Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) N-Channel = > ≤ 1000V 1.6A 10Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings 1000
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IXTY1R6N100D2
IXTA1R6N100D2
IXTP1R6N100D2
O-252
O-263
O-220)
O-263
O-220
O-220AB
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information Depletion Mode MOSFET VDSX ID on IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 RDS(on) N-Channel = > ≤ 1000V 800mA 21Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings 1000 V
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IXTY08N100D2
IXTA08N100D2
IXTP08N100D2
800mA
O-252
O-263
O-220)
O-263
O-220
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IXTP08N100D2
Abstract: IXTA08N100D2 IXTY08N100D2 08N100 08n10 500VID ixtp08n100 T08N
Text: Preliminary Technical Information IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) N-Channel = > ≤ 1000V 800mA 21Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings 1000 V
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IXTY08N100D2
IXTA08N100D2
IXTP08N100D2
800mA
O-252
O-263
O-220)
O-263
O-220
IXTP08N100D2
IXTA08N100D2
IXTY08N100D2
08N100
08n10
500VID
ixtp08n100
T08N
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IXTP1R6N100D2
Abstract: IXTY1R6N100D2
Text: IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 1000V 1.6A 10Ω Ω N-Channel TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings TO-263 AA (IXTA) 1000 V Continuous ±20
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IXTY1R6N100D2
IXTA1R6N100D2
IXTP1R6N100D2
O-252
O-263
O-220AB
O-220)
O-252
O-220
IXTP1R6N100D2
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IXTH6N100D2
Abstract: No abstract text available
Text: Preliminary Technical Information Depletion Mode MOSFET VDSX ID on IXTA6N100D2 IXTP6N100D2 IXTH6N100D2 = > ≤ RDS(on) 1000V 6A 2.2Ω Ω N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings 1000 V Continuous
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IXTA6N100D2
IXTP6N100D2
IXTH6N100D2
O-263
O-220AB
O-220
O-247)
O-263
O-247
IXTH6N100D2
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T3N100
Abstract: IXTA3N100D2 3n100 ixta3n100 IXTP3N100D2
Text: Preliminary Technical Information IXTA3N100D2 IXTP3N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 1000V 3A 5.5Ω Ω N-Channel TO-263 AA (IXTA) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX G Maximum Ratings S 1000 V Continuous ±20 V VGSM
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IXTA3N100D2
IXTP3N100D2
O-263
O-220)
O-263
O-220
O-220AB
100ms
3N100D2
T3N100
IXTA3N100D2
3n100
ixta3n100
IXTP3N100D2
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IXTH6N100D2
Abstract: t6n100 IXTA6N100D2 IXTP6N100D2 T6N10 6N100D2 diode 6A 1000v
Text: Preliminary Technical Information IXTA6N100D2 IXTP6N100D2 IXTH6N100D2 Depletion Mode MOSFET VDSX ID on = > ≤ RDS(on) 1000V 6A 2.2Ω Ω N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings 1000 V Continuous
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IXTA6N100D2
IXTP6N100D2
IXTH6N100D2
O-263
O-220AB
O-220
O-247)
O-263
O-247
IXTH6N100D2
t6n100
IXTA6N100D2
IXTP6N100D2
T6N10
6N100D2
diode 6A 1000v
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Untitled
Abstract: No abstract text available
Text: Depletion Mode MOSFET VDSX ID on IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 RDS(on) = > ≤ 1000V 1.6A 10Ω Ω N-Channel TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings TO-263 AA (IXTA) 1000 V Continuous ±20
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IXTY1R6N100D2
IXTA1R6N100D2
IXTP1R6N100D2
O-252
O-263
O-220)
O-263
O-220
O-220AB
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXTA3N100D2 IXTP3N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 1000V 3A 5.5Ω Ω N-Channel TO-263 AA (IXTA) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ
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IXTA3N100D2
IXTP3N100D2
O-263
O-220)
O-263
O-220
O-220AB
100ms
3N100D2
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IXTA08N100D2HV
Abstract: No abstract text available
Text: Advance Technical Information IXTA08N100D2HV High Voltage Depletion Mode MOSFET VDSX ID on RDS(on) = > 1000V 800mA 21 N-Channel TO-263HV G S Symbol Test Conditions Maximum Ratings VDSX TJ = 25C to 150C 1000 V VDGX TJ = 25C to 150C, RGS = 1M
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IXTA08N100D2HV
800mA
O-263HV
062in.
100ms
08N100D2
IXTA08N100D2HV
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) N-Channel = > ≤ 1000V 1.6A 10Ω Ω TO-252 (IXTY) G S D (TAB) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 1000 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ
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IXTY1R6N100D2
IXTA1R6N100D2
IXTP1R6N100D2
O-252
O-220)
O-263
100ms
1R6N100D2
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08N100D2
Abstract: No abstract text available
Text: Advance Technical Information IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) N-Channel = > ≤ 1000V 800mA 21Ω Ω TO-252 (IXTY) G S D (TAB) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 1000 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ
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IXTY08N100D2
IXTA08N100D2
IXTP08N100D2
800mA
O-252
O-220)
O-263
100ms
08N100D2
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IXTP01N100D
Abstract: 01N100D TO-251 weight IXTU01N100D IXTY01N100D IXTP01N100 depletion mode mosfet n-channel 1000V
Text: IXTY01N100D IXTU01N100D IXTP01N100D High Voltage Power MOSFET VDSX = ≤ RDS on N-Channel, Depletion Mode 1000V 80Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 1000 V VDGX TJ = 25°C to 150°C 1000 V TO-251 (IXTU)
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IXTY01N100D
IXTU01N100D
IXTP01N100D
O-252
O-251
O-220)
TY01N100D
100ms
IXTP01N100D
01N100D
TO-251 weight
IXTU01N100D
IXTY01N100D
IXTP01N100
depletion mode mosfet n-channel 1000V
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Untitled
Abstract: No abstract text available
Text: High Voltage Power MOSFET VDSX IXTY01N100D IXTU01N100D IXTP01N100D = ≤ RDS on 1000V 80Ω Ω N-Channel, Depletion Mode TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 1000 V VDGX TJ = 25°C to 150°C 1000 V TO-251 (IXTU)
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IXTY01N100D
IXTU01N100D
IXTP01N100D
O-252
O-251
100ms
01N100D
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LCA717
Abstract: 0-10v to 4-20ma cpc9909 IX2127 PM1206 en50130-4 CPC1020 CPC1002N deutsch relays inc 35v, 1amp smps circuits
Text: Clare, a wholly owned subsidiary of IXYS Corporation, located 20 miles north of Boston, Massachusetts, USA, designs, manufactures, and markets a wide variety of semiconductor devices. Clare’s wafer fabrication facility features a 600V BCDMOS process on a bonded-wafer, silicon-on-insulator, trench-isolated
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MX887P
MX844
12-Bit
MX887D
LCA717
0-10v to 4-20ma
cpc9909
IX2127
PM1206
en50130-4
CPC1020
CPC1002N
deutsch relays inc
35v, 1amp smps circuits
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cpc9909
Abstract: 6-pin smps power control ic cpc1943 MXHV9910 0-10v to 4-20ma Line Driver SHDSL IX2127 CPC1230 opamps catalog deutsch relays inc
Text: Clare, a wholly owned subsidiary of IXYS Corporation, located 20 miles north of Boston, Massachusetts, USA, designs, manufactures, and markets a wide variety of semiconductor devices. Clare’s wafer fabrication facility features a 600V BCDMOS process on a bonded-wafer, silicon-on-insulator, trench-isolated
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MX887P
MX844
12-Bit
MX887D
cpc9909
6-pin smps power control ic
cpc1943
MXHV9910
0-10v to 4-20ma
Line Driver SHDSL
IX2127
CPC1230
opamps catalog
deutsch relays inc
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A NEW GENERATION OF HIGH PERFORMANCE MOSFET DRIVERS FEATURES HIGH CURRENT, HIGH SPEED OUTPUTS
Abstract: CPC1225N
Text: 9 # #0 Clare 2009/2010 Product Catalog Semiconductor Products Complete data sheets are available for downloading at Clare’s website: http://www.clare.com Clare, a wholly owned subsidiary of IXYS Corporation, located 20 miles north of Boston, Massachusetts, USA, designs,
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N1016,
D-68623
CH-2555
A NEW GENERATION OF HIGH PERFORMANCE MOSFET DRIVERS FEATURES HIGH CURRENT, HIGH SPEED OUTPUTS
CPC1225N
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1000w inverter PURE SINE WAVE schematic diagram
Abstract: 1000w inverter PURE SINE WAVE schematic diagram smps 500w half bridge SCHEMATIC 1000w Power Semiconductor Applications Philips Semiconductors SCHEMATIC 1000w smps smps circuit diagram 48V SMPS 1000w "Power Semiconductor Applications" Philips BU2508 Transistor 500w SINE WAVE inverter schematic diagram smps 1kW
Text: S.M.P.S. Power Semiconductor Applications Philips Semiconductors CHAPTER 2 Switched Mode Power Supplies 2.1 Using Power Semiconductors in Switched Mode Topologies including transistor selection guides 2.2 Output Rectification 2.3 Design Examples 2.4 Magnetics Design
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IXEP1400
Abstract: CPC7601 CPC1907B CPC1106N CPC1004N CPC1006N CPC1009N CPC1114N CPC1333 IX21844
Text: Semiconductor Product Catalog IXYS Integrated Circuits Division IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division designs, manufactures, and markets a wide variety of semiconductor devices, and is a major provider of optically isolated electronic products.
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CH-2555
N1016,
IXEP1400
CPC7601
CPC1907B
CPC1106N
CPC1004N
CPC1006N
CPC1009N
CPC1114N
CPC1333
IX21844
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IXEP1400
Abstract: CPC1706 CPC1020N
Text: Semiconductor Product Catalog IXYS Integrated Circuits Division IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division designs, manufactures, and markets a wide variety of semiconductor devices, and is a major provider of optically isolated electronic products.
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CH-2555
N1016,
IXEP1400
CPC1706
CPC1020N
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LBA716
Abstract: IXDD630 DARLINGTON TRANSISTOR ARRAY V/CPC3701 CPC1006N CPC1014N CPC1019N CPC1219
Text: Semiconductor Product Catalog IXYS Integrated Circuits Division In April, 2012, Clare, Inc., officially became IXYS Integrated Circuits Division. IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division
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N1016,
CH-2555
LBA716
IXDD630
DARLINGTON TRANSISTOR ARRAY
V/CPC3701
CPC1006N
CPC1014N
CPC1019N
CPC1219
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flyback samsung
Abstract: flyback transformer samsung
Text: INTRODUCTION TO SAMSUNG’S SFET FAMILY Since the introduction of the first Power MOSFET products in the mid-70's, these devices have emerged as widely ac cepted components in medium-to-high frequency power control applications. Advances in Doubled Diffused MOS DMOS
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mid-70
flyback samsung
flyback transformer samsung
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flyback samsung
Abstract: flyback 1000w SMPS 1000W smps design 1000w
Text: INTRODUCTION TO SAMSUNG’S SFET FAMILY Since the introduction of the first Power MOSFET products in the m id-70’s, these devices have emerged as widely ac cepted components in mediunv-to-high frequency power control applications. Advances in Doubted Diffused MOS DMOS
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PDF
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id-70
flyback samsung
flyback 1000w
SMPS 1000W
smps design 1000w
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hitachi mosfet power amplifier audio application
Abstract: 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 K429 HITACHI 2SJ56 k399 Hitachi 2sk176 2sj56
Text: APPLICATION NOTE 1-9 Pov/er MOS FET • ' Bo* 3 V•? * ¿ 'S r ^ m is y 701 S ! Reo N o 64 1688 07 P O BO X 1194. R A N D tíU R G , 2 1 2 5 M F K E N T H O US E D O V E R S T R E E T . R A N D B U R G T V L , 21 9 4 0 1 1 7 8 9 1 4 0 0 /2 T E L E X 4 -2 0 4 5 2 F A X 1 0 1 1 )7 8 7 0 2 6 3
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RE79-24
hitachi mosfet power amplifier audio application
2SK215 equivalent
PM4550C
2sd667 2sb647
2SD667 equivalent
2SJ99
K429
HITACHI 2SJ56
k399
Hitachi 2sk176 2sj56
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