DD 127 D TRANSISTOR Search Results

Contextual Info: ERICSSON ^ PTE 10114* 12 Watts, 1.5 GHz LDMOS Field Effect Transistor Description The 10114 is a com mon source n-channel enhancem ent-m ode lateral MOSFET intended for large signal am plifier applications to 1.5 GHz. It is ra ted a t 12 w a tts m inim um o u tp u t pow er. N itrid e surface

TE1509

Abstract: TE1055 30D8 DD 127 D TRANSISTOR te1157.1 TE1064 TE1068 TE1090 TE1105 TYPE TE
Contextual Info: Type TE Vishay Sprague Aluminum Capacitors LITTL-LYTIC Electrolytics FEATURES • Proven dependable performance in the industrial and electronic equipment with either transistor or modified electron-tube circuits • All terminal connections welded, eliminating possibility of

dd 127

Abstract: GS 069 CHM13N07PAPT motor mosfet 55a6m
Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 70 Volts CHM13N07PAPT CURRENT 11 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. TO-252A FEATURE * Small package. TO-252A

CHM13N07PAGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHM13N07PAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 70 Volts CURRENT 11 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE

DD 127 D TRANSISTOR

Abstract: STP4NA100
Contextual Info: STP4NA100 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP4NA100 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 1000 V <3. 5 Ω 4.2 A TYPICAL RDS(on) = 2.9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100 oC

DD 127 D TRANSISTOR

Abstract: STP4NA100
Contextual Info: STP4NA100 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP4NA100 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 1000 V <3. 5 Ω 4.2 A TYPICAL RDS(on) = 2.9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

DD 127 D TRANSISTOR

Abstract: STP4NA100
Contextual Info: STP4NA100 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP4NA100 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 1000 V <3. 5 Ω 4.2 A TYPICAL RDS(on) = 2.9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100 oC

Contextual Info: SIEMENS BSP 324 SIPM OS Small-Signal Transistor • N channel • Enhancement mode • ^GS th = 1-5 .2.5 v Type VDS BSP 324 400 V Type BSP 324 Ordering Code Q67000-S215 0.1 7 A ^DS(on) Package Marking 25 a SOT-223 BSP 324 Tape and Reel Information E6327

MOTOROLA POWER TRANSISTOR lc 945

Abstract: zener ap 474 940 629 MOTOROLA 113
Contextual Info: MOTOROLA O rder this docum ent by M RF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N-Channel Enhancement Mode D esigned fo r w id e b a n d la rg e -s ig n a l am p lifie r and o scilla to r ap plicatio ns to 500 MHz.

H5NA100FI

Abstract: h5na100 TRANSISTORS 132 GD W5NA100 ST C 236 DIODE H5NA100F STH5NA100FI STW5NA100 O-247 h5NA
Contextual Info: STW5NA100 STH5NA100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS R DS on ID ST W5NA100 ST H5NA100FI 1000 V 1000 V < 3.5 Ω < 3.5 Ω 4.6 A 2.9 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 2.9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING

STH5NA100FI

Abstract: STW5NA100 TRANSISTORS 132 GD
Contextual Info: STW5NA100 STH5NA100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS R DS on ID STW5NA100 STH5NA100FI 1000 V 1000 V < 3.5 Ω < 3.5 Ω 4.6 A 2.9 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 2.9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING

DD 127 D TRANSISTOR

Contextual Info: STU/D9916L SamHop Microelectronics Corp. Preliminary Mar.25 2004 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON Super high dense cell design for low RDS(ON). ( m Ω) Max Rugged and reliable. 30@ VGS = 10V 30V TO-252 and TO-251 Package.

MARKING code WMM RF transistor

Contextual Info: SIEMENS ICs for Consumer Electronics DDC-PLUS-Deflection Controller SDA 9361 D a ta s h e e t 1998-02-01 Edition 1998-02-01 This edition was realized using the softw are system FrameMaker Published by Siem ens AG, Bereich Halbleiter, M arketing-Kom m unikation,

BUZ80AFI

Abstract: BUZ80AF BUZ80A k2800 Y125 dg45b
Contextual Info: 7 ^ 2 ^ 5 3 7 O O M SbBT G 7b • S 6TH BUZ80A BUZ80AFI SGS-THOMSON :^OT q MS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ80A BUZ80AFI ■ . . ■ . ■ . V dss R dS(OII) Id 800 V 800 V < 3 Q < 3 Ü 3.8 A 2.4 A TYPICAL Ros(on) = 2.5 Q AVALANCHE RUGGED TECHNOLOGY

STH5NA100FI

Abstract: STW5NA100
Contextual Info: STW5NA100 STH5NA100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS R DS on ID STW5NA100 STH5NA100FI 1000 V 1000 V < 3.5 Ω < 3.5 Ω 4.6 A 2.9 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 2.9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING

SMD Transistor NI

Abstract: smd marking AB 6 PIN siemens off saw filter HSYNC, VSYNC, DE, input, output digital tv
Contextual Info: SIEMENS ICs for Consumer Electronics DDC-PLUS-Deflection Controller SDA 9361 D atasheet 1998-02-01 Edition 1998-02-01 This edition was realized using the software system FrameMaker Published by Siemens AG, Bereich Halbieiter, Marketlng-Kommunikation, BalanstraBe 73,

2SK790

Abstract: HSO16 2SK79 1SV35
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 T O S H IB A TT dF § T D T 725G O D l bTSS T J T O S H IB A D I S C R E T E /OPTO J T0SHIBA FIELD effect TRANSISTOR 2 S IC 7 9 0 99D 1 6 7 5 5 SEMICONDUCTOR SILICON N CHANNEL MOS TYPE C7T-MOSI T-3'?-13 TECHNICAL DATA •INDUSTRIAL APPLICATIONS

SIEMENS 3 TB 40 17 - 0A

Abstract: SIEMENS 3 TB 40 17 - 0B SIEMENS 3 TB 40 12 - 0A
Contextual Info: ICs for Consumer Electronics DDC-PLUS-Deflection Controller SDA 9362 D a ta s h e e t 1998-02-01 Edition 1998-02-01 This edition was realized using the software system FrameMaker Published by Siemens AG, Bereich Halbleiter, Marketing-Kommunikation, Balanstraße 73,

SMD transistor MARKING code RIP 31

Contextual Info: SIEMENS ICs for Consumer Electronics DDC-PLUS-Deflection Controller SDA 9362 D a ta s h e e t 1998-02-01 Edition 1998-02-01 This edition was realized using the softw are system FrameMaker Published by Siem ens AG, Bereich H albleiter, M arketing-Kom m unikation,

Contextual Info: Zjï SGS-THOMSON ¡[LieraMe STW5NA100 STH5NA100FI N - CHANNEL ENHANCEMENT MODE _POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V dss R d S oii Id S T W 5 N A 1 00 S T H 5N A 1 00 F I 1 0 00 V 1 0 00 V < 3 .5 Q. < 3 .5 CÌ 4 .6 A 2 .9 A TYPICAL R D S (on) = 2.9 Î2

Contextual Info: S G S -T H O M S O N RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ S T P 4 N A 100 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYP E V dss S T P 4 N A 1 00 1000 V R dS(oii) <3. 5 Q. Id 4.2 A . • TYPICAL RDS(on) =2.9 ± 30V GATE TO SOURCE VOLTAGE RATING

600N25N

Abstract: DD 127 D TRANSISTOR ds 290 14H IEC61249-2-21 JESD22 PG-TO220-3 IPI600N25N3 G
Contextual Info: IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 250 V R DS(on),max 60 mΩ ID 25 A • Very low on-resistance R DS(on) • 175 °C operating temperature

Contextual Info: IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) • Very low on-resistance R DS(on) VDS 250 V RDS(on),max 60 mW ID 25 A • 175 °C operating temperature

600N25N

Contextual Info: IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 250 V RDS(on),max 60 mW ID 25 A • Very low on-resistance R DS(on) • 175 °C operating temperature