DEPLETION P-CHANNEL MOSFET Search Results

P-Channel Depletion Mosfets

Abstract: mosfet 2N3796 2N3797 2N3796 MFE825 MFE3002 P-Channel Depletion Mosfet depletion mode mosfet 100 MHz MFE3003 N5484
Contextual Info: MOSFETs Single Gate FIELD-EFFECT TRANSISTORS continued P-CHANNEL Enhancement MOSFETs MOSFETs are available in either depletion/enhancement or enhancement mode (in general, depletion/enhancement devices are operated in the depletion mode and are referred to as depletion devices). They are available in both N- and P-channel,

Depletion MOSFET

Abstract: switching transistor 331 b771D n channel depletion MOSFET N-Channel Depletion-Mode MOSFET BSD12 free transistor gbs transistor convertor 5 V to -5 V Depletion
Contextual Info: 711Gä2t> Q0b770ö 217 • P H I N BSD12 MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon M OS field-effect transistor o f the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.

Contextual Info: DMCD N-Channel _ Depletion-Mode MOSFET in c o r p o r a te d DEVICE TYPE PACKAGE Single TO-72 TO-206AF • SD2100 Single Chip • Available as DMCD1CHP TYPICAL CHARACTERISTICS Depletion Mode - Drain Current & On-Reslstance vs. Gate-Source Cutoff Voltage

Contextual Info: bbS3=i31 002544=1 =105 * A P X BSD22 b7E D N AMER PHI LIP S/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type. The transistor is sealed in a SOT-143 envelope and features a low ON-resistance and low capacitances.

SD2100

Contextual Info: SD2100 N-Channel Depletion-Mode Lateral DMOS FET in c o r p o ra t e d The SD2100 is a depletion-mode MOSFET which utilizes our lateral DMOS process to provide low capacitance, fast switching, and high operating frequency. This DMOS process effectively bridges the

Contextual Info: BEE D • flE3b320 0017173 4 « S I P SIPMOS N Channel MOSFET T - S á M S" SIEMENS/ SPCLi SEMICONDS • SIPMOS - depletion mode • Draln-source voltage • Continuous drain current Vas = 250V /„ = 0.04A • Drain-source on-resistance • Total power dissipation

BF960

Abstract: transistor BF960 BF-960 transistor BG 20
Contextual Info: 711002b Püb7531 fi3 a H P H IN BF960 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected, intended fo r use in u.h.f. applications in television tuners and professional communication equipment.

Contextual Info: • P hilips Sem iconductors Data sheet status Product specification date of issue October 1990 FEATURES • Short channel transistor with high ratio lYfSI/C15. • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor

Contextual Info: 32E D • Ö23b32ü 0017107 s m s i p BSP 149 SIPMOS N Channel MOSFET T - 3 *7 Preliminary Data • SIPMOS - depletion mode • Drain-source voltage • Continuous drain current • Drain-source on-resistance • Total power dissipation Type M arking O rdering code for

Contextual Info: Supertex inc. LND150 N-Channel Depletion-Mode MOSFET Ordering Information Order Number / Package BVDSX / ^DS ON Idss b v dgx (max) (min) TO-92 TO-243AA* Die 500V 1.0K& 1.0mA LND150N3 LND150N8 LND150ND * Sam e as SO T-89. P roduct shipped on 2000 piece c a rrie r tape reels.

N-Channel Depletion-Mode MOSFET

Abstract: TA 7061 52426 ND2020L
Contextual Info: Temic ND2012L/2020L Semiconductors N-Channel Depletion-Mode MOSFET Transistors Product Summary P a rt N um ber V<BR DSV M in V) ND2012L ND2020L 200 Features • • • • • High Breakdown Voltage: 220 V Normally “On” Low rDS Switch: 9 Q Low Input and Output Leakage

Contextual Info: Supertex inc. LND150 N-Channel Depletion-Mode MOSFET Ordering Information Order Number / Package b v dsx/ ^DS ON Idss b v dgx (max) (min) TO-92 TO-243AA* Die 500V 1.0KQ 1.0mA LND150N3 LND150N8 LND150ND * Sam e as SO T-89. P roduct shipped on 2000 piece c a rrie r tape reels.

GBAN-PVI-1

Abstract: ca3103 266CT125-3E2A IR7509 ic cd4093 oscillator with CD4093 Types dc to dc chopper zener in4148 240XT250-3EA2 IRF540 complementary
Contextual Info: Index AN-937 v.Int Gate Drive Characteristics and Requirements for HEXFET s Topics covered: Gate drive vs base drive Enhancement vs Depletion N vs P-Channel Max gate voltage Zener diodes on gate? The most important factor in gate drive: the impedance of the gate drive circuit

266CT125-3E2A

Abstract: GBAN-PVI-1 240XT250-3EA2 HEXFET Power MOSFET designer manual CD4093 CD4093 IC details IRF540 complementary ca3103 IR7509 Toroid 3E2A
Contextual Info: AN-937 v.Int Gate Drive Characteristics and Requirements for HEXFET s Topics covered: Gate drive vs base drive Enhancement vs Depletion N vs P-Channel Max gate voltage Zener diodes on gate? The most important factor in gate drive: the impedance of the gate drive circuit

Contextual Info: bbS3^31 00547S3 111 « A P X N AMER PHILIPS/DISCRETE BF997 b7E ]> SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic S 0T143 microminiature envelope with source and substrate interconnected, intended for u.h.f. and v.h.f. applications, such as u.h.f./v.h.f. television

BF981

Abstract: bf981 TRANSISTOR Transistor BF981 DUAL GATE MOS-FET Z826 AGT transistor
Contextual Info: 7110fl2b G0b7SS3 MTT • P H I N BF981 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected, intended for V H F applications, such as V H F television tuners, FM tuners and professional communi-'

N-Channel Depletion-Mode MOSFET high voltage

Abstract: pc 817 A - mosfet gate drive mosfet to-92 n-channel 20 volt
Contextual Info: S u p e r t e x inc. LND150 /jrfÌN N-Channel Depletion-Mode vHg/ MOSFET Ordering Information _ Order Num ber / Package BVdsx/ ^DS ON I dss BV dox (max) (min) TO-92 TO-243AA* Die 500V 1.0KQ 1.0mA LND150N3 LND150N8 LND150ND * Sam e a s SOT-89. Product shipped on 2000 piece carrie r tape reels.

marking code 11G1

Contextual Info: b b S B ' m 0DE4750 462 « A P X N AMER PHILIPS/DISCRETE BF996S b7E » y v . SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended for UHF applications in television tuners.

BF980

Abstract: BF980A SOT-103 transistor SOT103 mosfet
Contextual Info: Tlioaab C0b7547 ITS M P H I N BF980A SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected. Intended fo r UHF applications, such as UHF television tuners, w ith 12 V supply voltage and professional

marking code 11G1

Contextual Info: • bbSB'iai 0024733 3T3 « A P X N AMER PHILIPS/DISCRETE BF990A b7E » SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected, intended for UHF applications, such as UHF television tuners with 12 V

BF981

Abstract: bf981 TRANSISTOR sot103
Contextual Info: 7110fl2b G0b7S53 MTT « P H I N BF981 J v _ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected, intended fo r VHF applications, such as VHF television tuners, FM tuners and professional com m uni­

depletion MOSFET

Abstract: BSD22 n mosfet depletion transistor MARKING CODE RJ
Contextual Info: bb53^31 □QSSMM'Î ^05 HIAPX • N AUER PHILIPS/DISCRETE BSD22 b?E D J MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR S ym m etrical insulated-gate silicon MOS fre ld -e ffe ct tran sisto r o f the n-channel d e p le tio n m ode type. The tran sisto r is sealed in a SO T-143 envelope and features a lo w ON-resistance and lo w capacitances.

BF994S

Abstract: L7E transistor n Power mosfet depletion free transistor bs 200
Contextual Info: bbS3T31 CmE3Li2S MST APX BF994S N AP1ER P H I L I P S / D I S C R E T E b?E I SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 m icrom iniature envelope w ith source and substrate interconnected and intended fo r VHF applications in television tuners.

BF982

Abstract: Transistor BF982 335kW Marking G2 SOT103
Contextual Info: 711Dfl2fcj GGtTSbl S7S M P H I N BF982 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected, intended for V H F applications, such as V H F television tuners, F M tuners, with 12 V supply voltage.