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    DFL 22 Search Results

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    DFL 22 Price and Stock

    Vishay Sfernice PE30LDFL222MAB

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    DigiKey PE30LDFL222MAB Box 20
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    Vishay Sfernice PE30LDFL220MAB

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    DigiKey PE30LDFL220MAB Box 20
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    Amphenol Corporation DFL22AK450004XX4XX

    Conn Coupler Single Mode Simplex Cable Mount 0.9mm - Bulk (Alt: DFL22AK450004XX4XX)
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    Avnet Americas DFL22AK450004XX4XX Bulk 5
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    Vishay Intertechnologies PE30LDFL222MAB

    Rotary Potentiometer, Cermet, 2.2 kOhm, 1Turn, Linear, 3 W, ± 20% - Bulk (Alt: PE30LDFL222MAB)
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    Avnet Americas PE30LDFL222MAB Bulk 12 Weeks 20
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    Newark PE30LDFL222MAB Bulk 20
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    Vishay Intertechnologies PE30LDFL220MAB

    Rotary Potentiometer, Cermet, 22 Ohm, 1Turn, Linear, 3 W, ± 20% - Bulk (Alt: PE30LDFL220MAB)
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    Avnet Americas PE30LDFL220MAB Bulk 12 Weeks 20
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    • 100 $21.2268
    • 1000 $18.24128
    • 10000 $17.81375
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    Newark PE30LDFL220MAB Bulk 20
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    Avnet Abacus PE30LDFL220MAB 14 Weeks 20
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    DFL 22 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TN53

    Abstract: pcb warpage after reflow joint Thermo couple Soldering guidelines pin in paste
    Text: Technical Note 53 Assembly Instructions for Dual Flat Lead Package DFL TABLE OF CONTENTS Table of 1 Objective .2


    Original     		PDF J-STD-020C) TN53 pcb warpage after reflow joint Thermo couple Soldering guidelines pin in paste

    UL1061 16 AWG

    Abstract: Llt 543 CONNECTRON lrct DFL 22
    Text: NC DFll Series 2mm Pitch K\ ton Colltlccto DFI 1 SERIES W Features 1, Saves space on board ‘I‘\\ 0 I-O\b \ 01‘ 2 IIIIII\i ide Dollhtc\ cc~~iip;~rcd ttlC cjit:intiI~ 01 tcrtiiiriat~ arc auxn~?ccl conltxlctl\ in ;I 7 111111 \\ idtti. ~i~~tt4 II itti the con~cntion~lt


    Original     		PDF 29OklO 256-t 290-t UL1061 16 AWG Llt 543 CONNECTRON lrct DFL 22

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC55257 DPL / DFL / DFTL / DTRL - 55L TC55257 DPL / DFL / DFTL / DTRL - 70L TC55257 DPL / DFL / DFTL / DTRL - 85L DATA SILICON GATE CMOS 32,768-WORD BY 8-BIT STATIC RAM TENTATIVE DATA


    OCR Scan     		PDF TC55257 768-WORD TC55257DPL/DFL/DFTL/DTRL 144-bit TC55257DPL-Lâ

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC 55257 DPL / DFL / DFTL / DTRL - 55V TC55257 DPL / DFL / DFTL / DTRL - 70V TC55257 DPL / DFL / DFTL / DTRL - 8 5 V DATA SILICON GATE CMOS 32,768-WORD BY 8-BIT STATIC RAM TENTATIVE DATA


    OCR Scan     		PDF TC55257 768-WORD TC55257DPL/DFL/DFTL/DTRL 144-bit TSOP28-P) TC55257DPL-Vâ

    tc55257

    Abstract: TCS5257
    Text: INTEGRATED TOSHIBA T O SH IB A M O S DIG ITA L IN T EG RA TED CIRCUIT TC55257 DPL / DFL / DFTL / DTRL - 55L TC55257 DPL / DFL / DFTL / DTRL - 70L TC55257 DPL / DFL / DFTL / DTRL - 85L SILICON GATE C M O S CIRCUIT TECHNICAL DATA 32,768-WORD BY 8-BIT STATIC RAM


    OCR Scan     		PDF TC55257 768-WORD TC55257DPL/DFL/DFTL/DTRL 144-bit TC5S257DPL-L-- TCS5257

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55257DPL/DFL/DFTL/DTRL-55V,-70V,-85V TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32,768-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55257DPL/DFL/DFTL/DTRL is a 262,144-bit static random access memory SRAM organized as 32,768 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates


    OCR Scan     		PDF TC55257DPL/DFL/DFTL/DTRL-55V TC55257DPL/DFL/DFTL/DTRL 144-bit OP28-P-450-1 28-P-0

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55257DPL/DFL/DFTL/DTRL-55V,-70V,-85V TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32,768-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55257DPL/DFL/DFTL/DTRL is a 262,144-bit static random access memory SRAM organized as 32,768 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates


    OCR Scan     		PDF TC55257DPL/DFL/DFTL/DTRL-55V 768-WORD TC55257DPL/DFL/DFTL/DTRL 144-bit DIP28-P-600-2 OP28-P-450-1 995TYP 28-P-0

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55257DPL/DFL/DFTL/DTRL-55L,-70L,-85L TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32,768-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55257DPL/DFL/DFTL/DTRL is a 262,144-bit static random access memory SRAM organized as 32,768 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates


    OCR Scan     		PDF TC55257DPL/DFL/DFTL/DTRL-55L 768-WORD TC55257DPL/DFL/DFTL/DTRL 144-bit DIP28-P-600-2 OP28-P-450-1 28-P-0

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A TC55257DPL/DFL/DFTL/DTRL-55L,-70L,-85L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 32,768-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55257DPL/DFL/DFTL/DTRL is a 262,144-bit static random access memory SRAM organized as 32,768 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates


    OCR Scan     		PDF TC55257DPL/DFL/DFTL/DTRL-55L TC55257DPL/DFL/DFTL/DTRL 144-bit OP28-P-450-1 995TYP 28-P-0

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TC55257DPL/DFL/DFTL/DTRL-55V,-70V,-85V TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32,768-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55257DPL/DFL/DFTL/DTRL is a 262,144-bit static random access memory SRAM organized as 32,768 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates


    OCR Scan     		PDF TC55257DPL/DFL/DFTL/DTRL-55V TC55257DPL/DFL/DFTL/DTRL 144-bit DIP28-P-600-2 OP28-P-450-1 28-P-0

    TC55257DPL

    Abstract: No abstract text available
    Text: TO SHIBA TC55257DPL/DFL/DFTL/DTRL-55L,-70L,-85L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32,768-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55257DPL/DFL/DFTL/DTRL is a 262,144-bit static random access memory SRAM organized as 32,768 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates


    OCR Scan     		PDF TC55257DPL/DFL/DFTL/DTRL-55L 768-WORD TC55257DPL/DFL/DFTL/DTRL 144-bit Ta250a 28-P-0 3E3-30- TC55257DPL

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TC55257DPL/DFL/DFTL/DTRL-55L,-70L,-85L TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32,768-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55257DPL/DFL/DFTL/DTRL is a 262,144-bit static random access memory SRAM organized as 32,768 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates


    OCR Scan     		PDF TC55257DPL/DFL/DFTL/DTRL-55L TC55257DPL/DFL/DFTL/DTRL 144-bit DIP28-P-600-2 OP28-P-450-1 28-P-0 TC55257DPL/DFL/DFTL/DTRL-55Lt-70L

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TC55257DPL/DFL/DFTL/DTRL-55V,-70V,-85V TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32,768-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55257DPL/DFL/DFTL/DTRL is a 262,144-bit static random access memory SRAM organized as 32,768 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates


    OCR Scan     		PDF TC55257DPL/DFL/DFTL/DTRL-55V 768-WORD TC55257DPL/DFL/DFTL/DTRL 144-bit 28-P-0 3E3-30-

    5257 static ram

    Abstract: No abstract text available
    Text: T O S H IB A TC55257DPL/DFL/DFTL/DTRL-55L,-70L,-85L T O S H IB A M O S D IG ITAL IN TEG RATED CIRCUIT SILICON GATE C M O S 32,768-W ORD B Y 8-BIT STATIC R A M D ESC R IPT IO N The TC55257DPL/DFL/DFTL/DTRL is a 262,144-bit static random access m emory SRAM organized as


    OCR Scan     		PDF 768-WORD TC55257DPL/DFL/DFTL/DTRL 144-bit OP28-P-45Q-1 PT27l 28-P-0 5257 static ram

    300pF

    Abstract: NPN triple diffused 60V 2N4070 2N4071 JAN2N4150 JAN2N5237 JAN2N5238 SDT7601 SDT7618 SDT7A05
    Text: ^olîtran Devices. Inc Ä ¥ M ,© MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* (FORMERLY 85 CHIP NUMBER dfl CONTACT METALLIZATION Base and emitter: > 30,000 Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)


    OCR Scan     		PDF 203mm) 300pF NPN triple diffused 60V 2N4070 2N4071 JAN2N4150 JAN2N5237 JAN2N5238 SDT7601 SDT7618 SDT7A05

    DTRU

    Abstract: TSOP128-P-0
    Text: 700-93 9/^ -h~70o-<}6<f TOSHIBA + %\8 7 0 iS- *- 3 2.7 H -H S TC55257DPL/DFL/DFTL/PTRL-55L.-70L,’85L TO SH IBA MOS DIGITAL IN TEGRATED CIRCUIT SILICON G A TÊ CM OS 32,768-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55257DPI/DFIVDFTL/DTRL 1$ a 262,144-bit static random access memory (SRAM) organized as


    OCR Scan     		PDF TC55257DPL/DFl7DFTL/PTRL-55Lt-70Lr85L 768-WORD TC55257DPIVDFI/DFTL/DTRL 144-bit aL/DFL/DFTL/DTRL-55LI-70LI-85L DIP28-P-600-2 TC55257DPi7PFL/DFTL/DTRL-55Lf-70Lr85L OP28-P-45 99styp TC55257DPI7DFL/DFTUPTRL-55L-70L-85L DTRU TSOP128-P-0

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUIT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC55257DPL/ DFL/ DFTL - 55L, -70L, -8 5 L i T O S H IB A TECHNICAL D A TA SILICON GATE CMOS 32,768 WORDS X 8 BIT STATIC RAM TEN TATIVE D A TA DESCRIPTION The TC55257DPL is 262,144 bit static random access memory organized as 32,768 words by 8 bits


    OCR Scan     		PDF TC55257DPL/ TC55257DPL OP28-P-450 TSOP28

    Untitled

    Abstract: No abstract text available
    Text: • 00207=50 MflT ■ TC55257DPL/DFL/DFIL-55L/70L/85L PRELIMINARY . Standard TOSHIBA SILICON GATE CMOS 32,768 WORD x 8 BIT STATIC RAM Description The TC5525TDPL is a 262,144 bit static random access memory organized as 32,768 words by 8 bits using CMOS technology, and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low


    OCR Scan     		PDF TC55257DPL/DFL/DFIL-55L/70L/85L TC5525TDPL TC55257DPL

    Untitled

    Abstract: No abstract text available
    Text: »fl Y U H Dfl I * HY51V18164C,HY51V16164C 1U xie, Extended Data O ut mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    OCR Scan     		PDF HY51V18164C HY51V16164C 16-bit 18-bit A0-A11) DQ0-DQ15)

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA < ' cc TC55257DPL/DFL/DFIL-55V/70V/85V PRELIMINARY SILICON GATE CMOS 1 32,768 WORD x 8 BIT STATIC RAM Description The TC55257DPL is a 262,144 bit static random access memory organized as 32,768 words by 8 bits using CMOS tech­ nology, and operated from a single 2.7 ~ 5.5V power supply. Advanced circuit techniques provide both high speed and low


    OCR Scan     		PDF TC55257DPL/DFL/DFIL-55V/70V/85V TC55257DPL SR25040995 TC55257DPL/DFL/DFTL-55V/70V/85V DIP28-P-600 OP28-P-450

    17151

    Abstract: No abstract text available
    Text: 7 T H IS JÊ L DRAWING IS C O P Y R IG H T 19 U N P U B L IS H E D . R ELE A S E D BY AMP FOR ALL IN C O R PO R A TE D . P U B L IC A T IO N R IG H T S B 6 3 4 n 2 ïïTst LOG , 19 RESERVED . AD REVISIONS 4 7 D E S C R IP T IO N M + 0 . 03 7 - . 0 PER ECN


    OCR Scan     		PDF 09/DEC/96 PRE55 12-DEC-00 u7435 scott2000/schnum/ecn0170 17151

    Untitled

    Abstract: No abstract text available
    Text: 7 T H IS DRAWING I S UNPUBLISHED. JÊL RELEASED FOR PUBLICATION COPYRIGHT 19 BY AMP INCORPORATED. 6 4 5 3 n 2 DI ST LOG , 19 ALL RIGHTS RESERVED. REVI SI ONS 47 AD DESCRIPTION H HOUSING M ATERIAL COLOR: NATURAL. LIGUID CONTACT PHOSPHOR NATERIAL: CRYSTAL REVISE


    OCR Scan     		PDF 0U1B-0170-00 16JUL97 14-DEC-00 u7435 scott2000/schrum /ecn0170 16JUL97

    Untitled

    Abstract: No abstract text available
    Text: n 7 T H IS JÊL DRAWING IS COPYRIGHT 19 UNPUBLISHED. RELEASED FOR P U B L I C A T IO N BY AMP INCORPORATED. 6 4 5 2 3 LOG , 19 ALL RIGHTS RESERVED. DI ST REVISIONS 47 AD DE SC RI PT IO N H HOUSING M A T E R I A L COLOR: NATORAL. LIQUID CONTACT P H OS P H OR


    OCR Scan     		PDF 0U1B-0170-00 16JUL97

    DFL 22

    Abstract: No abstract text available
    Text: n 7 T H IS JÊL DRAWING IS C O P Y R IG H T 19 U N P U B L IS H E D . R ELE A S E D BY AMP ALL IN C O R PO R A TE D . FOR P U B L IC A T IO N R IG H T S 4 B 6 3 2 ïïTst LOG , 19 RESERVED . R E V IS IO N S 47 AD D E S C R IP T IO N F + 0 . 03 •ROW D ian nan nan nan nan nan ngn nan nan nari u p nan*


    OCR Scan     		PDF 03MAY00 03-MAY-00 u7435 scott2000/schrum/ec011 DFL 22