DDDL Search Results

Contextual Info: MSS1Ô7E DDDlbDE 3TB • Advance Information HLX6408 512K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.5 (im Process (Leff = 0.4 nm) • Read/Write Cycle Times <20 ns (Typical) <25 ns (-55 to 125°C)

Contextual Info: 2 ö l2 b 7 E DDDLJTID H55 Dîalight LED CBI Circuit Board Indicator DIN 41494 Compatible 551 -xx01 LED PA R T NO . COLOR DATA S H E E T HIGH EFFICIENCY 551-0201 G ree n 551-0301 Y ellow 551-0401 Red 551-2501 O ra n g e 3 H D -xxxx ^ssm INTEGRAL RESISTOR, 5V

C431

Contextual Info: POWEREX INC 74 :deT| 7 2 ^ 4 ^ 1 DDDlllS □ 7 m - a j ' r ? ,ò 5.2 Condensed Electrical And Thermal Characteristics And Ratings GETYPE JEDEC — — C502 — C431-1/C431-2 — C602 — — 1500-2100 1300-1800 1700-2800 — 850 1000 940 980 500 @ 12° C390 x 550

Contextual Info: T - 03 PRELIMINARY DATA SHEET 5 -2 1 -8 5 1SE D |fl3fe.bDll DDDlfiEM 1 | SOLID STATE DEVICES INC SDR1P THRU SDR1W .75 AMP ULTRA FAST RECOVERY RECTIHER 1 3 0 0 -1 8 0 0 VOLTS 14830 Valley View Avenue La Mirada. California 90638 213 921-9660 TW X 910-583-4807

D741

Contextual Info: 7 cH D ? m DDDlbOÖ 315 « S A K J T-1 3 / 4 SANKEN Infrared LED SID1010 CM SID1010CXM SANKEN LIGHT EMITTING DIODES | FEATURES i ! ! I ! I i -High Efficency ’ Long-life/High Reliability -Wide Viewing Angle *High Sensitivity to Silicon Photo Detector -Excellent Linearity

2SC2673

Abstract: 2SD1661M IMD3 ROHM equivalent lcm3000 2SA937LN 2SA937MLN 2SB821 2SC2063 imb8 2SC3078M
Contextual Info: □ 1 ROHM CORP DE I V ñ E ñ ' m DDDllSt. 1 • FTR, ATR Types * New Producís A Maintenance part. |v • / • .Function "TV Tuner Mix Osc. Chroma FM RF Mix Osc. FM IF Local Osc. Conv. AM RF Local Osc. Conv. 19 19 50 2SC4045 11 50 *2SC3270M 300 100 ’

KD 605

Abstract: QDD1370 VHE2405 VHE2406 VHE2407 VHE2408
Contextual Info: nicRosEni coRP/ m i c r o SbE D • hllSRD? DDDlBb'i 732 ■ HÛL / 1 ^ 2 3 -0 1 MICRO QUALITY / S E M IC O N D U C TO R . INC 20 Amp Epitaxial Center Tapped High Efficiency Rectifiers 300 To 600 Volt VRRM Low Thermal Resistance Low Leakage High Surge Capability

1N5331

Contextual Info: 7294621 PQWEREX I NC ?4 D E ^V S 'm S l DDDltHS & n | 5.2 Condensed Electrical and Thermal Characteristics and Ratings \ RECTIFIERS 6 TO 12 AM PERES IN1341AIN134B 1N3987-90 1N3879-83 JED ECTY PE SPECIFICATIONS Max. average forward 1 phase operation T c = (°C)

VL86C110

Abstract: video processor acorn
Contextual Info: VLSI TECHNOLOGY INC Tñ DE] T3flñ347 DDDlt.4ci bf V L S I Technology , in c . T - l 5 -3 1 -v i VL86C110 RISC MEMORY CONTROLLER MEMC FEATURES DESCRIPTION • Drives up to 32 standard dynamic RA M s giving 4M bytes of real memory with 1M bit devices The memory controller (MEMC) acts as

GD4008B

Abstract: TH501 GD40 GoldStar T-H5-01 4008b
Contextual Info: GOLDSTAR TECHNOLOGY INC-. 4 0 2 8 7 5 7 GOLDSTAR TECHNOLOGY INC. D4E D | 04E M02Û7S7 DDDlbSG =i J / 01620 D T-H5-01 GD4008B 4-BIT BINARY FULL ADDER DESCRIPTION — The 4008B ii a 4-Bit Binary Full Adder with two 4-blt Data inputs AQ-A 3 , BQ-Bg ; a Carry Input (Cq), four Sum Outputs (Sq'Sq) and a Carry Output (C 4 ).

Contextual Info: 7 2 94 62 1 POWEREX INC Fast Recovery Rectifiers T1 D E l 72T4LE1 DDDlTt? T I~D I rrm I f av @ V rrm for 50% Duty Ifsm Fusing and Cycle, Half Tj(Max) Sine 1KHz (Amps x 103) @ 8.3 ms (Amps) 50 Hz 60 Hz (A2sec x 10*) (mA) 950 Tc=55°C lOOOf Tc = 79°C 1000

GD4028B

Abstract: 4028B GD4028BDC GD4028
Contextual Info: GOLDSTAR TECHNOLOGY INC-. D4E D | 4GEÖ7S7 DDDlbtD □ | 4028757 G O L D S T A R TECHNOLOGY INC. 04E 01660 D T - ¿>7-11- 5 1 GD4028B 1-OF-lO DECODER DESCRIPTIO N - The 4028B is a CMOS 4 Bit BCD to 1-of-IO active HIGH decoder. A 1-2*4-8 BCD code applied to inputs Ao through A 3 causes the selected output to be HIGH, the other nine will be

5R3S

Contextual Info: SOLID STATE DEVICES INC ZR3S PRELIMINARY DATA SHEET THROUGH 12E D |fl3bbDll DDDlfl7S 7 | 20R35 8 AMP EPION II HIGH SPEED RECITIFIER 20-200 VOLTS PHYSICAL DIMENSIONS T -J JL T-03-17 14830 VALLEY VIEW LA MIRADA, CA.90638 213 921-9660 TWX 910-583-4807 FAX 213-921-2396'

LA6960

Abstract: LA6980 LTZ-R15 LA-6960 5082-7633 LTZ-MG15 MAN58A 5082-7631 d567 FND507
Contextual Info: >HM CORP □ IE D I DDDllia D 5 ~ J ‘~ ^ I ~ 2 \ m Light Em itting Diodes I LED Glass Sealed Package Type Low-Voltage Regulators Optfcal/eleotricat charaoteristics(Ta=25’C ) Absolute maximum ratings(Ta=25'C) ; - * Type If Po Vr (mW ) (mA) (V) LTZ-M R15

Contextual Info: pin diode, precision 4t,E m fiDI:,fi611 DDDlbb^ 13s msec Digital Step Attenuators SCIENTIFIC/ MINI-CIRCUITS with TTL Control Inputs 0.5 to 20 dB steps, up to 35 dB attenuation 10 MHz to 1 GHz ZFAT TOAT F R EQ U EN C Y RAN G E M H z VSWR A TTEN U A TIO N

GD4555B

Abstract: GD4556B 45560 gd4556 45558
Contextual Info: GOLDSTAR TECHNOLOGY 4 0 2 8 7 5 7 GOLDSTAR TECHNOLOGY INCn IN C . D4E D | 4D2fl7S7 DDDlflll 04E 01811 D T-61-n-Sl GD4555B • GD4556B DUAL l-OF-4 DECODERS/DEMULTIPLEXERS D ESCRIPTIO N - The 4555B and 4556B are Dual 1-of-4 Decoders/Demultiplexers. Each decoder/

EUPEC TT 56 n 12

Abstract: EUPEC TT 56 n 16 EUPEC TD 56 N 08 EUPEC TT 56 n 14 sj 2028 EUPEC powerblock EUPEC TT 56 n TT56N TT 56 N 1200 DT56N
Contextual Info: 34032^7 blE T> EUPEC DDDlDh2 7b4 IUPEC ‘ 56 N . T D 5 6 N , DT 56 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state

ztuc

Abstract: MDD26 MDD26-04N1 inverter SM 1600 output 48 V E72873 MDD26-06N1 MDD26-08N1 MDD26-12N1 MDD26-14N1 MDD26-16N1
Contextual Info: 4bE D • MböbEEb DDDlElb H HIXY I X Y S CORP E ilX Y S _ MDD26 Diode Modules iTAV= 2 x 36 A VRRM= 400-1600 V V rsm VflRM Type V V Version 1 500 700 900 1300 1500 1700 400 600 BOO 1200 1400 1600 MDD26-04N1 MDD26-06N1 MDD26-08N1

Contextual Info: MITSUBISHI ELEK {LINEAR} flD D \ bBMTflSti DDDllHt 1 |~~" MITSUBISHI LINEAR ICs M51330P :W 6249826 MITSUBISHI DESCRIPTION -f ELEK ANALOG SWITCH LINEAR - The M51330P is a semiconductor integrated circuit contain: • fng an analog switch designed for use In a video system. It

VP0216N3

Abstract: VP0216N5 VP0216N2 VP0220 VP02C VP0220N2 VP0220N3 VP0220N5
Contextual Info: "Dl SUPERTEX INC 8773295 SUPERTEX DE 07735^5 DDDlbTT T | 01E 0 1 6 9 9 INC D P-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information i DS(OfJ (max) *D(ON) (min) TO-39 Order Number / Package TO-92 TO-220 -160V 16£2 0.75A VP0216N2 VP0216N3

vn1210 transistor

Abstract: VN1204N1 VN1204N2 VN1204N5 VN1204ND VN1206N1 VN1206N2 VN1206N5 VN1206ND VN1210N1
Contextual Info: 8773295 SUPERTEX □1 INC De | û 7 7 3 5 cI 5 DDDlbSD 1 T- ì f - f i N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information Order Number / Package BVoss/ ^OS<ON *D ON) b v ms (max) (min) TO-220 Dice 40V 0.30 20A VN1204N1 VN1204N2 VN1204N5

Contextual Info: T - 03 PRELIMINARY DATA SHEET 5 -2 1 -8 5 1SE D |fl3fe.bDll DDDlfiEM 1 | SOLID STATE DEVICES INC SDR1P THRU SDR1W .75 AMP ULTRA FAST RECOVERY RECT1RER 1 3 0 0 -1 8 0 0 VOLTS 14830 Valley View Avenue La Mirada. California 90638 2 13 9 2 1 -9 6 6 0 TW X 910-583-4807

R170 diode

Abstract: DFP170 westinghouse DIODES 800VRRM SM08PHN170
Contextual Info: liIESTCODE 34 S EMI COND UCT ORS D É T | cI7 D,í cISS DDDlbññ 5 ' 7 "- t z - í s i Technical Publication W ESTCODE ® SEMICONDUCTORS DFP170 Issue 1 February 1981 Fast Recovery Stud-Base Diode Type PHN/PHR170 150 amperes average: up to 1200 volts VRRM

VN1116N1

Abstract: VN1116N2 VN1116N5 VN1116ND VN1120N1 VN1120N2 VN1120N5 VN1120ND VN11C
Contextual Info: SUPERTEX I NC □1 DE~J 0 7 7 3 2 ^ 5 DDDlbMb N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information D Order Number / Package b v dgs DS ON (max) *D(ON) (min) TO-3 TO-39 TO-220 Dice 160V 3 ft 2.0A VN1116N1 VN1116N2 VN1116N5 VN1116ND 200V