DC-2400 MHZ 3.5V SIGE AMPLIFIER Search Results

Contextual Info: Preliminary Product Description SGA-5489 Stanford Microdevices’ SGA-5489 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

DC-2400 MHz 3.5V SiGe Amplifier

Contextual Info: Preliminary Product Description SGA-5486 Stanford Microdevices’ SGA-5486 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

SGA-5486

Abstract: SGA-5486-TR1 SGA-5486-TR2
Contextual Info: Preliminary Product Description SGA-5486 Stanford Microdevices’ SGA-5486 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

SGA-5286

Abstract: SGA-5286-TR2
Contextual Info: Preliminary Product Description SGA-5286 Stanford Microdevices’ SGA-5286 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

SGA5289

Abstract: transistor 20 dB 2400 mhz
Contextual Info: Preliminary Product Description SGA-5289 Stanford Microdevices’ SGA-5289 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

Contextual Info: Preliminary Product Description SGA-5286 Stanford Microdevices’ SGA-5286 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

mmic a35

Abstract: SGA-3586 Drivers for CATV Amplifiers
Contextual Info: Preliminary Product Description SGA-3586 Stanford Microdevices’ SGA-3586 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

Contextual Info: Preliminary Product Description SGA-5389 Stanford Microdevices’ SGA-5389 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.6V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

transistor C 5386

Abstract: C 5386 DC-*MHz Amplifier
Contextual Info: Preliminary Product Description SGA-5386 Stanford Microdevices’ SGA-5386 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.6V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

transistor C 5386

Abstract: C 5386 SGA-5386 SGA-5386-TR1 SGA-5386-TR2 DC-3200 c 5386 with Pin
Contextual Info: Preliminary Product Description SGA-5386 Stanford Microdevices’ SGA-5386 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.6V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

SGA-5389 Z

Abstract: SGA-5389
Contextual Info: Preliminary Product Description SGA-5389 Stanford Microdevices’ SGA-5389 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.6V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

TRANSISTOR MARKING A53

Abstract: marking A53 mmic SGA-5325 EDS-100967 amplifier gain 36 dB
Contextual Info: Preliminary Product Description SGA-5325 Stanford Microdevices’ SGA-5325 is a high performance cascadeable 50-ohm amplifier housed in an low-cost surface-mountable SOT23-5 plastic package. Designed for operation at voltages as low as 3.5V, this RFIC uses the

marking A45

Abstract: germanium transistor ac 128 SGA-4563 marking A45 RF TRANSISTOR 726
Contextual Info: Preliminary Preliminary Product Description SGA-4563 Stanford Microdevices’ SGA-4563 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.4V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

Contextual Info: MAX19757 Dual, SiGe, High-Linearity, 1700MHz to 2700MHz Downconversion Mixer with Advanced Shutdown Features General Description The MAX19757 dual-channel downconverter is designed to provide 8.8dB gain, +25.3dBm input IP3 and 10.4dB NF for a multitude of 1700MHz to 2700MHz basestation

Contextual Info: Product Description SGA-5489 Stanford Microdevices’ SGA-5489 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with Ft up to 65 GHz.

Contextual Info: Product Description SGA-5486 Stanford Microdevices’ SGA-5486 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with Ft up to 65 GHz.

RF2173

Abstract: RF2174 RF3108 dcs response time
Contextual Info: RF3108 TRIPLE-BAND GSM/DCS/PCS POWER AMP MODULE Typical Applications • 3V Dual-Band/Triple-Band GSM Handsets • Portable Battery-Powered Equipment • Commercial and Consumer Systems • GPRS Class 12 Compatible Product Description The RF3108 is a high-power, high-efficiency power amplifier module offering high performance in GSM or GPRS

RF3108

Contextual Info: RF3108 TRIPLE-BAND GSM/DCS/PCS POWER AMP MODULE Pb-Free Product Typical Applications • 3V Dual-Band/Triple-Band GSM Handsets • Portable Battery-Powered Equipment • Commercial and Consumer Systems • GPRS Class 12 Compatible Product Description The RF3108 is a high-power, high-efficiency power amplifier module offering high performance in GSM or GPRS

HMC477MP86

Contextual Info: v00.0603 MICROWAVE CORPORATION HMC477MP86 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.0 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC477MP86 is an ideal RF/IF gain block & LO or PA driver for: P1dB Output Power: +15 dBm • Cellular / PCS / 3G

RF2173

Abstract: RF2174 RF3108 dcs response time
Contextual Info: RF3108 TRIPLE-BAND GSM/DCS/PCS POWER AMP MODULE Typical Applications • 3V Dual-Band/Triple-Band GSM Handsets • Portable Battery-Powered Equipment • Commercial and Consumer Systems • GPRS Class 12 Compatible Product Description The RF3108 is a high-power, high-efficiency power amplifier module offering high performance in GSM or GPRS

Contextual Info: Product Description SGA-5289 Stanford Microdevices’ SGA-5289 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with Ft up to 65 GHz.

Contextual Info: Mît Product Description SGA-5386 Stanford Microdevices’ SGA-5386 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.6V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

Contextual Info: Product Description SGA-5389 Stanford Microdevices’ SGA-5389 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.6V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with Ft up to 65 GHz.

Contextual Info: RF5110 3V GSM POWER AMPLIFIER Typical Applications • 3V GSM Cellular Handsets • Commercial and Consumer Systems • 3V Dual-Band/Triple-Band Handsets • Portable Battery-Powered Equipment • GPRS Compatible Product Description -A- • GaAs MESFET Si Bi-CMOS