DFM8 Search Results

2 bit magnitude comparator

Abstract: dece2x4 TA194 TA688 4 bit identity comparator AO11 TA164 2-bit down counter TA161 DLM8
Contextual Info: Accelerator Series Macro Library – Tables of Hard, Soft, and TTL Macros Hard Macros—Combinatorial Modules Function Macro Description Combinatorial Logic Module CM8 Combinational Module Full ACT 3 Logic Module Sequential Logic Module DFM8A 4-bit D-Type Flip-Flop with Multiplexed Data, active low Clear, and active

u6 ek

Abstract: b555c MMI3
Contextual Info: =;E01 EB?>9 EF7F: D:?7J ;OLZ[XOY _ x@<C<:KI@: JKI<E>K? miii3 _ -?FKF @JFC8K@FE z@C< +Fs yjlmnjp _ 7<IF :IFJJ FI I8E;FD KLIEfFE _ /<DFM89C< =@E><I GIFF= :FM<I 8M8@C89C< z@C< +Fgs /nijoolkq _ xFL9C< 0w/ uw FLKGLK _ -8E<C DFLEK _ xw FI uw :FEKIFC _ yEM@IFED<EK8C =I@<E;CP GIF;L:K

Fast Recovery Diode Module 1800v

Abstract: DFM800NXM33-A000 UC 3845
Contextual Info: DFM800NXM33-A000 DFM800NXM33-A000 Fast Recovery Diode Module Preliminary Information DS5473-1.3 October 2001 FEATURES • Low Reverse Recovery Charge ■ High Switching Speed ■ Low Forward Voltage Drop KEY PARAMETERS VRRM VF typ (max) IF (max) IFM 3300V

UC 3845

Abstract: Fast Recovery Diode Module 1800v DFM800NXM33-A000
Contextual Info: DFM800NXM33-A000 DFM800NXM33-A000 Fast Recovery Diode Module DS5473-1.3 October 2001 FEATURES • Low Reverse Recovery Charge ■ High Switching Speed ■ Low Forward Voltage Drop KEY PARAMETERS VRRM VF typ (max) IF (max) IFM 3300V 2.5V 800A 1600A ■ Isolated Base

DFM800NXM33-A000

Abstract: UC 3845
Contextual Info: DFM800NXM33-A000 DFM800NXM33-A000 Fast Recovery Diode Module DS5473-1.3 October 2001 FEATURES • Low Reverse Recovery Charge ■ High Switching Speed ■ Low Forward Voltage Drop KEY PARAMETERS VRRM VF typ (max) IF (max) IFM 3300V 2.5V 800A 1600A ■ Isolated Base

Contextual Info: DFM800XXM45-TS000 Fast Recovery Diode Module DS6101-1 May 2013 LN30483 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates  Dual Diodes Can Be Paralleled For 1600A Rating

DFM800NXM33-A000

Contextual Info: DFM800NXM33-A000 DFM800NXM33-A000 Fast Recovery Diode Module Preliminary Information DS5473-1.3 October 2001 FEATURES • Low Reverse Recovery Charge ■ High Switching Speed ■ Low Forward Voltage Drop KEY PARAMETERS VRRM VF typ (max) IF (max) IFM 3300V

3N211

Contextual Info: MOTOROLA Î SC 34 -CDIODES/OPTOJ 6 3 6 7 2 5 5 MOTOROLA SC • . . »FJt.Bt.7E5S QG3ADM3 1 34C CDIODES/OPTO 38043 r- h TT -•*' ~ t S’ FIELD-EFFECT TRANSISTORS DICE continued) 3C211 DIE NO. LINE SOURCE — DFM881 This die provides performance equal to or better than that of

mpf131

Abstract: MFE131 3N201 3N210 3n207 MPF132 3N201 APPLICATIONS 3N209 3N208 3N204
Contextual Info: 34 MOTOROLA SC -CDIODES/OPTO} ! 6367255 MOTOROLA SC DE |t.3b7S55 0030045 CD I O D E S / O P T O 3 ^c 3 8 0 42 d T - ?/*• ?. F IE L D -E F F E C T TR A N SISTO R S D ICE continued) DIE NO. 3C201 LINE SOURCE — DFM877 This die provides performance equal to or better than that of

Contextual Info: DFM800NXM33-A000 Fast Recovery Diode Module Replaces DS5473-1.3 DS5473-2 December 2010 LN27861 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates

DFM800XXM45-TS000

Contextual Info: DFM800XXM45-TS000 Fast Recovery Diode Module DS6101-1 May 2013 LN30483 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates  Dual Diodes Can Be Paralleled For 1600A Rating

DFM800XXM45-TS001

Contextual Info: DFM800XXM45-TS001 Fast Recovery Diode Module Replaces DS6096-1 DS6096-2 October 2013 LN31066 FEATURES KEY PARAMETERS • VRRM VF IF IFM 10.2kV Isolation Package  Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates

Contextual Info: DFM800NXM33-F000 Fast Recovery Diode Module Replaces DS5911-1.0 DS5911-2 December 2010 LN27787 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates

Contextual Info: DFM800XXM45-TS001 Fast Recovery Diode Module DS6096-1 April 2013 LN30427 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates  Dual Diodes Can Be Paralleled For 1600A Rating

DFM800NXM33-F000

Contextual Info: DFM800NXM33-F000 Fast Recovery Diode Module DS5911-1.0 March 2007 LN25213 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 1600A Rating

nh fuse

Abstract: DFM800NXM33-A000 UC 3845
Contextual Info: DFM800NXM33-A000 DFM800NXM33-A000 Fast Recovery Diode Module Preliminary Information DS5473-1.3 October 2001 FEATURES • Low Reverse Recovery Charge ■ High Switching Speed ■ Low Forward Voltage Drop KEY PARAMETERS VRRM VF typ (max) IF (max) IFM 3300V

Contextual Info: DFM800XXM45-TS001 Fast Recovery Diode Module DS6096-1 April 2013 LN30427 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates  Dual Diodes Can Be Paralleled For 1600A Rating

DFM800NXM33-A000

Contextual Info: DFM800NXM33-A000 Fast Recovery Diode Module Replaces DS5473-1.3 DS5473-2 December 2010 LN27861 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates

Actel A1425

Abstract: DLM8 pin diagram for all 74 series ttl gates A1425 A1425A-3 A1460A-3 177-Pin
Contextual Info: N EW! –3 S peeds ACT 3 Field Programmable Gate Arrays Features • Highly Predictable Performance with 100% Automatic Placement and Routing • 7.5 ns Clock-to-Output Times • Up to 250 MHz On-Chip Performance • Up to 228 User-Programmable I/O Pins

A1425A-3

Contextual Info: ACT3PCI.fm v6 Page 1 Tuesday, August 12, 1997 11:17 AM Accelerator Series FPGAs: ACT 3 PCI-Compliant Family F e atures • Up to 10,000 Gate Array Equivalent Gates. • Up to 250 MHz On-Chip Performance. • 9.0 ns Clock-to-Output. • Up to 1,153 Dedicated Flip-Flops.

SiS 486 schematic

Contextual Info: Accelerator Series FPGAs - ACT 3 Family Features • Replaces up to twenty 32 macro-cell CPLDs • Up to 10,000 Gate Array Equivalent Gates up to 25,000 equivalent P L IJ Gates • Replaces up to one hundred 20-pin PAL Packages • Highly Predictable Performance with 100% Automatic

Tag 225-600

Abstract: IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half

54SXA

Contextual Info: Macro Library Guide July 2000 For more information about Actel’s products, call 888-99-ACTEL or visit our Web site at http://www.actel.com Actel Corporation • 955 East Arques Avenue • Sunnyvale, CA USA 94086 U.S. Toll Free Line: 888-99-ACTEL • Customer Service: 408-739-1010 • Customer Service FAX: 408-522-8044

kpb 307

Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Bi-directional switches, choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half