DDB6U Search Results

papst

Abstract: KM33 100S 150F KM111 ddb6u145n16k 4658 km11d
Contextual Info: B6U - Schaltung Luftselbstkühlung TA = 45 °C verstärkte Luftkühlung TA = 35°C mit ISOPACK Typenbezeichnung Bauelement click on "Maßbild" No. for download Kühlkörper Lüftertyp Maßbild B6U 230/310 - 60S - KM11-DDB6U85N-RC B6U 230/310 - 75S - KM33-DDB6U85N-RC

DDB6U25N16VR

Abstract: 76w9
Contextual Info: Technische Information / technical information DDB6U25N16VR IGBT-Module IGBT-modules Diode-Gleichrichter / diode-rectifier Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values ! "# $ " 1 &' *+, 23 % " # 4$ 2 5 2 2 # 3 2 52 2

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DDB6U75N16W1R VorläufigeDaten PreliminaryData Diode,Gleichrichter/Diode,Rectifier HöchstzulässigeWerte/MaximumRatedValues PeriodischeSpitzensperrspannung Repetitivepeakreversevoltage

k3532

Abstract: lm 3244
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DDB6U75N16W1R Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values 32C5 36!"#$6%1&3132214' *6+6,-.

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DDB6U25N16VR Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values A325EF36!F"#6$1B%3DE1322E14DDD &' 6 6*+,

Contextual Info: DDB6U70N12KOF Diodes 3-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current70 @Temp (øC) (Test Condition)85# V(RRM)(V) Rep.Pk.Rev. Voltage1.2k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.550¥ V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition)

ddb6u205n16k

Abstract: ddb6u145n16k 100S 150F KM11-DDB6U85N-RC KM33-DDB6U205N-RC km11d
Contextual Info: B6U - Schaltung Luftselbstkühlung TA = 45 °C mit ISOPACK verst. Luftkühlung TA = 35°C click on MB to select outline Typenbezeichnung SAP Bauelement KK Lüfter MB B6U 230/310 - 60S - KM11-DDB6U85N-RC B6U 230/310 - 75S - KM33-DDB6U85N-RC B6U 230/310 - 100S - KM33-DDB6U145N-RC

DDB6U30N08VR

Contextual Info: Technische Information / technical information DDB6U30N08VR IGBT-Module IGBT-modules Diode-Gleichrichter / diode-rectifier Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values !" #$ % # 1 2 $ & # $ !3% 2 4 2 2 8 2 4 2 2 !3% % 9

DDB6U75N16YR

Contextual Info: Technische Information / technical information DDB6U75N16YR IGBT-Module IGBT-modules Diode-Gleichrichter / diode-rectifier Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values ! $ 1 0 30 0 % ; " #$ % # &' 01 # $ 2% 0 3 0 0

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DDB6U75N16YR Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values !32C5C36"#$ 6%1C3B132214BBFB &' 6 6*+

Contextual Info: Technische Information / technical information DDB6U75N16YR IGBT-Module IGBT-modules Diode-Gleichrichter / diode-rectifier Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values ! $ 1 0 30 0 % ; " #$ % # &' 01 # $ 2% 0 3 0 0

Contextual Info: DDB6U110N14KOF Diodes 3-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current110 @Temp (øC) (Test Condition)85# V(RRM)(V) Rep.Pk.Rev. Voltage1.4k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.950¥ V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition)

RT89

Abstract: 4G87 DDB6U75N16W1R
Contextual Info: Technische Information / technical information DDB6U75N16W1R IGBT-Module IGBT-modules Diode-Gleichrichter / diode-rectifier Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values !" #$ % # ' ' 45 & # $ ! %4 64 4 $ 5 ; ' 4 64 4! %

Contextual Info: DDB6U60N10KOF Diodes 3-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current60 @Temp (øC) (Test Condition)85# V(RRM)(V) Rep.Pk.Rev. Voltage1.0k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.500¥ V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition)

FS300R12OE4P

Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
Contextual Info: Short Form Catalog 2012 High Power Semiconductors for Industrial Applications www.infineon.com/highpower Auch mit dem KuKa Kurzkatalog 2012 bieten wir Ihnen wieder einen Überblick über dieses Spektrum mit vielen Details. Durch ständigen Dialog mit unseren Kunden haben wir auch in

B2HKF

Abstract: TTB6C110N TDB6HK110N DDB6U160N B2HKF 250 TDB2HKF85 TDB2HKF B6U 205 N L TTB6C cr 4180
Contextual Info: Fast Asymmetric Thyristors Type V drm V rrm V V V dsm = V drm V rrm C tq=1 pS A 158 S 600. 1300* 15(50) It r s m A It s m i i 2dt Itavm^c kA A2s A/°C 10ms 10ms tvj max tvj max *103 400 2,5 30 V(TO) rT (di/d t)cr V m ii A/pis tvj = tvj = DIN I EC tvjma* tvj max 747-6

welding rectifier circuit board

Abstract: GTO hvdc thyristor SCR GTO three phase fully controlled rectifier scr control circuit for welding single phase fully controlled rectifier TT 2240 TDB6HK IGCT thyristor tt 330
Contextual Info: Product Information May 2006 Overview Bridge Rectifier, AC-Switches Product Information May 2006 Thyristors & Diodes 3000 VRRM[V] 2000 BIPOLAR POWER SEMICONDUCTORS from Infineon Technologies are applied in the most varied fields of applications in a power range from a few kilo watts up

FS20R06XE3

Abstract: aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd
Contextual Info: Power Semiconductors » Short Form Catalog » 2004 A Wide Range In Short Words. An Infineon Technologies Company go to content go to content eupec eupec European Power Semiconductors and Electronics Company – is situated in Warstein and is one of the world’s leading manufacturers of Power Semiconductors

Contextual Info: Fast Asymmetric Thyristors T ype V drm V rrm Itrsm Itsm l i 2dt Itavm^ c V V A kA A2s 10ms 10ms tvj max tvj max *103 A /°C 180° el sin V dsm = V drm V rrm C tq=1 pS A 158 S 600. 1300* 15(50) 400 2,5 30 V(TO) rT (d i/d t)cr V m i2 A / jjs tvj = tvi = DIN I EC

B2HKF

Abstract: b2hkf70n CS 13001 IC 7476 DDB6U110N AD60F DD86 ac switches isoPACK B6U60 TDB6HK165N
Contextual Info: Fast Asymmetric Thyristors Type V V drm V V dsm = rrm V V drm V It r s m A rrm C tq = 1 p S It s m i i 2dt kA A2s 10ms 10ms tyj max tyj max It a v m ^ c V (TO ) rT V m ii (di/dt)cr tq 1 ) (dv/dt)cr V gt Igt A/ps MS V/|JS DIN IEC 747-6 V mA tvj = 1 8 0 °

BSM 50 GX 120 DN2

Abstract: bsm 50 Gx 120 IGBT BSM20GD60DN2E3224 35GD120DN2E3224 25GD120DN2 25GD120DN2E3224 75GD120DN2 15gd120dn2e322 100GD120DN2 three phase bridge inverter 120 degree
Contextual Info: „Econo“my improvement in inverter-converter-moduldesign Gottfried Ferber, eupec GmbH, Warstein-Belecke Ralf Jörke, eupec GmbH, Warstein-Belecke Christian Lammers, Ruhr-Universität Bochum Dr. Andreas Lenniger, eupec GmbH, Warstein-Belecke Abstract: To realise an economy inverter construction, it is a good solution to use high reliable