DEVICE MARKING T7 Search Results

DEVICE MARKING T7 Result Highlights (5)

Part	Manufacturer	Description
TPD4164F	Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31
TPD4207F	Toshiba Electronic Devices & Storage Corporation	Intelligent power device 600V (High voltage PWM DC brushless motor driver)
TPD4204F	Toshiba Electronic Devices & Storage Corporation	Intelligent power device 600V (High voltage PWM DC brushless motor driver)
TPD4164K	Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30
TPD4163K	Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30

DEVICE MARKING T7 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BSR15 BSR16 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BSR15 = T7 BSR16 = T8 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm	Original	PDF	OT-23 BSR15 BSR16 C-120
Untitled Abstract: No abstract text available Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BSR15 BSR16 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BSR15 = T7 BSR16 = T8 Pin configuration 1 = BASE 2 = EMITTER	Original	PDF	OT-23 BSR15 BSR16 C-120 BAV70REV 071105E
marking t8 sot-23 Abstract: T8 SOT23 BSR15 BSR16 Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BSR15 BSR16 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BSR15 = T7 BSR16 = T8 Pin configuration 1 = BASE 2 = EMITTER	Original	PDF	OT-23 BSR15 BSR16 C-120 BAV70REV 071105E marking t8 sot-23 T8 SOT23 BSR15 BSR16
BSR15 Abstract: BSR16 Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BSR15 BSR16 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BSR15 = T7 BSR16 = T8 PACKAGE OUTLINE DETAILS	Original	PDF	OT-23 BSR15 BSR16 C-120 BSR15 BSR16
scr control circuit for welding Abstract: POW-R-BRIK SCR 131-6 SCR 2000 powerex R9G0 2100 scr welding 2200300 scr 209 3000 watt inverter SCR RECTIFIER Text: POW-R-BRIK Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Phase Control Modules 345-800 Amperes/400-3000 Volts OUTLINE DRAWING MARKING: DEVICE AND DIRECTION ACCORDING TO CIRCUIT CONFIGURATION CHART L TYP. 4 PLACES C	Original	PDF	Amperes/400-3000 9003DH 0803DH 1003DH 1203DH 08XX00 0903DH scr control circuit for welding POW-R-BRIK SCR 131-6 SCR 2000 powerex R9G0 2100 scr welding 2200300 scr 209 3000 watt inverter SCR RECTIFIER
Untitled Abstract: No abstract text available Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BSR15 BSR16 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking	Original	PDF	OT-23 BSR15 BSR16 C-120
Untitled Abstract: No abstract text available Text: 512Mb: x16 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package – 121-ball FBGA 6.5mm x 8mm	Original	PDF	512Mb: MT42L32M16D1 09005aef8467caf2
Untitled Abstract: No abstract text available Text: Preliminary‡ 512Mb Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L32M32D2 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks – 2 x 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package	Original	PDF	512Mb MT42L32M16D1, MT42L32M32D2 121-ball 134-ball 09005aef84d56533
Untitled Abstract: No abstract text available Text: Preliminary‡ 512Mb Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L32M32D2 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks – 2 x 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package	Original	PDF	512Mb MT42L32M16D1, MT42L32M32D2 121-ball 134-ball 09005aef84d56533
C167-LM Abstract: SAB-C167-LM C166 C167 SAF-C167-LM CC31IR Text: Microcomputer Components Technical Support Group Munich HL MCB AT 1 Errata Sheet December 18, 1995 / Release 1.2 Device : Stepping Code / Marking : SAB-C167-LM SAF-C167-LM AD This Errata Sheet describes the functional problems and deviations from the DC/AC specification known in this step. Problem classification and numbering is	Original	PDF	SAB-C167-LM SAF-C167-LM C167-LM 144-pin P-MQFP-144-1) C167-LM, SAB-C167-LM C166 C167 SAF-C167-LM CC31IR
marking AF Abstract: C166 C167 C167CR SAH-C167CW-L16M c167cw-l16 Text: Microcomputer Components Technical Support Group Munich HL MCB AT 1 Errata Sheet December 18, 1995 / Release 1.0 Device : Stepping Code / Marking : SAH-C167CW-L16M AE, AF This errata sheet describes the functional problems and deviations from the DC/AC specification known in this step. For backward reference, a table which	Original	PDF	SAH-C167CW-L16M C167CW-L16M 144-pin P-MQFP-144-1) C167CW-L16M, marking AF C166 C167 C167CR SAH-C167CW-L16M c167cw-l16
MT42L16M32 Abstract: MT42L16M32D1 MT42L16M32D MT42L32M16D1 MT42L32M16D PS 229 LPDDR2 PoP LPDDR2 DRAM LPDDR2-1066 Micron LPDDR2 Text: 512Mb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L16M32D1 Features Options Marking • VDD2: 1.2V • Configuration – 4 Meg x 32 x 4 banks – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package	Original	PDF	512Mb: MT42L32M16D1, MT42L16M32D1 09005aef8467caf2 MT42L16M32 MT42L16M32D MT42L32M16D1 MT42L32M16D PS 229 LPDDR2 PoP LPDDR2 DRAM LPDDR2-1066 Micron LPDDR2
MT42L16M32D1 Abstract: 7600B Dynamic Memory Refresh Controller LPDDR2-1066 121ball Text: 512Mb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L16M32D1 Features Options Marking • VDD2: 1.2V • Configuration – 4 Meg x 32 x 4 banks – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package	Original	PDF	512Mb: MT42L32M16D1, MT42L16M32D1 09005aef8467caf2 7600B Dynamic Memory Refresh Controller LPDDR2-1066 121ball
PAN1322-SPP Abstract: No abstract text available Text: August 2013 ENW89841A3KF Bluetooth QD ID:B021246 End Product Listing FCC ID: T7VEBMU IC ID: 216QEBMU PAN1322-SPP Intel’s BlueMoonUniversal Platform Wireless Modules User’s Manual Hardware Description Revision 1.3 Edition 2013-08-14 Published by Panasonic Industrial Devices Europe GmbH	Original	PDF	ENW89841A3KF B021246 216QEBMU PAN1322-SPP D-21337 PAN1322 PAN1322-SPP

Untitled Abstract: No abstract text available Text: January 2011 ENW89810K5CF Bluetooth QD ID:B014433 End Product Listing FCC ID: T7VEBMU IC ID: 216QEBMU PAN1311-SPP In f i n e o n’s BlueMoonUniversal Platform Wireless Modules User’s Manual Hardware Description Revision 1.1 November 2011 ENW89811xxxF	Original	PDF	ENW89810K5CF B014433 216QEBMU PAN1311-SPP ENW89811xxxF PAN1321-SPP D-21337
Q-SPT7H0327620C5GL Abstract: SB203 4329A SSPT7 DC100V marking code for resonators SEIKO method of the lot number Text: Specifications No. Messrs. （ first ・ revised ） Delivery Specifications Product No ： Quartz Crystal Unit SSP-T7-F Item code ： Q-SPT7H0327620C5GL Product form ： 32.768kHz ± 20 x 10-6 / 12.5 pF The number of copies ： 1copy Date of Registrantion	Original	PDF	Q-SPT7H0327620C5GL 768kHz Q-SPT7H0327620C5GL SB203 4329A SSPT7 DC100V marking code for resonators SEIKO method of the lot number
SSP-T7-F Abstract: Q-SPT7 Q-SPT7H032762070BJ SSPT7 DC100V MATERIAL INSPECTION QUALITY QUANTITY medical ultrasonic crystal SSPT7F outgoing inspection SSP-T7 Text: Specifications No. Messrs. （ first ・ revised ） Delivery Specifications Product No ： Quartz Crystal Unit SSP-T7-F Item code ： Q-SPT7H032762070BJ Product form ： 32.768kHz ± 20 x 10-6 / 7.0 pF The number of copies ： 1copy Date of Registrantion	Original	PDF	Q-SPT7H032762070BJ 768kHz SSP-T7-F Q-SPT7 Q-SPT7H032762070BJ SSPT7 DC100V MATERIAL INSPECTION QUALITY QUANTITY medical ultrasonic crystal SSPT7F outgoing inspection SSP-T7
T73127 Abstract: 4 MHz Oscillator Text: Preliminary T73127 3.3V VCXO with Output Enable Applications • Crystal-driven clock source General Description The T73127 is a single-chip, low-jitter Voltage-Controlled-Crystal-Oscillator. The device accepts a 19 -30 MHz, 20 pF crystal input, and produces a low jitter output at the same frequency. The output is enabled	Original	PDF	T73127 T73127 100ppm 30ppm 50ppm T73127/D T73127/DW 4 MHz Oscillator
T73LVP22 Abstract: T73LVP22S1 T73LVP22S1X Text: Advanced Information T73LVP22 Dual TTL to Differential LVPECL Translator Applications • Clock and Data Translation Ideal for use where space is a premium General Description The TLSI T73LVP22 is a general purpose Dual TTL CMOS to differential LVPECL translator operating	Original	PDF	T73LVP22 T73LVP22 350pS 750mV MDST-0014-00 T73LVP22S1 T73LVP22S1X T73P22S1 T73LVP22S1 T73LVP22S1X
T73LVP12 Abstract: No abstract text available Text: Preliminary Information T73LVP12 3.3V LVTTL/LVCMOS-to-Differential LVPECL Translator with Output Enable Applications • LVPECL clock source General Description The TLSI T73LVP12 is a general-purpose LVTTL/LVCMOS-to-differential LVPECL translator operating	Original	PDF	T73LVP12 T73LVP12 350pS T73LVP12-S08 T73LVP12-S08-TNR T73LVP12-SOT T73LVP12-SOT-TNR T73LVP12-DIE
Untitled Abstract: No abstract text available Text: SIEMENS BFR 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • f j = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking	OCR Scan	PDF	900MHz Q62702-F1492 OT-323 aS35bD5
BFR90 Abstract: No abstract text available Text: SIEMENS NPN Silicon RF Transistor BFR 90 • For broadband amplifiers up to 2 GHz at collector currents from 1 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFR 90 BFR 90 Q62702-F560 Pin Configuration	OCR Scan	PDF	Q62702-F560 flB35b05 BFR90
Untitled Abstract: No abstract text available Text: SIEMENS BFP183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F= 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code	OCR Scan	PDF	BFP183W Q62702-F1503 OT-343 fiE35bQ5 900MHz c15mA fl535b05
d2 SMD TRANSISTORs pnp npn Abstract: BCW600 2n2222a smd smd transistors B5R17 hS7 marking darlington bc smd smd marking BJ Text: SMD Transistors SOT-23 Case 350mW Proelectron Series— Confd Q <' H MARKING CODE SIMILAR LEADED DEVICE — 3K BC5586 — 3L Cofc PF MAX (MHz) TYP NF (dB) MAX tofF (mA) 0.65 100 4.5 150 10 0.65 100 4.5 150 10 2.0 0.65 100 4.5 150 4.0 — 50 2.0 0.65 100	OCR Scan	PDF	OT-23 350mW bc858b bc558b bc858c bc558c bc859 bc559 bc859a bc559a d2 SMD TRANSISTORs pnp npn BCW600 2n2222a smd smd transistors B5R17 hS7 marking darlington bc smd smd marking BJ

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DEVICE MARKING T7 Search Results

DEVICE MARKING T7 Result Highlights (5)

DEVICE MARKING T7 Datasheets Context Search

Untitled

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marking t8 sot-23

BSR15

scr control circuit for welding

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C167-LM

marking AF

MT42L16M32

MT42L16M32D1

PAN1322-SPP

Untitled

Q-SPT7H0327620C5GL

SSP-T7-F

T73127

T73LVP22

T73LVP12

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BFR90

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d2 SMD TRANSISTORs pnp npn