DD177 Search Results

dilmon 28

Abstract: transistor DA 218
Contextual Info: be!E D • 37bfi522 DD1770R RflO m P L S B PSLU4I G E C P L E S S E Y GEC PLESSEY SEMICONDS S E M I C O N D U C T O R S DS2349-2.2 ULA DA SERIES ANALOG/DIGITAL MIXED SIGNAL ARRAY FAMILY Supersedes June 1990 Edition The ULA DA Series is a family of 8 arrays developed to

TA8116F

Contextual Info: TOSHIBA-. ELECTRONIC DE D Ë ^ ci[ c17247 DD177Sa 3 | 02E 9097247 T O S H I B A . ELECTRONIC 17752 TA8116F TENTATIVE . FM FRONT END Unit in mm TA8116F, an IC designed for car-tuner, has the 16 functions of the mixer provided wi th remarkably 9 BBflQQ BflQ

MI407

Contextual Info: bSMSÔSS DD17741 b TE • ANTENNA SWITCH M I407 PIN DIODE RF POWER SWITCHING DESCRIPTION Dimension: mm OUTLINE DRAWING The MI407 PIN diode is employing a high reliability glass construction, designed for solid state antenna switches in commercial two-way radios.

Contextual Info: bEMTÖER DD177t 7 HYBRID ANTENNA SWITCH =5D*1 MD003 8 0 0 -9 4 0 M H z , 5W, ANTENNA SWITCH MINIATURE RF ANTENNA SWITCH MD003 is designed to cover 800 — 940MHz, 5W, antenna switch module. • Small, Easilly Mounted Package. • High Isolation: 35dB Typ.

MAC15 triac

Abstract: 30427 MAC15A T17A MAC15 MAC15-10 MAC15-4 MAC15-6 MAC15-8 MAC15A-4
Contextual Info: G E SOLI» STATE 3875081 □1 T T | B ñ 7 S 0 ñ l DD177fil 3 0 1E 1 7781 G E SO LI D STATE MAC15, MAC15A Series D File Number 1086 15-A Silicon Triacs Three-Lead Plastic Types for Power-Control and Power-Switching Applications Features: • 800V, 125 Deg. C Tj Operating

Contextual Info: HITACHI/ LOGIC /AR RAYS/MEM SIE II MM1baG3 DD17703 HN62444 Series- TO b • H IT S T—46—13—15 4M 256K x 16-bit and (512K x 8-bit) Mask ROM ■ DESCRIPTION The Hitachi HN62444is a 4-Megabit CMOS Mask Programmable Read Only Memory organized as 262,144 x 16-bit and 524,288 x 8bit.

MI308

Contextual Info: , bEli tîflEtl DD17735 ANTENNA SWITCH 3TT • Ml308 PIN DIODE RF POWER SWITCHING DESCRIPTION OUTLINE DRAWING The M I3 0 8 PIN diode is employing a high reliability glass Dim ension: mm construction, designed for solid state antenna switchs in commercial tw o-w ay radios.

Contextual Info: SAMSUNG ELECTRONICS INC b7E ]> • 7 ^ b m M 5 DD177Dh 117 SPIGK PRELIMINARY KM644002 CMOS SRAM 1,048,576 WORD x 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15,20, 25ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.)

Contextual Info: MSE D • ‘ÌO'ÌTSSD TOSHIBA TOSHIBA TRANSISTOR 2 DD17777 «T O S ii DISCRETE/OPTO 2N5550 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) FO R G E N E R A L P U R P O S E USE HIGH V O L T A G E AMPLIFIER APPLICATIONS. . High C ollector Breakdown Voltage •'

S6431m

Abstract: RCA-S6493M S6493M
Contextual Info: G E SOLI» STATE Dl 3875081 G E SOLID STATE S ilicon C ontrolled Rectifiers DE I 3fl750öl DD1774E M 01E 17742 D S6493M File Number Silicon Controlled Rectifier For High-Current Pulse Applications

KM6164002j

Abstract: KM6164002 ISE Electronics
Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7^4145 DD177BD ST7 PRELIMINARY KM6164002 spigk CMOS SRAM 262,144 WORD x 16 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 20, 25, 35ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.)

SRAM timing

Contextual Info: SAMSUNG E L E C TRONICS INC b7E J> • 7TbmN2 0Ü177M2 KM79C86 ISfi M S I I S K CMOS SRAM 3 2 K x9 Synchronous Burst Cache RAM with Self-Timed Write FEATURES GENERAL DESCRIPTION • Synchronous Operation The KM79C86 is a 294,912 bit S ynchronou s S tatic Ran­

Contextual Info: ¡¡ S ix 1 28K X 32 CMOS STATIC RAM MODULE \ y Integrated Device Technology, Inc. IDT7MP4095 FEATURES: DESCRIPTION: • High density 4 m egabit static RAM m odule The IDT7MP4095 is a 128K x 32 static RAM module constructed on an epoxy laminate FR-4 substrate using four

Contextual Info: 45E D • TCH72S0 00177b? T «TOSH TOSHIBA TRANSISTOR - 2N4403 SILICON PNP EPITAXIAL TY P E PCT PROCESS TOSHIBA (DISCRETE/OPTO) FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : I c E V = _ 1 0 0 n A ( M a x .) ,

Contextual Info: Thai H E W L E T T WLHMPA C K A R D D igital Radio Receiver Down Converter M odules for 21.2 to 23.6 GHz Technical Data DRR1-23XX Features Description • Low N oise PHEMT MMIC Front End Amplifier This digital radio receiver module provides the RF receive and down

Contextual Info: .Technical Data F ile N u m b e r CD54/74HC299 CD54/74HCT299 1485 HARRIS SEMICOND SECTOR 27E D M3G5271 0G1777G ? HAS ^ U High-Speed CMOS Logic t 20 — ô ë î— 2 19 - S 1 0Ê 2 — 3 16 - 0 S 7 i/ o 6 — 4 17 - Q 7 1/O 4 — 5 16 - I / O 7

Contextual Info: O K I Semiconductor MSM511001B 1,048,576-Word x 1-Bit DYNAMIC RAM : NIBBLE M ODE TYPE DESCRIPTION The MSM511001B is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511001B is OKI's CMOS silicon gate process technology. The

3 phase ac motor speed control

Abstract: receiver 4310 fea IH08 DIODE YW 431 scr transistor marking code E3t
Contextual Info: DS83CH20 DALLAS SEMICONDUCTOR DS83CH20 Unified I/O PRODUCT SPECIFICATION Revision 1.3 Copyright 1997 by Dallas Semiconductor Corporation. All Rights Reserved. For important information regarding patents and other intellectual property rights, please refer to

F2683

Contextual Info: That HEWLETT mi/LMPACKARD 2-16 GHz General Purpose Gallium Arsenide FET Technical Data A TF-26836 F e a tu r e s D escrip tio n • High Output Power: 18.0 dBm Typical Pj dB at 12 GHz The ATF-26836 is a high perfor­ mance gallium arsenide Schottkybarrier-gate field effect transistor

Contextual Info: / T u r m LTC140Q TECHNOLOGY C om plete SO-8,12-Bit 400ksps ADC w ith Shutdown F€OTUR€S DCSCMCTlOn • Complete 12-Bit ADC in SO-8 ■ Single Supply 5V or ±5V Operation ■ Sample Rate: 400ksps ■ Power Dissipation: 75mW Typ ■ 72dB S/(N + D) and -80dB THD at Nyquist

18-PIN

Abstract: 26-PIN ZIP20-P-400 MSM OKI
Contextual Info: O K I Semiconductor MSM5 1 1 0 0 1 B 1,048,576-Word x 1-Bit DY N A M IC R A M : N IBBLE M O D E TYPE DESCRIPTION The MSM511001B is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511001B is OKI's CMOS silicon gate process technology. The

ATT2C08

Abstract: XC1700 ATT ORCA fpga "Functional replacement" ATT17128A ATT1700 ATT1700A ATT3000 ATT3020 ATT3030
Contextual Info: Preliminary Data Sheet March 1995 • » v r - = M IW . Microelectronics ATT1700A Series Serial ROM Features Description • 32K, 64K, and 128K x 1 Serial ROMs for configura­ tion of ATT3000 and ORCA Series FPGAs The ATT1700A Series Serial ROM family provides

ic 921

Abstract: Motorola C-QuAM C-QuAM RADIO RECEIVER IC FM stereo u6 ej TA8120P AMP MODU II AM STEREO CQUAM i.c.921
Contextual Info: TOSHIBA-, 90 97 24 7 TOSHIBA. ELECTRONIC 02 dF | ^0^7547 001775b 0 |~ ELECTRONIC C-QUAM A M STEREO DECODER Unit in mm TA8120P is a C-QUAM®AM stereo decoding and pilot detection system IC. It contains L+R signal detector, L-R signal detector, pilot signal detector and matrix circuit.

T6420M

Abstract: TRIAC RCA T6420M T6420 Series Triac 2N5444 2N5444 2N5446 TRIAC 2N5442 T64200 T6420D T6420
Contextual Info: E SOLID STATE ~QÏ 3875081 G E SOLID STATE Triacs ’ w n o w u l u -J I n dF|3ô7SDÛ1 01E 17747 I 2N5441-2N5446, T6420 Series D File Num ber 593 TERMINAL DESIGNATIONS 40-A Silicon Triacs Features: • ■ • m 001 7 7* 4 7 MTI di/dt capability -1 0 0 A!¡is