DD003 Search Results

.47j 63v

Contextual Info: THOMSON COMPONENTS THOMSON PASSIVE MbE D • TD263DS DD0037b T ■ THP TYPE AC / AN MULTILAYER CERAMIC CHIP CAPACITORS /?-PF~û5-& 7 PHYSICAL C H A R A C TER ISTIC S TERM INATIO N Standard: Silver palladium metallization. Can meet reflow solder specifications for 5 sec. @ 260°C.

66022

Contextual Info: fllCROPAC INDUSTRIES INC DE jbllEtiMD DD003Ô4 A |~D 66022 and 66039 MICROCOUPLER FOR HYBRID CIRCUITS OPTOELECTRONIC PRODUCTS ; ^DIVISION JUNE, 1984 FEATURES • Variety of CTR, and Switching speeds available, • Available in MIL STD 883B Screened versions, t

ttbb

Abstract: CBR2-H020R H010 h020
Contextual Info: CENTRAL SEMICONDUCTOR iE DE I ^ 3 -OS~* DD00331 DESCRIPTION The CENTRAL SEMICONDUCTOR CBR2-H series types are silicon full wave bridge rectifiers mounted in a durable epoxy molded case. Also available in reverse polarity + and - terminals interchanged . Add "R" suffix to part number, jix: CBR2-H020R

2451B

Abstract: DTL-1300-S safenet 650 86J Amplifier safenet 1380nm
Contextual Info: OPTICAL OCP conn P R O D U C T S INC S7E D H4Slb41 DD003bl OS? IPCO Preliminary DTL-1300-F/S Data Link Modules for FDDI Features □ Full FDDI Compliance □ High Temperature and SAFENET Applications □ Minimum o f 18 dB Link Budget □ Wide Receiver Dynamic Range,

NSL-701

Abstract: NSL-803
Contextual Info: Ö2SS271 G0Q0304 □ S3E 0 S I L O N E X INC SILONEX c SILICON PHOTOVOLTAIC CELLS FEATURES • • • • • • • Fast re spo nse High reliability, long life Protective, humidity resistant coating Operating Temperature Range: -65°C to 125°C Ideal for moderate reverse bias voltage operation

Matsuo Film CAPACITOR

Abstract: 431A 553m 0068PF RCR-2350 c4430
Contextual Info: m MATSUO METALLIZED POLY ETHYLENE TEREPHTHALATE FILM CAPACITORS A CAUTIONS •T h is capacitor is suitable for D C circuit. In case of A C circuit use, please refer to our sales departm ent. • T h e sum of peak value of A C and D C voltage should not exceed the

8049 microcontroller APPLICATION

Contextual Info: INTERNATIONAL C M O S K 37E D • MÔ4070? D000307 b INTERNATIONAL CMOS Preliminary Data TECHNOLOGY, INC. _ _ ■ " r - q f c - i 's . 'i r ? l 93C56A/C66A 2,048/4,096-Bit Serial 5V only CMOS Electrically Erasable Programmable Read Only Memory (EEPROM)

Contextual Info: FCI Semiconductor Preliminary Data Sheet S R 1535.1545 Series 15 AMP HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIERS Description Mechanical Dimensions Features O Meets or Exceeds UL Flammability Specification 94V-0 O Center Tap Configuration O 150 Deg. C. Operating Junction Temperature

DD056

Abstract: DD058 DD2020 DD4526 DD000 DD001 DD006 DD1000 DD1001 DD1003
Contextual Info: Rectifier diodes Rectifier diodes — general purpose types rsm VR max. max. V rw M max. 10 ms V V V V Type rr M V I F(AV) @ Photographs actual size I fsm R max. @ VR max. & T = 25°C max. ma V "^"tag I fr m A °c max. max. (1 Oms) @Tj = 25°C A A 80(1 70(1

Contextual Info: VITELIC CORP Tfl VITELIC Ì>E| TS0S310 DDDD303 T 23-12 V61C35 FAMILY HIGH PERFORMANCE LOW POWER 2 Kx 8 DUAL PORT MEMORY Description Features • 2K x 8 bit CM OS Static RAM with 3-state outputs ■ High Speed Multiplexed Dual Port operation • 55ns, 70ns, 90ns, 120ns access time

Contextual Info: METALLIZED POLYESTER MINIATURE • M M 3 5 R - Radial Box ■ M M 3 5 D - Radial Epoxy Dipped ■ M M 3 5 0 - Axial Oval ■ M M 3 5 - Axial Round FEATURES: Extended metallized film, non-inductive Miniature Size Self healing properties Wide temperature range

Contextual Info: mm / • M P 8 5 R - Radial Box ■ M P 8 5 D - Radial Epoxy Dipped ■ M P 8 5 0 - Axial Oval ■ M P 8 5 - Axial Round ■ M P 8 5 S - Axial Round Capsule Consult Factory fo r Dimensions / /e B d !Æ to \li METALLIZED POLYPROPYLENE METALLIZED POLYPROPYLENE

Contextual Info: METALLIZED POLYPROPYLENE mm / / /e B d !Æ to \li • M P 8 5 R - Radial Box ■ M P 8 5 D - Radial Epoxy Dipped ■ M P 8 5 0 - Axial Oval METALLIZED POLYPROPYLENE ■ M P 8 5 - Axial Round ■ M P 8 5 S - Axial Round Capsule Consult Factory for Dimensions

Contextual Info: METALLIZED POLYESTER MINIATURE • M M 3 5 R - Radial Box ■ M M 3 5 D - Radial Epoxy Dipped ■ M M 3 5 0 - Axial Oval ■ M M 3 5 - Axial Round FEATURES: Extended metallized film, non-inductive Miniature Size Self healing properties Wide temperature range

W83757F

Abstract: W83777F w83777 W83787F w83787
Contextual Info: Preliminary W83777F/W83787F /fffF F K V Winbond i i POWER I/O PElectronics l a r t r n n i r e Corp. r n r n GENERAL DESCRIPTION The W83777F/W83787F integrates a disk drive adapter, serial port UART , parallel port, IDE bus interface, and game port decoder onto a single I/O chip. The W83777F/W83787F is an enhanced

Contextual Info: M IR O N DM2202/2212EDRAM 1Mbx 4 EnhancedDynamic RAM Product Specification Features • 2Kbit SRAM Cache Memory for 15ns Random Reads Within a Page ■ Fast 4Mbit DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes

MMIC code D

Abstract: 10 GHz pin diode 60 GHz PIN diode gaas E5 MMIC iso/8879-1986/gp131 diode
Contextual Info: MICRONETICS INC blll7M5 Q Q O G 3 4 cl Q EHMRO 34E D 'T - S > 'U A - T ^ t- T J b Single Pole Five Throw LOW BAND 10 MHz to 1000 MHz GaAs MMIC HIGH BAND 1 GHz to 18.5 GHz (PIN Diode) a D E SeR IB -T I •GaAs, MMIC and PIN diode technology •High reliability

VID7340022

Abstract: 8H201
Contextual Info: 8H-LED L E D f Ì P — T s^i Rocker Switches with LED •Feature-8H-LED P' y*— 8H ^ -f/^ fF S P H L E D ^ l'Z>tzlsbs ÌÌÉ 5it 7 7> 7ÌZ j:t^^J^m > ;t, T l i ï È j t L T l ' S r ^ T , tk & lïM X . H # fS )K «fc‘A LED «

m63012

Abstract: CWS11 M10024 MATSUO 281 Matsuo Electric 2AF LO 250/6 0 R – V P H 05-Y
Contextual Info: m • SOLID-ELECTROLYTE TANTALUM CAPACITORS MATSUO A CAUTIONS type1 •T h is capacitor is polarized, do not apply reverse voltage. • The sum of peak value of AC and DC voltage should not exceed the rated voltage. •T h is catalog is designed for providing general information. Please

Contextual Info: METALLIZED POLYESTER AC RATED _ • M M 3 6 R - Radial Box ■ M M 3 6 D - Radial Epoxy Dipped ■ M M 3 6 0 - Axial Oval ■ M M 3 6 - Axial Round APPLICATIONS: FEATURES: Snubber circuits Networks / Filtering High voltage, current and pulse applications

Contextual Info: METALLIZED POLYPROPYLENE mm / / /e B d !Æ to \li • M P 8 5 R - Radial Box ■ M P 8 5 D - Radial Epoxy Dipped ■ M P 8 5 0 - Axial Oval METALLIZED POLYPROPYLENE ■ M P 8 5 - Axial Round ■ M P 8 5 S - Axial Round Capsule Consult Factory for Dimensions

Contextual Info: E2/E3F Device 8-, 34 Mbit/s Framer TXC-03701 v DATA SHEET W FEATURES DESCRIPTION Framer for CCITT Recommendations: - G.742 8448 kbit/s - G.745 (8448 kbit/s) - G.751 (34368 kbit/s) - G.753 (34368 kbit/s) = The E2/E3 Framer (E2/E3F) is a CMOS VLSI device that provides the functions needed to frame a wideband

KP H 120 pF axial

Contextual Info: METALLIZED POLYESTER AC RATED _ • M M 3 6 R - Radial Box ■ M M 3 6 D - Radial Epoxy Dipped ■ M M 3 6 0 - Axial Oval ■ M M 3 6 - Axial Round APPLICATIONS: FEATURES: Snubber circuits Networks / Filtering High voltage, current and pulse applications

Contextual Info: POLYPROPYLENE FILM-FOIL INTERNAL SERIES CONNECTION _ FEATURES: APPLICATIONS: Series wound with internal metallized polypropylene High voltage / High current Very low ESR High Insulation Resistance Capable of high discharge current Small dimensions