Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DF MARKING CODE SMD TRANSISTOR Search Results

    DF MARKING CODE SMD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    DF MARKING CODE SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    varistor svc 561 14

    Abstract: Z5U 103M 1KV samwha capacitor part numbers SVC 561 14 varistor 472m varistor svc 471 14 SVC 561 10 Varistor sck 055 varistor 332m varistor SVC 561
    Text: Contents_ Company History 2 Multi Layer Ceramic Capacitors SMD Type 5 SMD Type-High Voltage 13 Automotive Application 26 Radial & Axial 38 Chip Beads & Inductors Chip Ferrite Beads 46 Chip Ferrite Beads Arrays 65 Chip Ferrite Inductors 68 Chip Power Inductors


    Original     		PDF revoluti90 varistor svc 561 14 Z5U 103M 1KV samwha capacitor part numbers SVC 561 14 varistor 472m varistor svc 471 14 SVC 561 10 Varistor sck 055 varistor 332m varistor SVC 561

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB360ENEA 80 V, N-channel Trench MOSFET 16 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMXB360ENEA DFN1010D-3 OT1215) AEC-Q101

    TRANSISTOR SMD MARKING CODE 207

    Abstract: X1N60S5 X1N60 DF marking code smd transistor 207a N60S5
    Text: SIEMENS SPPX1N60S5 SPBX1N6QS5 Target data sheet Cool MOS Power Transistor • Worldwide best ffos on in TO 220 • N-Channel • Enhancement mode • Ultra low gate charge • Avalanche rated • éviàt rated • 150°C operating temperature Type SPPX1N60S5


    OCR Scan     		PDF SPPX1N60S5 SPBX1N60S5 X1N60S5 P-T0220-3-1 P-T0263-3-2 N60S5: TRANSISTOR SMD MARKING CODE 207 X1N60S5 X1N60 DF marking code smd transistor 207a N60S5

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SPNX6N60S5 Target data sheet Cool MOS Power Transistor • Worldwide best /?DS on ¡n SOT 223 • N-Channel • Enhancement mode • Ultra low gate charge • Avalanche rated • Extreme dv/dt rated • 150°C operating temperature Type ^DS SPNX6N60S5 600 V


    OCR Scan     		PDF SPNX6N60S5 SPNX6N60S5 X6N60S5 P-SOT223-4-1

    BYT 56 diode

    Abstract: smd transistor marking TQ smd diode JD BYt 32
    Text: SIEM EN S SPPX4N60S5 SPBX4N6QS5 Target data sheet Coot MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge VPT05154 • Avalanche rated • dv/df rated • 150°C operating temperature Type SPPX4N60S5 ^DS 600 V b 3.2 A %S on


    OCR Scan     		PDF SPPX4N60S5 VPT05154 SPBX4N60S5 X4N60S5 P-T0220-3-1 P-T0263-3-2 SPPX4N60S5: BYT 56 diode smd transistor marking TQ smd diode JD BYt 32

    TRANSISTOR SMD MARKING CODE ag

    Abstract: smd TRANSISTOR code AJ transistor marking smd 7c smd marking wds transistor smd marking AJ 7C SMD TRANSISTOR smd transistor marking AJ TRANSISTOR SMD MARKING CODE AJ
    Text: SIEMENS SPNX2N60S5 Target data sheet Cool MOS Power Transistor • Worldwide best Ffos on in SOT 223 • N-Channel • Enhancement mode • Ultra low gate charge • Avalanche rated • d v/d t rated 1 2 ,4 3 • 150°C operating temperature G D S Type


    OCR Scan     		PDF SPNX2N60S5 SPNX2N60S5 X2N60S5 P-SOT223-4-1 TRANSISTOR SMD MARKING CODE ag smd TRANSISTOR code AJ transistor marking smd 7c smd marking wds transistor smd marking AJ 7C SMD TRANSISTOR smd transistor marking AJ TRANSISTOR SMD MARKING CODE AJ

    VPT09051

    Abstract: transistor ag qs VPT09050
    Text: SIEMENS SPUX2N60S5 SPDX2N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge VPT09051 VPT09050 • Avalanche rated • dv/df rated • 150°C operating temperature Type SPUX2N60S5 Vds 600 V to 4.5 A


    OCR Scan     		PDF SPUX2N60S5 SPDX2N60S5 VPT09051 VPT09050 X2N60S5 P-T0251-3-1 P-T0252 VPT09051 transistor ag qs VPT09050

    SOT89 MARKING 2E

    Abstract: SOT89 MARKING 2d marking codes transistors sot-223 SOT-23 MARKING T36 bt1 marking DA SOT-89 df SOT-223 DA SOT-89 NPN MARKING 2D SOT-89 PMBT5551
    Text: HIGH VOLTAGE SMI TRANSISTORS DESCRIPTION • Philips Components produces a variety o f chip geometries in order to offer high voltage transistors w ith a broad range of current handling capabilities. The result is a device which not only fulfills high voltage application


    OCR Scan     		PDF OT-89 OT-223 BF821 BF822 BF823 BSP16 BSP20 BSR19 BSR19A BSR20 SOT89 MARKING 2E SOT89 MARKING 2d marking codes transistors sot-223 SOT-23 MARKING T36 bt1 marking DA SOT-89 df SOT-223 DA SOT-89 NPN MARKING 2D SOT-89 PMBT5551

    VPT09051

    Abstract: VPT09050 SPD01N50M2 SPU01N50M2 DIODE MARKING CODE 623
    Text: In fin eon SPU01N50M2 SPD01N50M2 Target data sheet technologies Cool MOS Power-Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/df rated • Optimized capacitances • Improved noise immunity


    OCR Scan     		PDF SPUx7N60S5/SPDx7N60S5 SPU01N50M2 SPD01N50M2 VPT09050 VPT09051 SPU01N50M2 P-T0251 01N50M2 Q67040-S4324 VPT09051 VPT09050 SPD01N50M2 DIODE MARKING CODE 623

    AG qd transistor SMD

    Abstract: transistor ag qs
    Text: SIEMENS SPUX6N60S5 SPDX6N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge • Avalanche rated • Extreme di//df rated • 150°C operating temperature Type V^DS b SPUX6N60S5 600 V 4.5 A Pin 1


    OCR Scan     		PDF SPUX6N60S5 SPDX6N60S5 X6N60S5 P-T0251 P-T0252 AG qd transistor SMD transistor ag qs

    transistor marking smd 7c

    Abstract: TRANSISTOR SMD MARKING CODE ag VPT09050 X7N60S5
    Text: SIEMENS SPUX7N60S5 SPDX7N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge VPT09050 VPT09D51 • Avalanche rated • dWdf rated • 150°C operating temperature Type SPUX7N60S5 Vbs 600 V 1 2 3


    OCR Scan     		PDF SPUX7N60S5 SPDX7N60S5 VPT09D51 VPT09050 X7N60S5 P-T0251-3-1 P-T0252 transistor marking smd 7c TRANSISTOR SMD MARKING CODE ag VPT09050 X7N60S5

    20n60s5

    Abstract: transistor 20N60s5 20n60s5 power transistor n60s5
    Text: SIEMENS SPP20N60S5 SPB20N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Worldwide best R 0S 0n in TO 220 • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances


    OCR Scan     		PDF SPP20N60S5 SPB20N60S5 N60S5/SPBx1 N60S5 SPP20N60S5 P-T0220-3-1 P-T0263-3-2 20N60S5 20n60s5 transistor 20N60s5 20n60s5 power transistor n60s5

    Untitled

    Abstract: No abstract text available
    Text: BSP 171P Inf ineon technologies Preliminary Data SIPMOS Small-Signal-Transistor Features Product Summary • P Channel Drain source voltage Vbs -60 V • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current wDS on 0.3


    OCR Scan     		PDF BSP171P P-SOT223-4-1 Q67041-S4019 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T

    DIODE JS.9 smd

    Abstract: No abstract text available
    Text: SIEMENS SPP03N60S5 SPB03N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity


    OCR Scan     		PDF SPP03N60S5 SPB03N60S5 SPPx4N60S5/SPBx4N60S5 P-T0220-3-1 03N60S5 Q67040-S4184 P-T0263-3-2 DIODE JS.9 smd

    SPUX3N60S5

    Abstract: on semiconductor marking code dpack VPT09050
    Text: SIEM EN S SPUX3N60S5 SPDX3N60S5 Target data sheet Cool MOS Power Transistor • Worldwide best ffos 0n> in D-Pack • N-Channel • Enhancement mode VPT09D51 VPT09050 • Ultra low gate charge • Avalanche rated • d v/d t rated 1 2 3 • 150°C operating temperature


    OCR Scan     		PDF SPUX3N60S5 SPDX3N60S5 SPDX3N60S5 VPT09D51 VPT09050 X3N60S5 P-T0251-3-1 P-T0252 on semiconductor marking code dpack VPT09050

    transistor ag qs

    Abstract: transistor smd hq transistor di 960 TRANSISTOR SMD CODE 6.8
    Text: SIEMENS SPPX2N60S5 SPBX2N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge • Avalanche rated • Extreme di//df rated • 150°C operating temperature Type V^DS b SPPX2N60S5 600 V 11.3 A 380 mQ


    OCR Scan     		PDF SPPX2N60S5 SPBX2N60S5 X2N60S5 P-T0220-3-1 P-T0263-3-2 transistor ag qs transistor smd hq transistor di 960 TRANSISTOR SMD CODE 6.8

    VPT09050

    Abstract: VPT09051
    Text: SIEMENS SPUX5N60S5 SPDX5N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge VPT09051 VPT09050 • Avalanche rated • dv/df rated • 150°C operating temperature Type VDS b SPUX5N60S5 600 V 1.9 A


    OCR Scan     		PDF SPUX5N60S5 SPDX5N60S5 VPT09051 VPT09050 X5N60S5 P-T0251-3-1 P-T0252 VPT09050 VPT09051

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SPU07N60S5 SPD07N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • W orldw ide best Ros on in TO-251 and TO -252 • Ultra low gate charge • Periodic avalanche proved • Extrem e d v/d t rated • O ptim ized capacitances


    OCR Scan     		PDF SPU07N60S5 SPD07N60S5 O-251 SPU07N60S5 P-T0251 07N60S5 Q67040-S4196 P-T0252

    FAG 32 diode

    Abstract: No abstract text available
    Text: SIEMENS SPP04N60S5 SPB04N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity


    OCR Scan     		PDF SPP04N60S5 SPB04N60S5 SPPx6N60S5/SPBx6N60S5 P-T0220-3-1 04N60S5 Q67040-S4200 P-T0263-3-2 FAG 32 diode

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SPU04N60S5 SPD04N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity


    OCR Scan     		PDF SPU04N60S5 SPD04N60S5 SPUx6N60S5/SPDx6N60S5 SPU04N60S5 P-T0251 04N60S5 Q67040-S4228 P-T0252

    03N60S5

    Abstract: No abstract text available
    Text: SIEMENS SPU03N60S5 SPD03N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity


    OCR Scan     		PDF SPU03N60S5 SPD03N60S5 SPUx4N60S5/SPDx4N60S5 P-T0251 03N60S5 Q67040-S4227 P-T0252 03N60S5

    TDA 1500

    Abstract: TDA6930X AFC marking carrier recovery external tv tuner Q67007-A5217 tank if SMD MARKING CODE TDA 1195
    Text: SIEMENS Multistandard Video and Sound IF TDA 6930 X Preliminary Data Features • • • • • • • • • Multistandard application for all terrestrial standards FPLL video demodulator Delayed tuner AGC voltage output AFC signal output Quasi parallel sound


    OCR Scan     		PDF Q67007-A5217 P-DSO-28-1 6930X 35x45" GPS05123 TDA 1500 TDA6930X AFC marking carrier recovery external tv tuner Q67007-A5217 tank if SMD MARKING CODE TDA 1195

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS TDA 6900, TDA 6920 TDA 6930 Overview TV Front-End Design with ICs TDA 6900/6920/6930 Three new ICs from Siemens for TV front-ends feature a level of integration that goes well beyond the state of the art. Designers can thus cut costs while increasing


    OCR Scan     		PDF A6930X P-DSO-28-1

    smd transistor A1t

    Abstract: SMD a1T Transistor transistor SMD 33g TRANSISTOR SMD MARKING CODE 3t1 A1t smd transistor TRANSISTOR A1t smd diode A1T A1T TRANSISTOR
    Text: BSP 372 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated •^GS .h = 0.8 .2.0 V Type Vbs b R DS(on) Package BSP 372 100 V 1.7 A 0.31 n SOT-223 Type BSP 372 Ordering Code Q 67000-S300 Marking Tape and Reel Information


    OCR Scan     		PDF OT-223 67000-S300 E6327 S35bQ5 SQT-89 B535bQ5 D13377Ã B235bG5 smd transistor A1t SMD a1T Transistor transistor SMD 33g TRANSISTOR SMD MARKING CODE 3t1 A1t smd transistor TRANSISTOR A1t smd diode A1T A1T TRANSISTOR