DEVICE MARKING ZVN Search Results

ZVN4106F

Abstract: MARKING MZ ZVN4106FTA Marking MZ ZVN4106F
Contextual Info: A Product Line of Diodes Incorporated ZVN4106F 60V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOSFET IN SOT23 Features Mechanical Data • • • • • • • • BVDSS > 60V RDS on ≤ 2.5Ω @ VGS = 10V Maximum continuous drain current ID = 200mA Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

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Abstract: ZVN4310
Contextual Info: A Product Line of Diodes Incorporated Green ZVN4310G 100V N-CHANNEL ENHANCEMENT MODE VERTICAL MOSFET IN SOT223 Features and Benefits Mechanical Data • • • • V BR DSS > 100V RDS(on) ≤ 0.54Ω @ VGS = 10V Maximum continuous drain current ID = 1.67A

Contextual Info: A Product Line of Diodes Incorporated Green ZVN4310G 100V N-CHANNEL ENHANCEMENT MODE VERTICAL MOSFET IN SOT223 Features and Benefits Mechanical Data • • • • V BR DSS > 100V RDS(on) ≤ 0.54Ω @ VGS = 10V Maximum continuous drain current ID = 1.67A

ZVN4306A

Abstract: e-line 113 Diodes Incorporated equivalent part
Contextual Info: A Product Line of Diodes Incorporated Green ZVN4306A 60V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET IN E-LINE Product Summary Features and Benefits 330mΩ @ VGS = 10V 1.4A • • • • 450mΩ @ VGS = 5V 1.2A • V BR DSS Max RDS(on) Max ID @ TA = 25°C

Contextual Info: A Product Line of Diodes Incorporated Green ZVN4306A 60V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET IN E-LINE Features and Benefits Product Summary 330mΩ @ VGS = 10V 1.4A • • • • 450mΩ @ VGS = 5V 1.2A • V BR DSS Max RDS(on) Max ID @ TA = 25°C

Contextual Info: A Product Line of Diodes Incorporated ZVN3310F 100V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary • • • • 100 10 VDS V RDS(ON) (Ω) Description and Applications This MOSFET utilises a structure that combines low input capacitance with relatively low on-resistance and has an intrinsically

ZVN3310F

Abstract: mf mosfet ZVN3310FTA ZVN3310 ZVP3310F
Contextual Info: A Product Line of Diodes Incorporated ZVN3310F 100V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits • • • • 100 10 VDS V RDS(ON) (Ω) Description and Applications

SOT23-6 MARKING 310

Abstract: ZVN4525G p-channel 250V power mosfet ZVN4525GTA ZVN4525GTC ZVP4525G DSA0037391
Contextual Info: ZVN4525G 250V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY DESCRIPTION This 250V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced

marking n52

Abstract: marking N52 mosfet ZVN4525ZTA MOSFET 4420 sot223 device Marking ZVN4525Z ZVP4525G DSA0037393 device marking N52
Contextual Info: ZVN4525Z 250V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY DESCRIPTION This 250V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced

marking n52

Abstract: marking N52 mosfet ZVN4525E6TA DSA0037389 ZVP4525E6 device marking N52 marking QG SOT23-6 MARKING TR SOT23-6 P MOSFET N52 marking sot223 device Marking
Contextual Info: ZVN4525E6 250V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY DESCRIPTION This 250V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced

DEVICE MARKING ZVN

Abstract: BSS138S 2N7001
Contextual Info: ZETEX SEM ICO NDUCTORS IbE D • ^70576 0Q0bflS4 3 ■ ZETB MOSFETS SPECÌFiCATÌONS — —P N-CHANIMEL SM ALL SIGNAL M OSFETS Part number ZVN0545A* ZVN0545B ZVN0540A* ZVN0540B ZVN2535A ZVN2535B ZVN0535A* ZVN 0124A ZVN0124B ZVN 2120A ZVN2120B BS107P BS107PT

Contextual Info: DATE: 13th January, 2015 INFORMATIONAL PCN #: 2166 (REV 01) PCN Title: Addition of Date Code Information to Part Marking Dear Customer: This is an announcement of change(s) to products that are currently being

TK75020

Abstract: toshiba laptop schematic diagram tokoam variable coils HIGH POWER MOSFET TOSHIBA D22 diode marking code 6pin sot-89 marking d9 itt 2907A laptop CCFL inverter SCHEMATIC laptop inverter ccfl tk11650
Contextual Info: Toko IC Products Selection Guides: • • • • • • • • • • Linear Regulators DC-DC Converters Switching Power Supply ICs Temperature Sensors Solid State Switches Variable Capacitance Diodes Application Notes Resistor Calculation Tool Product Selection Tree

Contextual Info: INA3 INA3 26 INA326 INA327 27 SBOS222D – NOVEMBER 2001 – REVISED NOVEMBER 2004 Precision, Rail-to-Rail I/O INSTRUMENTATION AMPLIFIER FEATURES DESCRIPTION ● PRECISION LOW OFFSET: 100µV max LOW OFFSET DRIFT: 0.4µV/°C (max) EXCELLENT LONG-TERM STABILITY

4422 mosfet

Abstract: p-channel mosfet with diode sot89 MARKING TR SOT23-6 P MOSFET ZVN4525G ZVP4525G ZVP4525GTA ZVP4525GTC DSA0037419
Contextual Info: ZVP4525G 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY DESCRIPTION This 250V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced

marking p52 mosfet

Abstract: p52 sot89 p-channel 250V power mosfet c 103 mosfet MARKING TR SOT23-6 P MOSFET ZVN4525Z ZVP4525Z ZVP4525ZTA ZVP4525ZTC DSA0037423
Contextual Info: ZVP4525Z 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced

MARKING TR SOT23-6 P MOSFET

Abstract: ZVN4525G ZVP4525G ZVP4525GTA ZVP4525GTC
Contextual Info: ZVP4525G 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=-250V; RDS(ON)=14V; ID=-265mA DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced

Contextual Info: bq2011 Gas Gauge IC for High Discharge Rates Features General Description ➤ Conservative and repeatable measurement of available charge in rechargeable batteries The bq2011 Gas Gauge IC is intended for battery-pack installation to maintain an accurate record of available

F4041

Abstract: 28F008SA LRS1302 LRS13023 CV674 Sharp IIS BAX20
Contextual Info: PRODUCT SPECIFICATIONS Integrated Circuits Group LRS1302 Stacked Chip 8M Flash and 1M SRAM Model No.: LRS13023 Spec No.: EL116039 Issue Date: June 11, 1999 SHARP LRS13023 l Handle this document carefully for it contains material protected by international

Contextual Info: bq2013H Gas Gauge IC for PowerAssist Applications Features General Description ➤ Accurate measurement of available charge in rechargeable batteries The bq2013H Gas Gauge IC is intended for battery-pack installation to maintain an accurate record of a battery’s available charge. The IC monitors a voltage drop across a sense resistor connected in series between the

Contextual Info: bq2012 Gas Gauge IC With Slow-Charge Control Features General Description means of controlling charge based on the battery's charge state. ➤ Conservative and repeatable measurement of available charge in rechargeable batteries The bq2012 Gas Gauge IC is intended for battery-pack or in-system

Contextual Info: INA3 INA3 26 INA326 INA327 27 SBOS222D – NOVEMBER 2001 – REVISED NOVEMBER 2004 Precision, Rail-to-Rail I/O INSTRUMENTATION AMPLIFIER FEATURES DESCRIPTION ● PRECISION LOW OFFSET: 100µV max LOW OFFSET DRIFT: 0.4µV/°C (max) EXCELLENT LONG-TERM STABILITY

Contextual Info: ZVP4525Z 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=-250V; RDS(ON)=14 ; ID=-205mA DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced

p52 sot89

Abstract: marking p52 SOT23-6 design ideas TS16949 ZVN4525Z ZVP4525Z ZVP4525ZTA ZVP4525ZTC complementary MOSFET sot89 p-channel mosfet sot89 5V
Contextual Info: ZVP4525Z 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=-250V; RDS(ON)=14 ; ID=-205mA DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced