DELTA TP 02 Search Results

AD7720

Contextual Info: ANALOG DEVICES CMOS Sigma-Delta Modulator AD7720 F U N C T IO N A L B L O C K D IA G R A M FEATURES 12.5 M H z M a s te r Clock Frequency 0 V to +2.5 V or ± 1 .2 5 V In p u t Range S in g le Bit O u tp u t S tre am 90 dB D y n a m ic Range P o w er S u pp lies: A V D D , D V D D : +5 V

Contextual Info: RECTRON DB3 SEMICONDUCTOR TECHNICAL SPECIFICATION TRIGGER DIODES FEATURES * VBO: 32V/34V/40V VERSIONS * Low Breakover Current DO-35 DESCRIPTION .022 0.56 DIA. .018 (0.46) High reliability glass passivation insuring parameter stability and protection against junction contamination

Contextual Info: LLDB3 AND LLDB3SEL TRIGGER DIODES FEATURES * VBO: 32V/34V/40V VERSIONS * Low Breakover Current LL-34 DESCRIPTION High reliability glass passivation insuring parameter stability and protection against junction contamination .059 1.50 .055 (1.40) .020 (0.50)

Contextual Info: LLDB3 AND LLDB3SEL TRIGGER DIODES FEATURES * VBO: 32V/34V/40V VERSIONS * Low Breakover Current LL-34 DESCRIPTION High reliability glass passivation insuring parameter stability and protection against junction contamination .063 1.60 .055 (1.40) .020 (0.50)

aerovox arpm

Abstract: aerovox general purpose AC capacitor 26X1 arem104 AEROVOX AFPS 8-NP aerovox capacitor ac BE 4X12 AREM47363KFIKZZ arem
Contextual Info: Aerovox Corp. Axial Film Capacitors Metallized Polyester and Polypropylene . your source for the Ultimate in Reliability RoHS Compliant 167 John Vertente Blvd. New Bedford, MA 02745 Tel: 508 994-9661 Fax: (508) 995-3000; E-mail: sales@aerovox.com; Website: www.aerovox.com

qml-38535

Abstract: 54ACT 54ACT240 GDFP2-F20 CQCC2-N20
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED Add RHA data. Editorial changes throughout. - jak 92-07-09 Monica L. Poelking Change delay time for tpLz and tpHz for device class M. Editorial changes throughout - jak. 99-02-02 Monica L. Poelking REV SHEET

Contextual Info: ispGDS22/14 Discontinued Product PCN #02-06 . Contact Rochester Electronics for Availability. in-system programmable Generic Digital Switch TM Functional Block Diagram (ispGDS22) • ELECTRONIC SIGNATURE FOR IDENTIFICATION

TSC500

Abstract: 324 EZ 948 BU221 bf063 ST EZ 728 358 ez 802 bfs 417 130 nm CMOS standard cell library ST BF080 bf068
Contextual Info: TSC500 SERIES 1-pm CMOS STANDARD CELLS RELEASE 1.2, APRIL 1989 • High-Performance, 1-pin EPIC CMOS Efficiently Achieves System-Level Designs BOND PAD COMPILER RAM MSI FUNCTION • TSC500 Library Includes Macros for - Static RAMs, Register Files - First-In First-Out Memories

1N6664 R

Contextual Info: * METRIC The documentation and process conversion measures necessary to comply shall with this document shall be completed by 3 March 2011. * MIL-PRF-19500/594B 3 December 2010 SUPERSEDING MIL-PRF-19500/594A 3 July 1998 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,

1N6910

Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 12 January 2012. INCH-POUND MIL-PRF-19500/723C 12 October 2011 SUPERSEDING MIL-PRF-19500/723B 28 February 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER,

Contextual Info: T-75 -11-05 ADVANCE INFORMATION 0/159/1/020 ANALOGUE FILTER MONITOR ANALOGUE SUPPLY VOLTAGE DIGITAL SUPPLY VOLTAGE QAIN AOJU&T FX3090 DELTA CODEC HYBRID FEATURES *MEETS EUROCOM D1-IA8 SPECIFICATION *VERY FLEXIBLE POWER SUPPLY ^PERFECT IDLE PATTERN *GAIN ADJUSTMENT FACILITY

Contextual Info: MfcVï TaNSil W ire Bondable Silicon Chip Resistors Welwyn WBC SERIES • U ltra-stab le TaNSil® resistors on silicon • MIL screening available • High resistor density • Highly reliable aluminium bond pads Gold bond pads available • Discrete or tapped schematics

Contextual Info: bEUM Rev.: D RoHS C u s to m e r P a r t No.: Delta P a r t No.: RJGE1UC5501-R P a r t Name: RJ45 ICM (1000 B a s e - T 1 Port'! COMPLIANT 4. M ech anical D im ension: A n l.a0[0.071]MAX n ¡r - f c 5 im ii j mmm i, □ m " 3.18 [0.125]REF 10.93 [0.430]

g22v10

Abstract: 22V10 PAL CMOS device delta UPS circuit diagram GAL 16 v 8 D p22v10 wincupl Pal programming ATF22V10CZ ATF22LV10CZ ATF22V10C
Contextual Info: Features • • • • • • • • • • Industry-standard Architecture 12 ns Maximum Pin-to-pin Delay Zero Power – 25 µA Maximum Standby Power CMOS and TTL Compatible Inputs and Outputs Advanced Electrically-erasableTechnology – Reprogrammable

Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 June 2013. INCH-POUND MIL-PRF-19500/682B 1 March 2013 SUPERSEDING MIL-PRF-19500/682A 16 March 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY

5962-9552102MYA

Abstract: 5962-9215601MYA 5962-9322101M 5962-9215602mxa A1020B-PG84B 5962-9552102mxa 152 LSK
Contextual Info: Military Field Programmable Gate Arrays Features ACT 3 Features • Highly Predictable Performance with 100 Percent Automatic Placement and Routing • Highest-Performance, Highest-Capacity FPGA Family • Device Sizes from 1200 to 10,000 gates up to 25,000 PLD

Multiple sensor Capacitive Touch Sensor

Abstract: Capacitive touch capacitive touch sensor one channel touch "Capacitive Touch Sensor" Touch Sensor Capacitive PCB Capacitive Touch Sense Multiple sensor Capacitive Touch Sense "Touch Sensor"
Contextual Info: CAP1005 / CAP1006 5 and 6 Channel Capacitive Touch Sensor PRODUCT FEATURES Datasheet General Description Applications The CAP1006 and CAP1005 are multiple channel Capacitive Touch sensors. The CAP1006 contains six 6 individual Capacitive Touch sensor inputs while the

190-32 UNF-2a

Abstract: 1N5812 diode 1N5812 1N5814 1N5816 1N5816 diode 478D
Contextual Info: MIL SPECS 44E » • DDQQ12S DG34E74 SST ■ M I L S j INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 February 1994 MIL-S-19500/478E 25 October 1993 SUPERSEDING MIL-S-19500/478D

2n4957 die

Contextual Info: The documentation and process conversion measures necessary to comply with this document shall be completed by 30 June 2013. INCH-POUND MIL-PRF-19500/426G 30 March 2013 SUPERSEDING MIL-PRF-19500/426F 29 June 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, AMPLIFIER

807 GE

Abstract: fl 807
Contextual Info: Axial Leaded Capacitors Metallized Polyester Dielectric Tape Wrapped with Epoxy Endfill Type AREM, AFEO Insulation Resistance Category <100VDC >100VDC 1,000 5,000 MegOhms x | if MegOhms Maximum Need Not Exceed 10,000 30,000 Test Voltage 50VDC 100VDC Electrification Time

434 289

Abstract: 54175 S085 54151 gen 24lJ IPI04LJ NA220 DTB20
Contextual Info: TGC100M MILITARY SERIES 1-/im CMOS GATE ARRAYS Release 2.0, A PR IL 1989 * AC PERFORMANCE TEST STRUCTURE Fully Characterized for M ilitary Applications — Product Fully Compliant w ith the Requirements of M IL -S T D -883 Paragraph 1.2.1 Is Available — Production Processing Is in Accordance

CAP1106

Abstract: smsc marking
Contextual Info: CAP1105 / CAP1106 5 and 6 Channel Capacitive Touch Sensor PRODUCT FEATURES Datasheet General Description Applications The CAP1106 and CAP1105, which incorporate SMSC’s RightTouch 1 technology, are multiple channel Capacitive Touch sensors. The CAP1106 contains six 6 individual

MARKING CODE WU

Contextual Info: Axial Leaded Capacitors Metallized Polypropylene Dielectric Tape Wrapped with Epoxy Endfill Type ARPM Insulation Resistance Category mmm 200,000 MegOhms Maximum Need Not Exceed 500,000 Test Voltage 100VDC Electrification Time 1Minute Performance Testing

cpga dimensions

Abstract: 132-PIN CERAMIC PIN GRID ARRAY CPGA actel a1240 5962-9322101MXC 10KRESISTOR NET IC LM 384 gn
Contextual Info: HiRel Field Programmable Gate Arrays F ea t u re s 3200DX * Highly Predictable Performance with 100 Percent Autom atic Placement and Routing * 100 MHz System Logic Integration * Device Sizes from 1200 to 30,000 gates * Highest Speed FPGA SRAM, up to 4 Kbits Configurable