DEPLETION TYPE MOSFET Search Results

BSD20

Abstract: 9010J BSD22 gbs transistors V1525 depletion MOSFET n mosfet depletion
Contextual Info: _ I l . bb53T31 0012=134 3 BSD20 ObE D BSD22 N AMER PHILIPS/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTORS T - S S '- IS ' Symmetrical insulated-gate silicon MOS field-effect transistors of the N-channel depletion mode type.

Contextual Info: BSD12 J \ _ MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.

BSD12

Abstract: depletion MOSFET Mosfet n-channel switching transistor N-Channel depletion mos gbs transistor free transistor
Contextual Info: BSD12 _ MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor o f the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.

Contextual Info: DMCD N-Channel _ Depletion-Mode MOSFET in c o r p o r a te d DEVICE TYPE PACKAGE Single TO-72 TO-206AF • SD2100 Single Chip • Available as DMCD1CHP TYPICAL CHARACTERISTICS Depletion Mode - Drain Current & On-Reslstance vs. Gate-Source Cutoff Voltage

Depletion MOSFET

Abstract: switching transistor 331 b771D n channel depletion MOSFET N-Channel Depletion-Mode MOSFET BSD12 free transistor gbs transistor convertor 5 V to -5 V Depletion
Contextual Info: 711Gä2t> Q0b770ö 217 • P H I N BSD12 MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon M OS field-effect transistor o f the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.

Contextual Info: bbS3=i31 002544=1 =105 * A P X BSD22 b7E D N AMER PHI LIP S/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type. The transistor is sealed in a SOT-143 envelope and features a low ON-resistance and low capacitances.

BSD10

Abstract: depletion MOSFET n channel depletion MOSFET BSD12 gbs transistors depletion mode power mosfet 7z87626 k 3525 MOSFET convertor 5 V to -5 V
Contextual Info: • . N AMER PHILIPS/DISCRETE - ft — — — — bbSB'iai Q01724'5 S • E5E D BSD10 BSD12 MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTORS Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.

transistor BD 430

Abstract: Depletion
Contextual Info: _ II _ bbS3T31 O O I S ^ H 3 BSD20 ObE D BSD22 N AMER PHILIPS/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTORS T - 3 S '- 2. S' Symmetrical insulated-gate silicon MOS field-effect transistors of the N-channel depletion mode type. The transistor is sealed in a SOT-143 envelope and features a low ON-resistance and low capacitances.

Contextual Info: — .1— N AUER PHILIPS/DISCRETE ^[,53^31 0D17S4'5 S • BSD10 BSD12 ESE D T - Z S -Z S - MOSFET N-CHANNEL DEPLETION SW ITCHING TRAN SISTO RS Symmetrical insulated-gate silicon M O S field-effect transistor of the N-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.

N-Channel Depletion-Mode MOSFET

Abstract: VDDV24
Contextual Info: VDDV24 J7ESS& N-Channel Depletion-Mode MOSFET_ TYPE PACKAGE DEVICE Single TO-92 TO-226AA • ND2406L, ND2410L Single Chip • Available as VDDV1CHP, VDDV2CHP TYPICAL CHARACTERISTICS On-Resistance & Drain Current vs. Gate-Source Cutoff Voltage

Contextual Info: BlS S & VDDQ20 N-Channel _ Depletion-Mode MOSFET TYPE PACKAGE DEVICE Single TO-92 TO-226AA • ND2012L, ND2020L Single Chip • Available as VDDQ1CHP, VDDQ2CHP TYPICAL CHARACTERISTICS On-Reslstance & Drain Current vs. Gate-Source Cutoff Voltage

Contextual Info: BF965 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in plastic X-package with source and substrate interconnected, intended for VHF applications, such as VHF television tuners and professional communication

dual-gate

Abstract: BF966S
Contextual Info: Philips Semiconductors Short-form product specification Silicon N-channel dual-gate MOS-FET BF966S APPLICATIONS • UHF applications in television tuners and professional communications equipment. DESCRIPTION Depletion type field-eftect transistor in a plastic X-package

dual-gate

Contextual Info: Philips Semiconductors Short-form product specification Silicon N-channel dual-gate MOS-FET BF966S APPLICATIONS • UHF applications in television tuners and professional communications equipment. DESCRIPTION Depletion type field-effect transistor in a plastic X-package

3N200

Contextual Info: <zNe.w <Se,mL- Conductor ZPioducti, fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 201 376-2922 (212)227-6005 FAX: (201) 376-8960 DUAL-GATE MOSFET N-CHANNEL — DEPLETION ^ 3N200 TYPE NUMBER u BVOSS 20 PORWAR D TRANSSOMJCTANCE ^PO DERATE

n mosfet depletion 600V

Contextual Info: SIPMOS N Channel MOSFET BSP 135 Preliminary Data • SIPMOS - depletion mode • Drain-source voltage • Continuous drain current Vfes = 600V I B = 0.100A • Drain-source on-resistance • Total power dissipation flDS on = 60Q P0 = 1,5W ( Type Marking Ordering code for

BF960

Abstract: transistor BF960 BF-960 dual-gate
Contextual Info: Short-form product specification Philips Semiconductors Silicon N-channel dual-gate MOS-FET BF960 APPLICATIONS • UHF applications in television tuners and professional communications equipment. DESCRIPTION Depletion type field-effect transistor in a plastic X-package

HMC591LP5

Abstract: HMC980LP4E EVAL01-HMC980LP4E HMC637LP5 TP10 marking r3r4 HMC637LP5E eqn 1325 hmc870Lc5 HMC487LP5E
Contextual Info: HMC980LP4E v01.0911 Typical Applications Features • Automatic Gate voltage adjustment No Calibration required Military & Space • Supply Voltage (5V to 16.5V) • Test Instrumentation • • Fiber Optic Modulator Driver Biasing Bias both Enhancement or Depletion type

TRANSISTOR mosfet BF998

Abstract: BF998 depletion BF998 UCB343 dual gate mosfet
Contextual Info: Philips Components D atasheet status Preliminary specification date of issue October 1990 FEATURES • Short channel transistor with high ratio lYfel/Gis. • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor

NTE221

Abstract: depletion MOSFET riss
Contextual Info: NTE221 MOSFET Dual Gate, N–Channel for VHF TV Receivers Applications Description: The NTE221 is an N–channel depletion type, dual–insulated gate, field–effect transistor that utilizes MOS construction. This device has characteristics which makes it highly desirable for use in RF–amplifier applications.

BF960

Abstract: transistor BF960
Contextual Info: BF960 _ / SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected, intended fo r use in u.h.f. applications in television tuners and professional communication equipment.

Contextual Info: BF966S _ J v _ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected, intended fo r u.h.f. applications in television tuners and professional communication equipment.

Contextual Info: HMC980LP4E v00.0611 Typical Applications Features • Automatic Gate voltage adjustment No Calibration required Military & Space • Supply Voltage (5V to 16.5V) • Test Instrumentation • • Fiber Optic Modulator Driver Biasing Bias both Enhancement or Depletion type

BF981

Abstract: Dual-Gate* bf981 BF981 philips bf981 TRANSISTOR dual-gate
Contextual Info: Philips Semiconductors Short-form product specification Silicon N-channel dual-gate MOS-FET BF981 APPLICATIONS • VHF applications such as VHF television tuners, FM tuners and professional communications equipment. H DESCRIPTION Depletion type field-effect transistor in a plastic X-package