DEATH METAL DIAGRAM Search Results
DEATH METAL DIAGRAM Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| TCK423G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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| TCK425G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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| TCK401G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E |
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| TCK420G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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| TCK422G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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DEATH METAL DIAGRAM Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: New Product SX081H150A4OU Vishay General Semiconductor Schottky Bare Die FEATURES a c e • Planar Schottky VBRM = 150 V • Low forward voltage drop • High frequency operation C (2) d b CIRCUIT DIAGRAM A (1) C (2) A (1) Notes (1) Front metallization side: Anode |
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SX081H150A4OU SX081H150A4OU 11-Mar-11 | |
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Contextual Info: New Product SX081H150A4OU Vishay General Semiconductor Schottky Bare Die FEATURES a c e • Planar Schottky VBRM = 150 V • Low forward voltage drop • High frequency operation C (2) d b CIRCUIT DIAGRAM A (1) C (2) A (1) Notes (1) Front metallization side: Anode |
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SX081H150A4OU SX081H150A4OU 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: New Product SX081H150A4OU Vishay General Semiconductor Schottky Bare Die FEATURES a c e • Planar Schottky VBRM = 150 V • Low forward voltage drop • High frequency operation C (2) d b CIRCUIT DIAGRAM A (1) C (2) A (1) Notes (1) Front metallization side: Anode |
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SX081H150A4OU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
death metal diagramContextual Info: New Product TY.S080A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 80 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM |
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S080A6. TY056S080A6OT TY073S080A6PT TY085S080A6OU TY102S080A6OU 11-Mar-11 death metal diagram | |
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Contextual Info: New Product SX.H045.4. Series Vishay General Semiconductor Schottky Bare Die FEATURES a c e • Planar Schottky VBRM = 45 V • Low forward voltage drop • High frequency operation C (2) d b CIRCUIT DIAGRAM A (1) C (2) A (1) Notes (1) Front metallization side: Anode |
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SX073H045A4OT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: New Product SX.H060.4. Series www.vishay.com Vishay General Semiconductor Schottky Bare Die FEATURES a c e • Planar Schottky VBRM = 60 V • Low forward voltage drop • High frequency operation C (2) d b CIRCUIT DIAGRAM A (1) C (2) A (1) Notes (1) Front metallization side: Anode |
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SX073H060A4OT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
SX073H060S4PTContextual Info: New Product SX.H060.4. Series www.vishay.com Vishay General Semiconductor Schottky Bare Die FEATURES a c e • Planar Schottky VBRM = 60 V • Low forward voltage drop • High frequency operation C (2) d b CIRCUIT DIAGRAM A (1) C (2) A (1) Notes (1) Front metallization side: Anode |
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SX073H060A4OT SX073H060S4PT SX110H060S4PU SX128H060S4OV 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
S3060Contextual Info: New Product TY.S060A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 60 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM |
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S060A6. TY059S060A6OT TY078S060A6PU TY085S060A6OU 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 S3060 | |
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Contextual Info: TY.S150A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 150 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM A (1) C (2) |
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S150A6. TY056S150A6OT TY080S150A6OU TY093S150A6OU TY102S150A6OU 11-Mar-11 | |
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Contextual Info: New Product SX.H045.4. Series Vishay General Semiconductor Schottky Bare Die FEATURES a c e • Planar Schottky VBRM = 45 V • Low forward voltage drop • High frequency operation C (2) d b CIRCUIT DIAGRAM A (1) C (2) A (1) Notes (1) Front metallization side: Anode |
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SX073H045A4OT SX073H045S4PT SX085H045S4PU SX110H045A4OU SX110H045S4PU 11-Mar-11 | |
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Contextual Info: New Product SX.H060.4. Series www.vishay.com Vishay General Semiconductor Schottky Bare Die FEATURES a c e • Planar Schottky VBRM = 60 V • Low forward voltage drop • High frequency operation C (2) d b CIRCUIT DIAGRAM A (1) C (2) A (1) Notes (1) Front metallization side: Anode |
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SX073H060A4OT SX073H060S4PT SX110H060S4PU SX128H060S4OV 11-Mar-11 | |
SX061Contextual Info: New Product SX.H100.4. Series Vishay General Semiconductor Schottky Bare Die FEATURES a c e • Planar Schottky VBRM = 100 V • Low forward voltage drop • High frequency operation C (2) d b CIRCUIT DIAGRAM A (1) C (2) A (1) Notes (1) Front metallization side: Anode |
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SX050H100S4PT SX061H100S4PT SX067H100S4PT SX093H100A4OU SX119H100S4PU 08hay 11-Mar-11 SX061 | |
SX085H045S4PUContextual Info: New Product SX.H045.4. Series Vishay General Semiconductor Schottky Bare Die FEATURES a c e • Planar Schottky VBRM = 45 V • Low forward voltage drop • High frequency operation C (2) d b CIRCUIT DIAGRAM A (1) C (2) A (1) Notes (1) Front metallization side: Anode |
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SX073H045A4OT SX073H045S4PT SX085H045S4PU SX110H045A4OU SX110H045S4PU 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: New Product TY.S060A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 60 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM |
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S060A6. TY059S060A6OT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: New Product TY.S060A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 60 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM |
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S060A6. TY059S060A6OT TY078S060A6PU TY085S060A6OU 11-Mar-11 | |
277AContextual Info: TY.S120.6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 120 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM A (1) C (2) |
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TY080S120A6OU TY080S120S6PU TY093S120A6OU TY102S120A6OU TY102S120S6PU TY119S120A6OU 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 277A | |
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Contextual Info: TY.S120.6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 120 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM A (1) C (2) |
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2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
SX050
Abstract: sx061 SX DO-214AA
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SX050H100S4PT SX061H100S4PT SX067H100S4PT SX093H100A4OU SX119H100S4PU 08trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. SX050 sx061 SX DO-214AA | |
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Contextual Info: TY.S150A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 150 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM A (1) C (2) |
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S150A6. TY056S150A6OT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: New Product SX.H100.4. Series Vishay General Semiconductor Schottky Bare Die FEATURES a c e • Planar Schottky VBRM = 100 V • Low forward voltage drop • High frequency operation C (2) d b CIRCUIT DIAGRAM A (1) C (2) A (1) Notes (1) Front metallization side: Anode |
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SX050H100S4PT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: New Product TY.S080A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 80 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM |
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S080A6. TY056S080A6OT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: New Product TY.S080A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 80 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM |
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S080A6. TY056S080A6OT TY073S080A6PT TY085S080A6OU TY102S080A6OU 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: TY.S150A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 150 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM A (1) C (2) |
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S150A6. TY056S150A6OT TY080S150A6OU TY093S150A6OU TY102S150A6OU 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
mcdtsjw6Contextual Info: REVISIONS PART NO. MDD and PBDD Series ECN # REV DESCRIPTION DRAWN DATE CHECKD DATE APPRVD DATE - A RELEASED Kiran 18/04/09 Suresh 18/04/09 Farnell 04/05/09 Circuit Diagram PCB Layout Scale 8:1 Dimensions : Millimetres Inches This data sheet and its contents (the "Information") belong to the Premier Farnell Group |
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M10002135 mcdtsjw6 | |