DEVICE MARKING 04L Search Results

Contextual Info: DT1240-04LP ADVANCED ADVANCE INFORMATION INFORMATIO 4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY Features & Applications Mechanical Data •                 Clamping Voltage: 9V at 10A 100ns, TLP 9.4V at 5.5A 8 s/20μs

Contextual Info: DT1140-04LP ADVANCE INFORMATIO 4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY Features Mechanical Data • Clamping Voltage:9V at 10A 100ns TLP; 9V at 6A 8 s/20μs   IEC 61000-4-2 ESD : Air – +20/-18kV, Contact – +20/-16kV   IEC 61000-4-5 (Lightning): ±6A (8/20µs)

Contextual Info: BAS40-04LT1 Preferred Device Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount

marking CG

Contextual Info: BAS70-04LT1 Preferred Device Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable

diode MARKING CODE CG

Abstract: diode cg sot-23 318 MARKING MARKING CG sot23 Diodes MARKING CG SOT-23 power sot-23 Marking cg 04LT1 CG SOT23
Contextual Info: BAS70-04LT1 Preferred Device Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount

marking 04L sot23

Abstract: sot23 04l BAS40-04L BAS40-04LT1 04L sot23 marking 04L to236AB marking cb bas40
Contextual Info: BAS40-04LT1 Preferred Device Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount

BAS70-04LT1

Abstract: BAS70-04LT1G
Contextual Info: BAS70-04LT1 Preferred Device Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount

Contextual Info: BAS70-04LT1 Preferred Device Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount

BAS70-04LT1

Abstract: BAS70-04LT1G 318 MARKING
Contextual Info: BAS70-04LT1 Preferred Device Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount

04LT1

Abstract: BAS70 BAS70-04LT1
Contextual Info: BAS70-04LT1 Preferred Device Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable

BAS40-04L

Abstract: BAS40-04LT1 DIODE marking 04l T1G PACKAGE 04L sot23
Contextual Info: BAS40-04LT1 Preferred Device Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount

Contextual Info: BAS70-04LT1G Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where

Contextual Info: BAS70-04LT1G, SBAS70-04LT1G Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount

BAS40-04LT1G

Abstract: BAS40 Schottky Barrier Diodes
Contextual Info: BAS40-04LT1G Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where

SBAS40-04LT1G

Abstract: 04LT
Contextual Info: BAS40-04LT1G, SBAS40-04LT1G Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount

diode cg sot-23

Contextual Info: BAS70-04LT1 Preferred Device Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable

DIODE marking 04l

Abstract: SUM110P04-04L c4038
Contextual Info: SUM110P04-04L Vishay Siliconix P-Channel 40-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)d 0.0042 at VGS = - 10 V - 110 0.0062 at VGS = - 4.5 V - 110 VDS (V) - 40 • TrenchFET Power MOSFET • New Package with Low Thermal Resistance

SUM110P04-04L

Abstract: VOLTAGE-1000
Contextual Info: SUM110P04-04L Vishay Siliconix P-Channel 40-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)d 0.0042 at VGS = - 10 V - 110 0.0062 at VGS = - 4.5 V - 110 VDS (V) - 40 • TrenchFET Power MOSFET • New Package with Low Thermal Resistance

SUM110N06-04L

Contextual Info: SUM110N06-04L Vishay Siliconix N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (Ω) 0.0035 at VGS = 10 V 0.005 at VGS = 4.5 V • TrenchFET Power MOSFETS • New Low Thermal Resistance Package ID (A) 110 Available RoHS*

SUM110N06-04L

Abstract: s300-50
Contextual Info: SUM110N06-04L Vishay Siliconix N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (Ω) 0.0035 at VGS = 10 V 0.005 at VGS = 4.5 V • TrenchFET Power MOSFETS • New Low Thermal Resistance Package ID (A) 110 Available RoHS*

72437

Contextual Info: SUM110P04-04L Vishay Siliconix P-Channel 40-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)d 0.0042 at VGS = - 10 V - 110 0.0062 at VGS = - 4.5 V - 110 VDS (V) - 40 • TrenchFET Power MOSFET • New Package with Low Thermal Resistance

SUM110N06-04L

Contextual Info: SUM110N06-04L Vishay Siliconix New Product N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (Ω) 0.0035 at VGS = 10 V 0.005 at VGS = 4.5 V ID (A) • TrenchFET Power MOSFETS • New Low Thermal Resistance Package Available

SQM110P04

Contextual Info: SQM110P04-04L Vishay Siliconix Automotive P-Channel - 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 40 RDS(on) (Ω) at VGS = 10 V 0.0038 RDS(on) (Ω) at VGS = 4.5 V 0.0060 ID (A) • TrenchFET Power MOSFET

Contextual Info: SQM120N06-04L Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 60 RDS(on) () at VGS = 10 V 0.0035 RDS(on) () at VGS = 4.5 V 0.0050 ID (A) • TrenchFET Power MOSFET