DD32 Search Results

Contextual Info: Philips Semiconductors bbS3T31 DD32EQ5 TMfi HIAPX Product specification NPN 4 GHz wideband transistor crystal X3A-BFQ34 N AUER PHILIPS/MSCRETE DESCRIPTION b^E ]> MECHANICAL DATA NPN crystal used in BFQ34T SOT37 , BFQ34 (SOT172) and BFG35 (SOT223). Crystals are supplied as whole

Contextual Info: N AHER PHILIPS/DISCRETE bbS3R31 DD32S7H 17fl *A P X b'lE D Philips Semiconductors Preliminary specification W ideband amplifier module OM2082/86 DESCRIPTION A two-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use

Contextual Info: N AUER P H IL IP S /D IS C R E T E bTE D bb53R31 DD325T1 257 H A P X Philips Semiconductors Preliminary specification Wideband amplifier module OM2083/86 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use

BGY60

Abstract: DIN45004B 386 amplifier philips vhf amplifier module BI 340
Contextual Info: bbSBTBl Philips Sem iconductors Hybrid VHF push-pull amplifier module DD32347 3ÖÖ N AMER PHILIPS / D I S C R E T E PIN CONFIGURATION • Extremely low noise 1 input pre-stage • Silicon nitride passivation 2 common • Rugged construction 3 common • TiPtAu metallized crystals ensure

BGD504

Abstract: BGD502 DIN45004B 550 mhz catv power doubler
Contextual Info: bbS3T31 Philips Semiconductors DD3231b 7Q4 CATV power doubler amplifier modules IAPX Product specification BGD502;BGD504 N AUER PH ILI PS/DISCRE TE PINNING -SO T 115C FE A T U R E S • Extremely low noise • Silicon nitride passivation • Rugged construction

TM-35

Abstract: BGD106 DIN45004B
Contextual Info: Philips Semiconductors bbS3^31 DD32312 DLT IAPX Product specification CATV power doubler amplifier module BGD106 N AMER PHILIPS/DISCRETE PINNING -SOT115C FEATURES PIN • Excellent linearity PIN CONFIGURATION DESCRIPTION • Extremely low noise 1 input • Silicon nitride passivation

Contextual Info: bbS3R31 Philips Semiconductors DD32351 B OR M l APX Product specification CATV amplifier module — — BGY65 — N AflER PHILIPS/DISCRETE PINNING -SOT115C FEATURES PIN • Excellent linearity PIN CONFIGURATION DESCRIPTION • Extremely low noise 1 input • Silicon nitride passivation

BGY581

Abstract: BGY580 DIN45004B
Contextual Info: Philips Semiconductors • LtiS3T31 DD323Û1 54b CATV amplifier modules ■ APX IProductspecification BGY580;BGY581 N AP1ER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION PINNING-SOT115C • Excellent linearity • Extremely low noise DESCRIPTION PIN 1 input

Contextual Info: bbSBTBl Philips Semiconductors DD32411 DD3 • APX Pfoductspecification CATV amplifier module BGY685A N AUER PHILIPS/DISCRETE FEATURES PINNING - SOT115C PIN CONFIGURATION DESCRIPTION PIN • Excellent linearity • Extremely low noise 1 input • Silicon nitride passivation

Contextual Info: P hilips Sem iconductors DD32512 T2D BB A P X Product specification Hybrid integrated circuit VHF/UHF wideband amplifier OM2070B N AMER PHILIPS/DISCRETE DESCRIPTION b'JE PIN CONFIGURATION A three-stage wideband amplifier In hybrid integrated circuit technology

Contextual Info: bb53331 Philips Semiconductors DD32313 m 3 M l APX CATV amplifier module Product specification BGD506 — N AUER PHILIPS/DISCRETE PINNING-SOT115C FEATURES PIN CONFIGURATION DESCRIPTION PIN • Excellent linearity • Extremely low noise 1 input • Silicon nitride passivation

Contextual Info: HARRIS SEMICONt SECTOR MOE t M 43D2271 DD32M72 fl B H A S T- 7 5 - / / - Z . I ¡Jj H a r r i s C B C 2 D 2 2 1 2 1 1 2 C M O S 4 x 4 x 2 Crosspoint Switch With Control Memory A u g u s t 1991 Features D escription • L o w O N R e s is t a n c e . 7 5 V T y p . a t V d d = 1 2 V

a hybrid wideband amplifier

Abstract: OM2052
Contextual Info: Philips Semiconductc bbS3=131 DD324BD STD I APX Product specification Hybrid integrated circuit VHF/UHF wideband amplifier OM2052 N AMER PHILIPS/DISCRETE PINNING DESCRIPTION A two-stage wideband amplifier in hybrid integrated circuit technology on a thin-film substrate, intended

Contextual Info: N AMER PHILIPS/DISCRETE bTE bbS3T31 DD325bb DTI H A P X D Philips Semiconductors Preliminary specification Wideband amplifier module OM2082/60 DESCRIPTION A two-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use

uhf vhf booster

Abstract: UCD445 philips if catv amplifier DD32512 OM2070B vHF amplifier DIAGRAM booster-amplifiers wideband 28 HF VHF power amplifier module
Contextual Info: Philips Semiconductors bbâ^^Bl DD32512 T SD H APX Product specification Hybrid integrated circuit VHF/UHF wideband amplifier OM2070B N AMER PHILIPS/DISCRETE DESCRIPTION b'JE ]> PIN CONFIGURATION A three-stage wideband amplifier In hybrid integrated circuit technology

BGY85A

Abstract: BGY84A DIN45004B philips hybrid amplifier modules
Contextual Info: Philips Semiconductors bbSa'iBl DD323bb 23T IAPX Product specification BGY84A;BGY85A CATV amplifier modules N AMER PHILIPS/] ISCRETE PINNING -SOT115C FEATURES PIN • Excellent linearity PIN CONFIGURATION DESCRIPTION ♦ Extremely low noise 1 input • Silicon nitride passivation

BGE88

Abstract: philips hybrid amplifier modules
Contextual Info: Philips Sem iconductors DD3233b ST2 CATV amplifier module I APX Product specification BGE88;BGE88/01 N AMER PHILIPS/DISCRETE FEATURES PINNING -S O T 1 1 5 C PIN • Excellent linearity • Extremely low noise 1 PIN CONFIGURATION DESCRIPTION input • Silicon nitride passivation

cb pj 47 diode

Contextual Info: N AUER PHILIPS/DISCRETE b^E J> bbS3T31 DD3227fl 070 H A P X Product specification Philips Semiconductors NPN silicon planar epitaxial microwave power transistor _ LFE15600X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors

philips om350

Abstract: OM350
Contextual Info: ^ 5 3 ^ 3 1 DD3243E fl3fl H A P X OM350 _ N AMER PHILIPS/DISCRETE bRE ]> HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Two-stage wide-band amplifier in hybrid integrated circuit technique on a thin-film substrate, intended for RATV and MATV applications.

AXP 188 ba

Abstract: 21071-DA 2mb1100 AXP 188 IC 5188b RSAD 5111 1M 21071-BA 82378IB 21071AA d327c
Contextual Info: m DECchip 21071-AA, 21072-AA Core Logic Data Sheet m A p ril 1994 21071-AA, 21072-A A Features: • Supports the entire fam ily of the DECchip 21064 Alpha AXP m icroprocessors • DECchip 21071-AA: 128-bit cache/64-bit memory • DECchip 21072-AA: 128-bit cache/128-bit

sequential timer working

Abstract: rom 512x4 0011B KS57-series
Contextual Info: KS57C0208 Cl CM ELECTRONICS Mi crocontroll er DESCRIPTION The KS57C0208 single-chip 4-bit microcontroller is fabricated using an advanced CMOS process. With two 8-bit timer/counters, and 16 n-channel, open-drain I/O pins, the KS57C0208 offers an excellent design solution for a

82C54-2-P

Contextual Info: 47E » m Ö235b05 0G321flfl S • SIEG SIEMENS AKTIENGESELLSCHAF Av* "T-S W ^ y $ t\ SAB 82C54 Programmable CMOS Interval Timer SAB 82C54 up to 8 MHz SAB 82C54-2 up to 10 MHz • C om patible w ith all Siemens and m ost other microprocessors • Six program m able counter modes

Contextual Info: ÔSaSbQS D D 3 2 m b 4?E ì> SIEMENS 4 • S IE G SIEMENS AKTIENGESELLSCHAF Token Bus Modem TBM SAB 82511 Advanced Information • • • • • Carrier-band modem fully compatible with IEEE 802.4 and MAP Standard 5 and 10 Mbit/s data rate using phase-coherent FSK modulation

1N5148A

Abstract: 1N5139A MIL-STD-750 METHOD 2036 5961-N072 jantx 1n5139a
Contextual Info: 44E D MIL SPECS • G00Q125 D032flhb fi ■ M I L S The documentation and process conversion measures necessary to comply with this revision shall be completed by 93 • ! INCH-POUNO I 2 June MIL-S-19500/383A 2 March 1993 SUPERSEDING MIL-S-19500/383 14 January 1969