: Applications Note No. 060 Silicon Discretes A High Third-Order Intercept Low Noise Amplifier for 1900 MHz Applications Using the Silicon-Germanium BFP620 Transistor • Gain = 14.7 dB • Very Low Noise Figure = 1.05 dB • High Input 3rd-Order Intercept Point = +10 dBm

BFP620 applications note

Abstract: 28428 bfp640 BFP640 noise figure transistor l2 ansoft 3RD Rail Engineering RF LNA 10 GHz
Contextual Info: LWR # 00522 LNA P Silicon Discretes - BFP640 Preliminary Eval / 2.4 GHz LNA September 7, 2001 The SiGe BFP640 as a 2.4 GHz Low Noise Amplifier. • Overview: The new BFP640 SiGe Transistor is shown in a 2400 – 2483.5 MHz Low Noise Amplifier Application. The

michael hiebel fundamentals of vector analysis

Abstract: NRP-Z21 AN220 BFP740FESD MTA-100 rf detector diode BFP740F C166 TSLP-2-17 FSEM30
Contextual Info: BF P7 4 0 F ES D BF P7 4 0 F ES D E SD - Ha r d e n e d Si Ge : C Ul tr a L o w No i s e R F Tra n s i s to r wi t h 2 k V ES D Ra ti n g i n 5 – 6 G Hz L NA Ap p l i c a ti o n . 1 7 d B G a i n , 1 .4 d B No i s e Fi g u r e & < 1 0 0 n s T u rn - O n / T u rn - O ff

FSEM30

Abstract: BFP740 AN219 michael hiebel fundamentals of vector analysis NRP-Z21 sot344 BFP740ESD BFP740FESD C166 MTA-100
Contextual Info: BF P7 4 0 E SD BF P7 4 0 E SD E S D- H a rd e n e d S i Ge :C Ul tr a L o w No i s e R F Tra n s i s to r wi t h 2 k V ES D Ra ti n g i n 5 – 6 G Hz L NA Ap p l i c a ti o n . 1 5 d B G a i n , 1 .3 d B No i s e Fi g u r e & < 1 0 0 n s T u rn - O n / T u rn - O ff